Infineon Technologies IDH20G65C6XKSA1

Overview

IDH20G65C6XKSA1 from Infineon is a 650 V, 20 A silicon carbide Schottky diode in PG-TO220-2 package, designed for high-frequency PFC and solar inverter applications. It delivers VF = 1.25 V at 20 A/25 °C, Qc = 26.8 nC at 400 V, dv/dt ruggedness of 150 V/ns, and RthJC = 0.8 K/W, enabling high-efficiency, compact power conversion stages.

For engineers reviewing the IDH20G65C6XKSA1 datasheet, IDH20G65C6XKSA1 pinout, IDH20G65C6XKSA1 application, or IDH20G65C6XKSA1 equivalent, key selection criteria include forward voltage consistency across temperature, capacitive charge at operating VR, thermal resistance under forced convection, and compatibility with CoolMOS™ 7-based half-bridge topologies.

Technical Context

This SiC Schottky diode uses Infineon's 6th-generation CoolSiC™ process with a novel Schottky metal system to reduce Qc × VF - the primary figure of merit for high-frequency rectification. Its zero reverse recovery charge eliminates switching losses in hard-commutated circuits and enables operation up to 500 kHz without snubbers.

The device is rated for continuous IF = 20 A at TC ≤ 135 °C (D = 1), supports surge currents up to 99 A (10 ms sine half-wave), and maintains IR ≤ 153 µA at VR = 420 V and Tj = 150 °C - critical for industrial UPS and grid-tied inverters requiring long-term reliability at elevated junction temperatures.

Key Specifications

Pinout & Package

Package: PG-TO220-2 - Through-hole, isolated case, single-die SiC Schottky diode with copper tab for direct thermal mounting. Case is electrically connected to cathode.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D20065A and STPSC2006D, IDH20G65C6XKSA1 offers the lowest VF and best Qc × VF trade-off, enabling higher power density in thermally constrained PFC and solar applications - especially where junction temperature exceeds 150 °C or switching frequency exceeds 250 kHz.

Availability

IDH20G65C6XKSA1 is available at Aetrix Electronics and suitable for power factor correction, solar inverters, uninterruptible power supplies, and industrial motor drive front-ends requiring stable component supply and long-term industrial qualification.

Supply support for IDH20G65C6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

IDH20G65C6XKSA1 belongs to the CoolSiC™ 6th Generation Schottky diode product line, engineered specifically to replace silicon diodes in high-efficiency, high-frequency AC-DC and DC-DC conversion systems demanding ultra-low loss and rugged transient performance.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies IF = 20 A at TC ≤ 135 °C with duty cycle D = 1. Operation above this requires derating: at TC = 150 °C, max IF drops to 16.5 A; at TC = 175 °C, it falls to 11.2 A. Thermal design must ensure RthJC + RthCS + RthSA ≤ 0.8 K/W to sustain full current at 135 °C case.

Is IDH20G65C6XKSA1 compatible with lead-free reflow soldering?

No - IDH20G65C6XKSA1 uses PG-TO220-2 package with leads intended for wave soldering only. The datasheet explicitly permits soldering only at leads (1.6 mm from case) at 260 °C for 10 s. Reflow exposes the plastic body to excessive thermal stress and violates JEDEC J-STD-020 moisture sensitivity limits.

How does its dv/dt ruggedness impact gate driver design in half-bridge configurations?

With 150 V/ns rating, IDH20G65C6XKSA1 prevents false turn-on of high-side IGBTs/MOSFETs during diode commutation. This allows reduction or elimination of negative gate voltage (–5 V) and gate resistor tuning, simplifying driver IC selection and lowering gate drive power by up to 30% in 100 kHz+ topologies.

Does the device require a soft-start circuit to limit inrush current?

No - unlike bipolar devices, this SiC Schottky diode has no minority carrier storage and exhibits no inrush current surge. Its forward characteristic is purely resistive at turn-on, so standard NTC thermistors or active soft-start circuits used for Si diodes are unnecessary and may degrade system response time.