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Infineon Technologies IDK02G120C5XTMA1
- Part No.:
- IDK02G120C5XTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IDK02G120C5XTMA1.pdf
- Description:
- DIODE SIC 1.2KV 11.8A TO263-1
- Quantity:
- Payment:
- Shipping:
Inventory:688
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Product details
Overview
IDK02G120C5XTMA1 from Infineon is a 5th Generation CoolSiC™ 1200 V, 2 A silicon carbide Schottky diode in PG-TO263-2 package, featuring zero reverse recovery charge, 14 nC total capacitive charge at 800 V/150°C, and 175°C maximum junction temperature. It serves as a high-efficiency freewheeling or boost diode in high-voltage DC/DC converters and solar inverters.
For engineers reviewing the IDK02G120C5XTMA1 datasheet, IDK02G120C5XTMA1 pinout, IDK02G120C5XTMA1 application, or IDK02G120C5XTMA1 equivalent, key selection criteria include its 1200 V repetitive peak reverse voltage, temperature-independent switching behavior, tight VF distribution (1.4–1.65 V @ 2 A), dv/dt ruggedness of 150 V/ns, and robust surge capability (37 A non-repetitive IF,SM @ 25°C).
Technical Context
This SiC Schottky diode replaces silicon fast recovery diodes in high-frequency, high-efficiency power stages. Its unipolar conduction eliminates minority-carrier storage, enabling zero Qrr and minimal switching losses across operating temperatures from –55°C to 175°C.
The device uses a planar junction structure with optimized field termination and metallization for stable 1200 V blocking. Its low Rth(j-c) of 1.5–2 K/W supports high-power-density thermal design, while the 14 nC QC enables reduced EMI and gate driver stress in hard-switched topologies like three-level NPC inverters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1200 V - Enables use in 1000 V DC bus systems with 20% margin for transient overvoltage. |
| IF (continuous) | 2.0 A @ TC = 168°C - Specifies rated current under worst-case case-temperature conditions with max duty cycle. |
| VF @ 2A/25°C | 1.4–1.65 V - Low forward drop reduces conduction loss and improves system efficiency at light-to-mid loads. |
| QC | 14 nC @ VR = 800 V, Tvj = 150°C - Quantifies capacitive switching charge affecting turn-on loss and EMI in high-dv/dt circuits. |
| Rth(j-c) | 1.5–2 K/W - Defines thermal path resistance from junction to case, critical for heatsink sizing in compact designs. |
| dv/dt ruggedness | 150 V/ns - Ensures reliable operation without spurious turn-on during fast voltage transients in bridge-leg configurations. |
| Tvj,max | 175°C - Allows sustained operation at elevated junction temperatures, supporting derating flexibility in sealed enclosures. |
Pinout & Package
Package: PG-TO263-2 (D0212C5), surface-mount, isolated heatsink pad on backside (cathode-connected). Cathode is pin 1 and backside metal; anode is pin 2.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 + Backside | Cathode | Primary current return path; electrically connected to heatsink for low-inductance thermal and electrical grounding. |
| Pin 2 | Anode | Input terminal for forward conduction; routed to high-side switch node in boost or buck-boost topologies. |
Key Features
| Feature | Design Value |
|---|---|
| No reverse recovery current (Qrr = 0) | Eliminates switching tail current and associated losses, enabling >100 kHz operation without snubbers. |
| Tight VF distribution | ±5% typical spread at 2 A ensures predictable conduction loss matching in parallel configurations. |
| Temperature-independent switching | VF and QC remain stable from –55°C to 175°C, simplifying thermal compensation in wide-temperature-range systems. |
| Specified dv/dt ruggedness | 150 V/ns rating validated per JEDEC standards, allowing direct replacement in Si diode layouts without gate shielding redesign. |
| Extended surge capability | 37 A non-repetitive IF,SM @ 25°C supports motor-start and grid-fault transients in industrial UPS and solar inverters. |
Applications
| Solar String Inverter Boost Stage | Industrial UPS Output Rectification |
|---|---|
Use Scenario: High-frequency boost converter operating at 50–100 kHz with 800–1000 V DC link voltage. IC Role / Device Role / Timing Role: Freewheeling diode in interleaved boost stage, conducting during high-side MOSFET off-time. Use Value: Zero Qrr reduces switching loss by >60% vs. Si FRD, enabling smaller heatsink and higher power density. | Use Scenario: Three-phase output rectifier in double-conversion UPS handling 400 V AC input and 750 V DC bus. IC Role / Device Role / Timing Role: Output freewheeling diode in IGBT-based inverter leg, clamping inductive flyback energy. Use Value: 150 V/ns dv/dt ruggedness prevents false triggering during fast IGBT commutation edges. |
| EV Onboard Charger PFC Stage | High-Voltage DC/DC Converter |
Use Scenario: 3.3 kW totem-pole PFC front-end with 900 V DC output and 100 kHz switching frequency. IC Role / Device Role / Timing Role: High-side synchronous rectifier diode replacing body diode of GaN HEMT in continuous conduction mode. Use Value: 14 nC QC minimizes gate driver loading and reduces turn-on overshoot in high-dv/dt PFC transitions. | Use Scenario: Isolated bidirectional DC/DC stage in energy storage systems with 1200 V battery string and 400 V LV side. IC Role / Device Role / Timing Role: Clamp diode in active clamp forward or resonant LLC secondary rectification. Use Value: 175°C max junction temperature allows operation in confined, passively cooled enclosures without forced air. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D02065E (Wolfspeed) | 650 V rating, 2 A, TO-220AC package, Rth(j-c) = 2.5 K/W | Limited to ≤700 V DC bus; requires larger heatsink due to higher thermal resistance | Select only for lower-voltage, cost-sensitive designs where 1200 V margin is unnecessary. |
| STPSC2H12D (STMicroelectronics) | 1200 V, 2 A, TO-220AC package, VF = 1.7 V @ 2 A/25°C, QC = 16 nC | Higher VF and QC increase conduction and switching losses in high-frequency PFC stages | Preferable only when TO-220 mechanical fit is mandatory and thermal margin permits higher VF penalty. |
Compared with C3D02065E and STPSC2H12D, IDK02G120C5XTMA1 delivers superior voltage rating headroom, lower thermal resistance, and tighter VF consistency-making it optimal for space-constrained, high-efficiency 1200 V systems requiring long-term reliability under surge and thermal stress.
Availability
IDK02G120C5XTMA1 is available at Aetrix Electronics and suitable for solar string inverters, industrial UPS systems, and high-voltage DC/DC converters requiring stable component supply, consistent parametric performance, and long-lifecycle availability.
Supply support for IDK02G120C5XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
IDK02G120C5XTMA1 belongs to the CoolSiC™ 5th Generation family, engineered specifically for high-efficiency, high-reliability power conversion in solar, UPS, and EV charging applications demanding 1200 V blocking and ultra-low switching loss.
FAQ
Is IDK02G120C5XTMA1 RoHS compliant and lead-free?
Yes. IDK02G120C5XTMA1 features Pb-free lead plating and complies fully with RoHS Directive 2011/65/EU. The device meets JEDEC J-STD-020 MSL1 reflow requirements with a peak soldering temperature of 260°C, ensuring compatibility with standard lead-free assembly processes.
What is the maximum allowable case temperature for continuous operation?
The datasheet specifies continuous forward current IF = 2.0 A at TC = 168°C with D = 1 (100% duty cycle). Operation above this case temperature exceeds rated thermal limits and risks accelerated degradation. For reliable long-term use, maintain TC ≤ 168°C under full load, verified via thermal simulation or thermocouple measurement at the package center tab.
Can IDK02G120C5XTMA1 be paralleled with identical units?
Yes, but with design precautions. Tight VF distribution (±5% typ.) supports current sharing; however, layout symmetry, matched trace inductance, and thermal coupling must be ensured. Derate total current by ≥15% versus sum of individual ratings, and verify sharing under worst-case thermal gradients using IR imaging during full-load testing.
Does this diode require a gate resistor or snubber network?
No. As a Schottky diode with no minority carriers, IDK02G120C5XTMA1 has no gate and exhibits no reverse recovery. Snubbers are unnecessary for Qrr-related ringing. However, a small RC snubber (e.g., 100 Ω + 100 pF) may still be used across anode–cathode to damp high-frequency parasitic oscillations caused by PCB layout inductance and stray capacitance.
IDK02G120C5XTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™+
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 1200 V
- Current - Average Rectified (Io):
- 11.8A
- Voltage - Forward (Vf) (Max) @ If:
- 1.65 V @ 2 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 18 µA @ 1200 V
- Capacitance @ Vr, F:
- 182pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-2-1
- Operating Temperature - Junction:
- -55°C ~ 175°C
IDK02G120C5XTMA1 FAQ
1.How can I place an order for IDK02G120C5XTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDK02G120C5XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDK02G120C5XTMA1 reliable?
The price and inventory of IDK02G120C5XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDK02G120C5XTMA1 is usually 5 days.
3.What payment methods are accepted for IDK02G120C5XTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDK02G120C5XTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDK02G120C5XTMA1?
IDK02G120C5XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDK02G120C5XTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDK02G120C5XTMA1?
For technical support, including IDK02G120C5XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDK02G120C5XTMA1 requirements.
6.How does Aetrix verify that IDK02G120C5XTMA1 is sourced from the original manufacturer or authorized distributors?
All IDK02G120C5XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDK02G120C5XTMA1 meets industry standards.
7.What is the process for return or replacement of IDK02G120C5XTMA1?
All IDK02G120C5XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDK02G120C5XTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDK02G120C5XTMA1 part is unused and in its original packaging.
Return procedure for IDK02G120C5XTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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