Infineon Technologies IDK02G65C5XTMA1

Overview

IDK02G65C5XTMA1 from Infineon is a 650 V, 2 A silicon carbide Schottky diode in PG-TO263-2 package, featuring zero reverse recovery charge, 4 nC capacitive charge at 400 V, 1.5–1.8 V forward voltage at 2 A/25°C, and rated for continuous operation up to 155°C junction temperature. It serves as a high-efficiency freewheeling or output rectifier in high-frequency SMPS and PFC stages.

For engineers reviewing the IDK02G65C5XTMA1 datasheet, IDK02G65C5XTMA1 pinout, IDK02G65C5XTMA1 application, or IDK02G65C5XTMA1 equivalent, key selection criteria include its SiC-specific thermal stability, absence of reverse recovery loss, low Qc × Vf figure of merit, and compatibility with 650 V CoolMOS™ half-bridge topologies.

Technical Context

This 5th-generation thinQ!™ SiC Schottky diode uses Infineon's diffusion-soldered thin-wafer process to achieve reduced RthJC (2.6–4.2 K/W) and improved thermal performance over prior generations. Its unipolar conduction eliminates minority-carrier storage, enabling operation up to 175°C with stable VF and IR across temperature.

The device exhibits temperature-independent switching behavior and dv/dt ruggedness of 100 V/ns under 0–480 V reverse bias. Its 650 V VRRM rating is validated per JEDEC standards with breakdown testing at 4.5 mA, and surge capability supports 23 A non-repetitive forward current (10 ms, TC = 25°C).

Key Specifications

Pinout & Package

Package: PG-TO263-2 (D²PAK), surface-mount, single-diode configuration with isolated cathode tab and anode lead.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D02065E and STPSC2H065, IDK02G65C5XTMA1 delivers the lowest Qc × Vf product (6.8–7.2 nC·V), best thermal resistance (2.6 K/W min), and highest surge rating - making it optimal for high-density, high-reliability 650 V converter designs where thermal and switching loss budgets are tight.

Availability

IDK02G65C5XTMA1 is available at Aetrix Electronics and suitable for switch mode power supplies, solar inverters, and uninterruptible power supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for IDK02G65C5XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDK02G65C5XTMA1 belongs to Infineon's thinQ!™ 5th-generation SiC Schottky diode product line, engineered specifically to pair with 650 V CoolMOS™ CFD7 transistors in high-efficiency, high-power-density AC-DC and DC-DC conversion systems.

FAQ

Is IDK02G65C5XTMA1 RoHS compliant and halogen-free?

Yes. IDK02G65C5XTMA1 features Pb-free lead plating and complies with RoHS Directive 2011/65/EU. The device is also halogen-free per IEC 61249-2-21, with chlorine and bromine content below 900 ppm each, confirmed in Infineon's material declaration report 2017-08-11 Rev. 2.1.

What is the maximum allowable case temperature for continuous 2 A operation?

The datasheet specifies IF = 2 A is rated for TC < 155°C. At TC = 155°C, junction temperature reaches 175°C (Tj = TC + Ptot × RthJC). With Ptot ≈ 3.6 W at 2 A/1.8 V and RthJC = 2.6 K/W, Tj = 155 + 9.4 ≈ 164.4°C - safely within the 175°C absolute max limit.

Can IDK02G65C5XTMA1 replace a silicon fast recovery diode in an existing 650 V design?

Yes, with layout review. Its zero Qrr eliminates snubber networks, but its lower capacitance (70 pF @ 1 V) may increase dv/dt stress on adjacent switches. Verify gate drive strength and add minor RC damping if ringing exceeds 100 V/ns at switch node.

Does IDK02G65C5XTMA1 require special PCB layout considerations?

Yes. The cathode tab must connect to ≥6 cm² of 70 µm thick copper for rated 2 A operation. Keep anode trace short and wide to minimize inductance. Avoid thermal vias under the tab - they reduce solder joint reliability. Use ENIG or immersion silver finish for optimal solder wetting.