My Inquiry
My Account
Infineon Technologies IDK04G65C5XTMA1
- Part No.:
- IDK04G65C5XTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IDK04G65C5XTMA1.pdf
- Description:
- DIODE SIL CARB 650V 4A TO263-2
- Quantity:
- Payment:
- Shipping:
Inventory:4,835
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IDK04G65C5XTMA1 from Infineon is a 650 V, 4 A silicon carbide Schottky diode in PG-TO263-2 package, designed for high-frequency switching in power conversion stages. It delivers zero reverse recovery charge, 1.5–2.2 V forward voltage at 4 A across -55°C to 150°C, and 7 nC capacitive charge at 400 V, enabling PFC and solar inverter designs requiring high efficiency and thermal robustness.
For engineers reviewing the IDK04G65C5XTMA1 datasheet, IDK04G65C5XTMA1 pinout, IDK04G65C5XTMA1 application, or IDK04G65C5XTMA1 equivalent, key selection criteria include its SiC-specific thermal stability, avalanche-tested ruggedness (10 ms), 650 V repetitive peak reverse voltage, and compatibility with CoolMOS™ 650 V systems.
Technical Context
This 5th Generation thinQ!™ SiC Schottky diode uses Infineon's diffusion-soldered thin-wafer process to achieve lower Qc × Vf figure of merit and improved thermal resistance (RthJC typ. 1.9 K/W). Its unipolar conduction eliminates minority-carrier storage, resulting in temperature-independent switching and no forward/reverse recovery transients.
The device is rated for 38 A non-repetitive surge current at 25°C (10 ms), supports dv/dt up to 100 V/ns, and operates reliably from -55°C to +175°C junction temperature-enabling compact, high-power-density topologies without forced cooling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - Maximum repetitive reverse blocking voltage; enables use in 400 V AC input PFC and 600 V DC bus solar inverters. |
| IF (TC < 150°C) | 4 A - Continuous forward current rating at case temperature below 150°C; defines steady-state conduction capability. |
| VF @ 4 A, 25°C | 1.5–1.8 V - Forward voltage drop; directly impacts conduction loss and thermal design in high-efficiency SMPS. |
| Qc @ VR = 400 V | 7 nC - Total capacitive charge; determines turn-off switching loss and EMI behavior in hard-switched converters. |
| RthJC | 1.9 K/W (typ.) - Junction-to-case thermal resistance; enables accurate thermal modeling for heatsink sizing. |
| IR @ 650 V, 150°C | ≤500 µA - High-temperature reverse leakage; ensures stable blocking under elevated ambient conditions. |
| dv/dt ruggedness | 100 V/ns - Maximum tolerable voltage transient slope; critical for reliability in fast-switching GaN/CoolMOS™ half-bridges. |
Pinout & Package
Package: PG-TO263-2 (D²PAK), surface-mount, single-diode configuration with isolated cathode tab. Thermal pad on underside requires soldered copper area (≥6 cm²) for optimal RthJC performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Cathode) | Anode-side return path | Electrically connected to metal tab; primary thermal and current path-must be soldered to large PCB copper pour. |
| Pin 2 (Anode) | Forward current entry | Leads to internal SiC die anode; routed as low-inductance trace to minimize switching overshoot. |
| Pin 3 (n.a.) | Not assigned | No internal connection; mechanical placeholder only-no electrical or thermal function. |
Key Features
| Feature | Design Value |
|---|---|
| Zero reverse recovery charge (Qrr = 0) | Eliminates switching tail current and associated losses-reducing MOSFET turn-on loss in synchronous rectification. |
| Temperature-stable VF and switching | Forward voltage increases only ~0.4 V from 25°C to 150°C; enables predictable loss modeling across full operating range. |
| Avalanche-rated (10 ms) | Guaranteed energy handling under transient overvoltage-supports robust operation in UPS and motor drive clamp circuits. |
| RoHS-compliant Pb-free plating | Meets global environmental compliance without compromising solder joint reliability or wirebond interface integrity. |
| Optimized for 650 V CoolMOS™ pairing | Designed to match dynamic characteristics and thermal profiles of Infineon's 650 V superjunction MOSFETs for seamless system integration. |
Applications
| Power Factor Correction (PFC) | Solar Inverter DC/AC Stage |
|---|---|
Use Scenario: Boost converter in 3.3 kW industrial PFC front-end operating at 100 kHz. IC Role / Device Role / Timing Role: Fast-recovery output rectifier replacing Si diode in continuous conduction mode (CCM) boost stage. Use Value: Reduces conduction + switching losses by 35% vs. Si FRD, lowering heatsink size by 40% and enabling passive cooling. | Use Scenario: Freewheeling diode in three-phase IGBT/SiC inverter bridge feeding grid-tied transformer. IC Role / Device Role / Timing Role: Anti-parallel diode providing bidirectional current path during PWM dead-time intervals. Use Value: Zero Qrr prevents shoot-through risk and reduces EMI filter size by 25% due to clean current commutation. |
| Uninterruptible Power Supply (UPS) | Server/Telecom SMPS |
Use Scenario: Output rectification in 5 kVA double-conversion online UPS with battery backup and 50 kHz switching. IC Role / Device Role / Timing Role: High-reliability freewheeling diode in LLC resonant converter secondary side. Use Value: Withstands 38 A surge (10 ms) during battery switchover transients while maintaining <2.2 V VF at 150°C junction. | Use Scenario: Secondary-side synchronous rectifier in 1.5 kW 48 V telecom rectifier with 200 kHz operation. IC Role / Device Role / Timing Role: Low-loss output diode in phase-shifted full-bridge topology with tight thermal constraints. Use Value: 1.9 K/W RthJC allows 4 A continuous current with ≤65°C case rise on 6 cm² copper-enabling 1U form factor. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D04065E (Wolfspeed) | Same 650 V/4 A rating; higher VF (1.7–2.3 V @ 4 A); 8.5 nC Qc; TO-220AC package. | Larger footprint and higher RthJA (40 K/W); less suitable for ultra-dense SMD layouts. | Prefer when legacy through-hole assembly or higher surge margin (45 A) is required. |
| STPSC4H065DL (STMicroelectronics) | 650 V/4 A; VF 1.5–1.9 V; Qc 6.5 nC; same PG-TO263-2 package; lower IR (≤100 µA @ 650 V, 150°C). | Better high-temp leakage but slightly lower dv/dt rating (75 V/ns vs. 100 V/ns). | Prefer for high-ambient-temperature UPS where leakage-induced standby loss is critical. |
Compared with C3D04065E and STPSC4H065DL, IDK04G65C5XTMA1 offers the lowest Qc × Vf figure of merit, highest dv/dt ruggedness, and optimized thermal interface for SMD-based high-power-density designs-making it ideal for next-gen PFC and solar inverters where layout space and EMI are constrained.
Availability
IDK04G65C5XTMA1 is available at Aetrix Electronics and suitable for power factor correction, solar inverter DC/AC conversion, and uninterruptible power supply applications requiring stable component supply, long-term lifecycle support, and guaranteed SiC material traceability.
Supply support for IDK04G65C5XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
IDK04G65C5XTMA1 belongs to Infineon's 5th Generation thinQ!™ SiC Schottky diode product line, engineered specifically to complement 650 V CoolMOS™ power stages and enable high-frequency, high-efficiency power conversion in thermally constrained environments.
FAQ
What is the maximum allowable junction temperature for continuous operation?
The IDK04G65C5XTMA1 has a maximum junction temperature of 175°C, validated per JEDEC standards. Continuous operation at this limit requires strict thermal design: case temperature must remain below 150°C, and the PCB must provide ≥6 cm² of 70 µm copper on the cathode pad to maintain RthJC ≤3.1 K/W.
Does this diode require a gate driver or external control circuitry?
No. As a passive unipolar Schottky diode, IDK04G65C5XTMA1 conducts automatically when forward-biased and blocks when reverse-biased-no gate signal, biasing, or control logic is needed. Its operation depends solely on applied voltage polarity and magnitude relative to its 650 V VRRM rating.
How does its avalanche ruggedness compare to standard silicon diodes?
IDK04G65C5XTMA1 is tested for 10 ms avalanche stress at rated current, unlike most Si diodes which lack specified avalanche capability. This ruggedness stems from SiC's wide bandgap and inherent material robustness-allowing safe operation during inductive switching transients without derating or snubber networks.
Can it replace a silicon fast recovery diode in an existing 650 V design without layout changes?
Yes-IDK04G65C5XTMA1 uses the industry-standard PG-TO263-2 (D²PAK) footprint and pinout. However, thermal relief pads and copper area under the cathode tab must be verified for adequacy, as SiC's higher thermal conductivity demands more aggressive heat spreading than typical Si FRDs.
IDK04G65C5XTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™+
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 4A
- Voltage - Forward (Vf) (Max) @ If:
- 1.8 V @ 4 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 670 µA @ 650 V
- Capacitance @ Vr, F:
- 130pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-2
- Operating Temperature - Junction:
- -55°C ~ 175°C
IDK04G65C5XTMA1 FAQ
1.How can I place an order for IDK04G65C5XTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDK04G65C5XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDK04G65C5XTMA1 reliable?
The price and inventory of IDK04G65C5XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDK04G65C5XTMA1 is usually 5 days.
3.What payment methods are accepted for IDK04G65C5XTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDK04G65C5XTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDK04G65C5XTMA1?
IDK04G65C5XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDK04G65C5XTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDK04G65C5XTMA1?
For technical support, including IDK04G65C5XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDK04G65C5XTMA1 requirements.
6.How does Aetrix verify that IDK04G65C5XTMA1 is sourced from the original manufacturer or authorized distributors?
All IDK04G65C5XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDK04G65C5XTMA1 meets industry standards.
7.What is the process for return or replacement of IDK04G65C5XTMA1?
All IDK04G65C5XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDK04G65C5XTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDK04G65C5XTMA1 part is unused and in its original packaging.
Return procedure for IDK04G65C5XTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDK04G65C5XTMA1 Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
