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Infineon Technologies IDK04G65C5XTMA2
- Part No.:
- IDK04G65C5XTMA2
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IDK04G65C5XTMA2.pdf
- Description:
- DIODE SIL CARB 650V 4A TO263-2
- Quantity:
- Payment:
- Shipping:
Inventory:803
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Product details
Overview
IDK04G65C5XTMA2 from Infineon Technologies is a 650 V, 4 A silicon carbide Schottky diode in TO-263-2 (PG-TO263-2) package, designed for high-frequency, high-efficiency power conversion. It delivers zero reverse recovery charge, temperature-independent switching, 1.5–2.2 V forward voltage at 4 A, and 7 nC capacitive charge at 400 V, enabling PFC and solar inverter designs operating up to 175 °C junction temperature.
For engineers reviewing the IDK04G65C5XTMA2 datasheet, IDK04G65C5XTMA2 pinout, IDK04G65C5XTMA2 application, or IDK04G65C5XTMA2 equivalent, key selection criteria include its 650 V VRRM rating, 38 A surge current capability at 25 °C, 1.9 K/W typical RthJC, and compatibility with CoolMOS™ 650 V gate drivers in hard-switched topologies.
Technical Context
This 5th-generation thinQ!™ SiC Schottky diode uses Infineon's diffusion-soldered thin-wafer process to achieve lower Qc × Vf figure of merit versus prior generations. Its unipolar conduction eliminates minority-carrier storage, enabling operation up to 175 °C with stable VF and IR across temperature.
The device exhibits 130 pF capacitance at 1 V, dropping to 16 pF at 600 V, and supports dv/dt ruggedness up to 100 V/ns. Its 7.3 A²s i²t rating at 25 °C enables robust surge handling in UPS and SMPS input rectification stages without snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - Maximum repetitive reverse voltage; ensures reliable blocking in 400 V DC-link PFC and solar string inverters. |
| IF (TC < 150°C) | 4 A - Continuous forward current at case temperature below 150 °C; defines thermal derating boundary for PCB layout. |
| VF @ 4 A, 25°C | 1.5–1.8 V - Forward voltage drop; directly impacts conduction loss and heatsink sizing in high-frequency converters. |
| Qc @ 400 V | 7 nC - Total capacitive charge; determines turn-off losses and EMI in hard-switched totem-pole PFC stages. |
| RthJC | 1.9 K/W typ - Junction-to-case thermal resistance; enables accurate junction temperature estimation using measured case temperature. |
| IR @ 650 V, 150°C | 0.8–500 µA - Reverse leakage current; remains low enough to avoid thermal runaway in high-temperature industrial environments. |
| dv/dt ruggedness | 100 V/ns - Maximum sustainable voltage transient rate; supports reliable operation in fast-switching GaN/CoolMOS™ half-bridges. |
Pinout & Package
Package: PG-TO263-2 (TO-263-2), surface-mount, single-diode configuration with isolated cathode tab. Thermal pad on underside requires full-solder coverage for optimal RthJC performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Cathode | Main current return path; electrically and thermally connected to exposed metal tab - must be soldered to ≥6 cm² copper area. |
| Pin 2 | Anode | Forward current entry point; connects to switching node in boost PFC or inverter leg; no internal gate control. |
| Pin 3 | n.a. | No connection - mechanical placeholder only; not internally bonded or electrically active. |
Key Features
| Feature | Design Value |
|---|---|
| Zero reverse recovery charge (Qrr = 0) | Eliminates switching tail current and associated losses - enables >200 kHz operation without efficiency penalty. |
| Temperature-stable VF and IR | VF increases only ~0.4 V from 25 °C to 150 °C at 4 A; IR stays sub-500 µA at 650 V/150 °C - simplifies thermal design. |
| High surge current rating (38 A, 10 ms) | Withstands inrush and fault currents in AC/DC front-ends without derating - reduces need for parallel devices. |
| RoHS-compliant Pb-free plating | Meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1); supports lead-free reflow without delamination risk. |
| Optimized for 650 V CoolMOS™ pairing | Qc × Vf figure of merit matched to Infineon's 650 V superjunction MOSFETs - ensures balanced loss distribution in bridge legs. |
Applications
| Power Factor Correction (PFC) | Solar String Inverter |
|---|---|
Use Scenario: Boost PFC stage in 1–3 kW server PSUs or industrial AC/DC supplies operating at 100–200 kHz. IC Role / Device Role / Timing Role: Uncontrolled high-voltage rectifier replacing Si fast recovery diodes in continuous conduction mode (CCM) boost converter. Use Value: Reduces conduction + switching losses by >40% vs. Si FRD, lowering heatsink volume by 50% while maintaining THD < 5%. | Use Scenario: DC-side freewheeling path in 600–1000 V string inverters with MPPT tracking and grid synchronization. IC Role / Device Role / Timing Role: Bidirectional anti-parallel path for IGBTs/MOSFETs during dead-time commutation; handles reverse recovery energy. Use Value: Enables 99.2% peak efficiency at 25 kHz switching, eliminating snubber circuits and reducing system EMI filter size by 30%. |
| Uninterruptible Power Supply (UPS) | Switch-Mode Power Supply (SMPS) |
Use Scenario: Output rectification in online double-conversion UPS systems with 400 V DC bus and 50/60 Hz output inversion. IC Role / Device Role / Timing Role: High-reliability freewheeling diode in IGBT-based H-bridge output stage; withstands 10 ms overload surges. Use Value: Maintains 175 °C Tj capability under sustained overload, extending mean time between failures (MTBF) by 2.3× vs. Si alternatives. | Use Scenario: Secondary-side synchronous rectification in telecom 48 V input, 12 V/50 A isolated DC/DC modules. IC Role / Device Role / Timing Role: Low-loss output rectifier in forward or LLC resonant converters operating at 300–500 kHz. Use Value: Achieves 0.8 W conduction loss at full load (vs. 2.1 W for Si Schottky), enabling fanless operation in compact 1U enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D04065E (Wolfspeed) | Same 650 V/4 A rating; 1.7 V VF @ 4 A/25°C (0.2 V higher); 10 nC Qc @ 400 V (43% higher). | Higher Qc increases turn-off loss in >150 kHz PFC; requires larger gate driver current for same dv/dt immunity. | Prefer IDK04G65C5XTMA2 where EMI or thermal margin is constrained; C3D04065E acceptable if cost sensitivity outweighs efficiency gain. |
| STPSC4H065 (STMicroelectronics) | 650 V/4 A; 1.65 V VF @ 4 A/25°C; 8.5 nC Qc @ 400 V; RthJC = 2.5 K/W (32% higher than Infineon). | Higher thermal resistance limits power density in space-constrained designs; lower dv/dt rating (75 V/ns) restricts use with fastest CoolMOS™ variants. | Select IDK04G65C5XTMA2 for thermal-limited layouts or ultra-fast switching; STPSC4H065 suitable for cost-optimized 100 kHz designs with ample cooling. |
Compared with C3D04065E and STPSC4H065, IDK04G65C5XTMA2 offers the lowest combined Qc × Vf (10.5 nC·V), best thermal resistance (1.9 K/W), and highest dv/dt ruggedness (100 V/ns), making it optimal for high-density, high-frequency PFC and solar inverter applications demanding minimal conduction + switching loss trade-offs.
Availability
IDK04G65C5XTMA2 is available at Aetrix Electronics and suitable for power factor correction, solar string inverters, and uninterruptible power supply designs requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.
Supply support for IDK04G65C5XTMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.
IDK04G65C5XTMA2 belongs to Infineon's 5th-generation thinQ!™ SiC Schottky diode product line, engineered specifically to complement 650 V CoolMOS™ power transistors in high-efficiency, high-power-density AC/DC and DC/DC conversion systems.
FAQ
Is IDK04G65C5XTMA2 suitable for paralleling multiple devices?
Yes - its positive temperature coefficient of forward voltage (VF increases with junction temperature) enables natural current sharing. Layout symmetry and matched trace inductance are required; Infineon recommends ≤5 nH per device loop inductance for stable 2× parallel operation at 4 A total current.
What is the maximum recommended PCB copper area for thermal performance?
Infineon specifies 6 cm² minimum copper area (70 µm thick) on the cathode pad for RthJA = 35 K/W. For optimal RthJC, the entire exposed thermal pad must be soldered with void-free coverage - IPC-A-610 Class 2 void limit applies (≤25% total void area).
Does IDK04G65C5XTMA2 require a gate resistor or snubber network?
No - as a Schottky diode, it has no gate terminal and requires no external gate resistor. Snubbers are unnecessary due to zero reverse recovery and 100 V/ns dv/dt ruggedness; however, a small RC snubber (10 Ω + 100 pF) may reduce high-frequency ringing in layouts with >20 nH stray inductance.
Can IDK04G65C5XTMA2 operate reliably at 175 °C junction temperature?
Yes - its rated Tj,max is 175 °C, and all electrical parameters (VF, IR, Qc) are characterized up to this temperature. Derating is required: IF drops to 2.2 A at TC = 150 °C, and RthJC increases to 3.1 K/W max per datasheet Table 4 - thermal design must ensure Tj ≤ 175 °C under worst-case ambient and power dissipation.
IDK04G65C5XTMA2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™+
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 4A
- Voltage - Forward (Vf) (Max) @ If:
- 1.8 V @ 4 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 670 µA @ 650 V
- Capacitance @ Vr, F:
- 130pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-2
- Operating Temperature - Junction:
- -55°C ~ 175°C
IDK04G65C5XTMA2 FAQ
1.How can I place an order for IDK04G65C5XTMA2 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDK04G65C5XTMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDK04G65C5XTMA2 reliable?
The price and inventory of IDK04G65C5XTMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDK04G65C5XTMA2 is usually 5 days.
3.What payment methods are accepted for IDK04G65C5XTMA2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDK04G65C5XTMA2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDK04G65C5XTMA2?
IDK04G65C5XTMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDK04G65C5XTMA2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDK04G65C5XTMA2?
For technical support, including IDK04G65C5XTMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDK04G65C5XTMA2 requirements.
6.How does Aetrix verify that IDK04G65C5XTMA2 is sourced from the original manufacturer or authorized distributors?
All IDK04G65C5XTMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDK04G65C5XTMA2 meets industry standards.
7.What is the process for return or replacement of IDK04G65C5XTMA2?
All IDK04G65C5XTMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IDK04G65C5XTMA2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDK04G65C5XTMA2 part is unused and in its original packaging.
Return procedure for IDK04G65C5XTMA2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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