Infineon Technologies IDK05G120C5XTMA1

Overview

IDK05G120C5XTMA1 from Infineon Technologies is a 5th-generation CoolSiC™ 1200 V, 5 A silicon carbide Schottky diode in PG-TO263-2 package, designed as a unidirectional freewheeling/anti-parallel diode in high-voltage switching legs. It delivers 1.50 V forward voltage at 5 A and 25°C, 24 nC total capacitive charge at 800 V and 150°C, and supports 175°C junction operation - enabling high-efficiency PFC and inverter stages in solar inverters and industrial UPS systems.

For engineers reviewing the IDK05G120C5XTMA1 datasheet, IDK05G120C5XTMA1 pinout, IDK05G120C5XTMA1 application, or IDK05G120C5XTMA1 equivalent, key selection criteria include its zero reverse recovery, 1200 V repetitive peak reverse voltage, 1.06 K/W typical junction-to-case thermal resistance, surge capability up to 59 A (10 ms), and dv/dt ruggedness of 150 V/ns for reliable hard-switching operation.

Technical Context

This SiC Schottky diode replaces silicon fast recovery diodes in high-frequency, high-voltage power conversion topologies. Its material physics eliminates minority-carrier storage, resulting in no reverse recovery current and temperature-independent switching behavior - critical for maintaining efficiency across wide thermal ranges in solar central inverters and motor drives.

The device operates with tight VF distribution (±0.15 V typical), low IR (<33 µA at 1200 V/150°C), and robust dv/dt immunity (150 V/ns), allowing direct integration into 1200 V IGBT or SiC MOSFET half-bridges without snubbers. Its Rth(j-c) = 1.06 K/W enables compact heatsinking in space-constrained industrial power supplies.

Key Specifications

Pinout & Package

Package: PG-TO263-2 (D²PAK), surface-mount, isolated tab (cathode-connected backside). Thermal pad on case enables low-inductance, high-current PCB layout with direct thermal coupling to copper pour.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D05120E and STPSC5H12D, IDK05G120C5XTMA1 offers the lowest V_F (1.50 V), best thermal resistance (1.06 K/W), and lowest Q_C (24 nC), making it optimal for efficiency-critical, thermally constrained 1200 V systems where every watt and degree matters.

Availability

IDK05G120C5XTMA1 is available at Aetrix Electronics and suitable for solar central inverters, industrial UPS systems, and high-power motor drives requiring stable component supply, long-term industrial lifecycle support, and guaranteed traceable sourcing.

Supply support for IDK05G120C5XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDK05G120C5XTMA1 belongs to the CoolSiC™ 5th-generation SiC Schottky diode product line, engineered specifically for high-efficiency, high-reliability 1200 V power conversion in solar, UPS, and industrial motor control applications.

FAQ

Is IDK05G120C5XTMA1 suitable for paralleling multiple devices?

Yes - its tight forward voltage distribution (±0.15 V) and positive temperature coefficient of V_F enable stable current sharing without external ballasting resistors. Parallel operation requires matched PCB layout symmetry and shared thermal interface to maintain <5°C inter-device ΔT.

What is the maximum recommended case temperature for continuous operation?

The datasheet specifies 161°C case temperature at 5 A continuous with D=1 duty cycle and Rth(j-c,max). For reliable long-term operation, Infineon recommends limiting T_C to ≤150°C to preserve lifetime and ensure 80% derating margin against absolute maximum ratings.

Does IDK05G120C5XTMA1 require a gate resistor or snubber circuit?

No - as a Schottky diode with zero reverse recovery charge, it does not require gate resistors (it has no gate) or RC snubbers. However, a small RC network (e.g., 100 Ω + 100 pF) may be used across anode–cathode in ultra-fast switching circuits to damp parasitic ringing induced by layout inductance.

Can IDK05G120C5XTMA1 replace a silicon fast recovery diode in an existing design?

Yes - it is a direct drop-in replacement in PG-TO263-2 footprint, but system-level validation is required. Key benefits include elimination of reverse recovery loss and reduced heatsink size; however, higher dV/dt may expose layout parasitics, so PCB trace inductance and grounding must be reviewed.