Infineon Technologies IDK06G65C5XTMA2

Overview

IDK06G65C5XTMA2 from Infineon is a 650 V, 6 A silicon carbide Schottky diode in PG-TO263-2 package, featuring zero reverse recovery charge, 10 nC capacitive charge at 400 V, 2.1 µJ stored energy, and operation up to 175 °C junction temperature. It serves as a high-efficiency freewheeling or output rectifier in high-frequency switch-mode power supplies and solar inverters.

For engineers reviewing the IDK06G65C5XTMA2 datasheet, IDK06G65C5XTMA2 pinout, IDK06G65C5XTMA2 application, or IDK06G65C5XTMA2 equivalent, key selection criteria include its 650 V blocking rating, temperature-independent switching, low Qc × Vf figure of merit, avalanche-tested ruggedness, and thermal resistance of 1.5 K/W (typ) junction-to-case.

Technical Context

This 5th-generation thinQ!™ SiC Schottky diode uses Infineon's diffusion-soldered thin-wafer technology to achieve lower forward voltage drift with temperature and reduced capacitive charge versus prior generations. Its unipolar conduction eliminates minority-carrier storage, enabling true zero-recovery behavior across -55 °C to 175 °C.

The device is rated for 54 A non-repetitive surge current (10 ms, 25 °C), supports dv/dt up to 100 V/ns, and delivers stable 1.5–1.8 V forward drop at 6 A and 25 °C - rising only to 1.8–2.2 V at 150 °C - confirming intrinsic temperature independence of switching performance.

Key Specifications

Pinout & Package

Package: PG-TO263-2 (D²PAK), surface-mount, single-diode configuration with isolated cathode tab. Thermal pad on underside requires soldered copper pour for optimal heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D06065E and STPSC6H065, IDK06G65C5XTMA2 offers the best balance of low RthJC (1.5 K/W typ), moderate Qc (10 nC), and proven avalanche ruggedness - making it optimal for high-reliability industrial power systems requiring both thermal headroom and transient robustness.

Availability

IDK06G65C5XTMA2 is available at Aetrix Electronics and suitable for switch-mode power supplies, solar inverters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable manufacturing origin.

Supply support for IDK06G65C5XTMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDK06G65C5XTMA2 belongs to Infineon's thinQ!™ 5th-generation SiC Schottky diode product line, engineered specifically to complement 650 V CoolMOS™ power devices in high-efficiency, high-power-density AC-DC and DC-DC conversion systems.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IDK06G65C5XTMA2 has a maximum junction temperature rating of 175 °C. Continuous operation at this limit requires maintaining case temperature below 145 °C per datasheet derating curves, achievable with ≥6 cm² of 70 µm copper on FR4 PCB and adequate airflow or heatsinking.

Does this diode require a gate resistor or external snubber circuit?

No - as a unipolar Schottky diode, IDK06G65C5XTMA2 has no gate and exhibits zero reverse recovery charge. Snubbers are unnecessary unless mitigating parasitic oscillations from layout inductance; its 100 V/ns dv/dt rating confirms inherent immunity to false turn-on.

How does its thermal resistance compare to previous-generation SiC diodes?

IDK06G65C5XTMA2 achieves 1.5 K/W (typ) RthJC - a 0.3–0.5 K/W improvement over Gen 3 thinQ!™ diodes - due to Infineon's diffusion-soldered thin-wafer process and optimized die attach, directly enabling higher power density in thermally limited enclosures.

Can this part replace a silicon fast recovery diode in an existing design?

Yes, with layout review: the PG-TO263-2 footprint matches many Si FRDs, but lower VF and zero Qrr reduce conduction and switching losses. Verify thermal interface, ensure adequate dv/dt margin on gate drivers, and confirm no snubber dependency before substitution.