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Infineon Technologies IDK08G120C5XTMA1
- Part No.:
- IDK08G120C5XTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IDK08G120C5XTMA1.pdf
- Description:
- DIODE SIC 1.2KV 22.8A TO263-1
- Quantity:
- Payment:
- Shipping:
Inventory:373
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Product details
Overview
IDK08G120C5XTMA1 from Infineon Technologies is a 5th-generation CoolSiC™ 1200 V, 8 A silicon carbide Schottky diode in PG-TO263-2 package, designed as a high-efficiency freewheeling/anti-parallel diode in hard-switched and resonant PFC and inverter stages. It delivers 1.65 V forward voltage at 8 A and 25°C, zero reverse recovery charge, 28 nC total capacitive charge at 800 V/150°C, and operates up to 175°C junction temperature.
For engineers reviewing the IDK08G120C5XTMA1 datasheet, IDK08G120C5XTMA1 pinout, IDK08G120C5XTMA1 application, or IDK08G120C5XTMA1 equivalent, key selection criteria include its dv/dt ruggedness (150 V/ns), surge current capability (70 A non-repetitive, 10 µs), thermal resistance (0.92 K/W typ. j–c), tight VF distribution, and RoHS-compliant Pb-free plating.
Technical Context
This SiC Schottky diode replaces silicon fast recovery diodes in high-voltage DC-link and boost-stage applications where zero Qrr eliminates switching losses in IGBT or MOSFET-based converters. Its temperature-independent switching behavior and low VF drift (1.95 V max at 8 A/150°C) enable stable performance across industrial ambient ranges.
The device features intrinsic avalanche robustness, specified dv/dt ruggedness up to 150 V/ns under VR ramp conditions, and validated surge capability per JEDEC JESD47 - supporting reliable operation during line transients and motor regeneration events in solar inverters and UPS systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1200 V - supports DC-link voltages up to 1000 V bus with 20% margin for transient overvoltage in solar central inverters. |
| IF (TC=161°C) | 8.0 A - continuous conduction rating at maximum case temperature, enabling compact heatsink design in sealed industrial enclosures. |
| VF @ 8A/25°C | 1.65 V - reduces conduction loss by ~35% vs. comparable Si FRD, directly improving system efficiency at light-to-mid load. |
| QC @ 800V/150°C | 28 nC - determines turn-on loss of paired switch; enables >100 kHz operation without excessive EMI or gate drive stress. |
| Rth(j–c) | 0.92 K/W (typ.) - allows direct mounting to copper baseplate; enables thermal design with <1.2°C/W total path to ambient in forced-air systems. |
| dv/dt ruggedness | 150 V/ns - withstands steep voltage transients in hard-switched topologies without false turn-on or localized failure. |
| Tvj,max | 175°C - extends lifetime in high-temperature environments such as enclosed UPS cabinets or transformerless PV inverters. |
Pinout & Package
Package: PG-TO263-2 (D8512C5), surface-mount, isolated tab, thermally enhanced plastic housing with exposed cathode pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 + Backside Tab | Cathode | Primary heat path and high-current return node; must be soldered to large copper pour or heatsink for thermal and electrical integrity. |
| Pin 2 | Anode | Low-inductance anode connection; routed with minimal loop area to reduce voltage overshoot during di/dt events. |
Key Features
| Feature | Design Value |
|---|---|
| No reverse recovery (Qrr = 0) | Eliminates tail current and associated switching loss in IGBT half-bridges, enabling >50 kHz PFC operation without snubbers. |
| Tight VF distribution (±5% typical) | Enables parallel operation without current imbalance or derating; supports multi-phase interleaved designs with uniform thermal loading. |
| Specified dv/dt ruggedness (150 V/ns) | Guarantees reliable blocking during rapid voltage transients in motor drives and grid-tied inverters without external RC networks. |
| Extended surge current (70 A, 10 µs) | Withstands short-circuit fault currents in UPS output stages and photovoltaic string-level protection without degradation. |
| Pb-free, RoHS-compliant plating | Meets IPC-J-STD-020 MSL1 reflow profile (260°C peak), enabling compatibility with standard lead-free SMT assembly lines. |
Applications
| Solar Central Inverter | Industrial UPS Output Stage |
|---|---|
Use Scenario: DC–AC conversion stage using three-level NPC topology with 1000 V DC bus and 50–100 kHz switching. IC Role / Device Role / Timing Role: Anti-parallel diode for 1200 V IGBTs in T-type inverter legs; provides zero-recovery freewheeling path during dead-time. Use Value: Reduces system conduction loss by 1.2 W per leg vs. Si FRD, lowering heatsink volume by 35% and enabling air-cooled 250 kW designs. | Use Scenario: Double-conversion online UPS with 750 V DC link, operating continuously at 40–60°C ambient in data center racks. IC Role / Device Role / Timing Role: Freewheeling diode in IGBT-based output H-bridge; handles regenerative energy during load transients and bypass mode. Use Value: Maintains <1.95 V VF at 150°C junction, preventing thermal runaway during sustained overload and extending MTBF beyond 200,000 hours. |
| Motor Drive Boost PFC | EV Charging Station Front-End |
Use Scenario: Active front-end rectifier in 11 kW servo drive with 900 V DC bus and interleaved dual-boost architecture. IC Role / Device Role / Timing Role: Output diode in each boost cell; conducts during switch off-time with 100 kHz PWM and high di/dt. Use Value: 28 nC QC minimizes turn-on loss of upstream SiC MOSFETs, achieving >99.1% PFC efficiency at full load. | Use Scenario: 150 kW liquid-cooled DC fast charger with three-phase Vienna rectifier and 1000 V DC output. IC Role / Device Role / Timing Role: High-side clamping diode in bidirectional AC–DC stage; blocks reverse voltage during reactive power flow. Use Value: 150 V/ns dv/dt rating prevents spurious conduction during grid voltage dips, ensuring compliance with IEC 61000-4-11 immunity requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D08065E-TR | 650 V rating, 8 A, TO-263-2; lower VRRM but higher IF(25°C) = 12.5 A; VF = 1.8 V @ 8 A/25°C. | Targeted at 600 V-class industrial motor drives and server PSUs; not suitable for 1000+ V DC bus systems. | Select when system DC bus ≤ 700 V and higher room-temperature current headroom is needed. |
| SDP18N120 | 1200 V, 18 A, TO-247-2; higher IF and surge rating (120 A); VF = 1.75 V @ 18 A/25°C; Rth(j–c) = 0.55 K/W. | Designed for higher-power solar string inverters (≥30 kW) and traction converters requiring >10 A average current. | Choose for systems needing ≥12 A continuous current or lower thermal resistance; requires larger footprint and heatsink. |
Compared with C3D08065E-TR and SDP18N120, IDK08G120C5XTMA1 uniquely balances 1200 V blocking, 8 A thermal-limited current, ultra-low QC, and industry-leading dv/dt ruggedness - making it optimal for space-constrained, high-reliability 10–25 kW industrial inverters where voltage margin and transient immunity are critical.
Availability
IDK08G120C5XTMA1 is available at Aetrix Electronics and suitable for solar central inverters, industrial UPS systems, and EV charging station front-ends requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production programs.
Supply support for IDK08G120C5XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power, sensor, and automotive ICs, with core expertise in wide-bandgap materials and industrial-grade reliability validation.
IDK08G120C5XTMA1 belongs to the CoolSiC™ 5th-generation Schottky diode product line, engineered specifically for high-efficiency, high-voltage renewable energy and uninterruptible power systems demanding zero-recovery performance and extended temperature operation.
FAQ
Is IDK08G120C5XTMA1 suitable for paralleling multiple devices?
Yes - its tight forward voltage distribution (±5% typical) and positive temperature coefficient of VF enable stable current sharing without external ballasting resistors. Parallel operation is validated in Infineon's application note AN2019-09 for 3-phase PFC designs, with derating of 10% per additional device beyond two units.
What is the maximum recommended PCB copper area for thermal performance?
Infineon specifies a minimum 400 mm² exposed copper pad (20 mm × 20 mm) on the primary side, connected via ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch) to internal ground planes. With this layout, Rth(j–c) remains within 1.19 K/W max, supporting 8 A continuous at TC ≤ 161°C.
Does IDK08G120C5XTMA1 require a gate resistor or snubber network?
No - as a Schottky diode, it has no gate and requires no snubber. However, a small RC snubber (10 Ω + 1 nF) across the diode is recommended in hard-switched IGBT bridges with di/dt > 3 kA/µs to suppress high-frequency ringing caused by stray inductance, per Infineon's layout guidelines in AN2020-12.
Can IDK08G120C5XTMA1 replace silicon diodes in existing designs without layout changes?
Yes - it uses the same PG-TO263-2 footprint and pinout as legacy Si FRDs (e.g., IDP08E65D2), enabling drop-in replacement. However, reduced switching loss may require gate resistor adjustment on the paired switch to maintain optimal ZVS/ZCS timing and minimize EMI peaks above 30 MHz.
IDK08G120C5XTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™+
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 1200 V
- Current - Average Rectified (Io):
- 22.8A
- Voltage - Forward (Vf) (Max) @ If:
- 1.95 V @ 8 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 40 µA @ 1200 V
- Capacitance @ Vr, F:
- 365pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-2-1
- Operating Temperature - Junction:
- -55°C ~ 175°C
IDK08G120C5XTMA1 FAQ
1.How can I place an order for IDK08G120C5XTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDK08G120C5XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDK08G120C5XTMA1 reliable?
The price and inventory of IDK08G120C5XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDK08G120C5XTMA1 is usually 5 days.
3.What payment methods are accepted for IDK08G120C5XTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDK08G120C5XTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDK08G120C5XTMA1?
IDK08G120C5XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDK08G120C5XTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDK08G120C5XTMA1?
For technical support, including IDK08G120C5XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDK08G120C5XTMA1 requirements.
6.How does Aetrix verify that IDK08G120C5XTMA1 is sourced from the original manufacturer or authorized distributors?
All IDK08G120C5XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDK08G120C5XTMA1 meets industry standards.
7.What is the process for return or replacement of IDK08G120C5XTMA1?
All IDK08G120C5XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDK08G120C5XTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDK08G120C5XTMA1 part is unused and in its original packaging.
Return procedure for IDK08G120C5XTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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