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Infineon Technologies IDK10G120C5XTMA1
- Part No.:
- IDK10G120C5XTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IDK10G120C5XTMA1.pdf
- Description:
- DIODE SIC 1.2KV 31.9A TO263-1
- Quantity:
- Payment:
- Shipping:
Inventory:835
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Product details
Overview
IDK10G120C5XTMA1 from Infineon Technologies is a 5th-generation CoolSiC™ 1200 V, 10 A silicon carbide Schottky diode in PG-TO263-2 package, featuring zero reverse recovery charge, 41 nC total capacitive charge at 800 V/150°C, 175°C max junction temperature, and 150 V/ns dv/dt ruggedness-used in solar string inverters for high-efficiency boost stages.
For engineers reviewing the IDK10G120C5XTMA1 datasheet, IDK10G120C5XTMA1 pinout, IDK10G120C5XTMA1 application, or IDK10G120C5XTMA1 equivalent, key selection criteria include SiC-specific thermal performance (Rth(j-c) = 0.91 K/W), tight VF distribution at 150°C, surge current capability (IF,SM = 84 A @ 150°C), and industrial qualification per JEDEC 47/20/22.
Technical Context
This SiC Schottky diode replaces conventional silicon fast recovery diodes in high-voltage DC-DC and inverter output stages. Its unipolar conduction eliminates minority-carrier storage, enabling zero reverse recovery loss and stable switching behavior across -55°C to 175°C junction temperatures.
The device operates with a typical forward voltage of 1.5 V at 10 A/25°C and 2.0 V at 10 A/150°C, supported by low capacitance (29 pF at 800 V) and controlled dv/dt immunity-critical for minimizing EMI and snubber losses in 50–100 kHz solar and UPS power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1200 V - supports DC bus voltages up to 1000 V in 3-phase inverters with 20% safety margin |
| IF (TC=155°C) | 10.0 A - continuous conduction rating under industrial thermal derating conditions |
| QC | 41 nC @ 800 V/150°C - determines turn-off energy loss in hard-switched PFC and boost converters |
| Rth(j-c) | 0.91 K/W - enables direct heatsink mounting with predictable thermal drop in compact enclosures |
| dv/dt | 150 V/ns - withstands fast voltage transients without spurious turn-on in high-dV/dt gate-drive environments |
| IF,SM | 84 A @ 150°C/10 ms - sustains short-term overload during grid fault conditions in solar inverters |
| Tvj,max | 175°C - allows operation in sealed industrial enclosures without active cooling |
Pinout & Package
PG-TO263-2 (D1012C5) surface-mount package with isolated copper tab for direct thermal interface. Cathode connected to case and Pin 1; Anode on Pin 2. No isolation pad required-case serves as cathode terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 + Backside (Case) | Cathode | Primary heat path and return node for high-current loop; must be soldered to thermal pad |
| Pin 2 | Anode | High-side connection point for boost inductor or inverter leg; low-inductance routing critical |
Key Features
| Feature | Design Value |
|---|---|
| No reverse recovery current | Eliminates switching loss and associated EMI in hard-switched topologies |
| Tight VF distribution | Reduces parallel diode current imbalance and simplifies thermal design in multi-phase systems |
| Temperature-independent switching | Enables consistent timing margins and loss predictability across full industrial temperature range |
| Extended surge current capability | Supports IEC 62109-compliant overcurrent protection without external crowbar circuits |
| Pb-free, RoHS-compliant plating | Meets IPC-J-STD-020 MSL1 reflow profile (260°C peak) for automated SMT assembly |
Applications
| Solar String Inverter Boost Stage | Industrial UPS Output Rectification |
|---|---|
Use Scenario: High-frequency (50–100 kHz) boost converter operating at 800–1000 V DC link with ambient up to 70°C. IC Role / Device Role / Timing Role: Freewheeling diode in interleaved boost stage; handles bidirectional current during switching transitions. Use Value: 1.5 V VF at 10 A/25°C and minimal temperature drift reduce conduction loss by >35% vs. Si FRD, lowering heatsink size by 40%. | Use Scenario: Three-phase rectifier front-end in 10–50 kVA online UPS with 150°C max case temperature. IC Role / Device Role / Timing Role: Output freewheeling diode in IGBT-based inverter leg; clamps reactive energy during regeneration. Use Value: 84 A surge rating at 150°C ensures reliable operation during battery recharge surges without thermal runaway. |
| Motor Drive Regenerative Braking | EV Charging Station PFC Stage |
Use Scenario: 400–800 V DC bus in servo drives with 10 ms regen pulses at 150°C junction. IC Role / Device Role / Timing Role: Anti-parallel diode for IGBTs in 2-level inverter; conducts reverse current during braking. Use Value: Zero Qrr prevents voltage overshoot and reduces snubber sizing-critical for maintaining IGBT SOA during rapid deceleration. | Use Scenario: 3.3 kW single-phase AC/DC PFC stage with 99% target efficiency and 100 kHz switching. IC Role / Device Role / Timing Role: Boost diode in continuous conduction mode (CCM) PFC; handles 10 A RMS current with low-loss conduction. Use Value: 41 nC QC minimizes turn-off loss and enables >99% efficiency at light load while meeting EN 61000-3-2 harmonic limits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D10120A (Wolfspeed) | Same 1200 V/10 A rating; Rth(j-c) = 0.85 K/W; VF = 1.7 V @ 10 A/150°C (0.2 V higher) | Higher VF increases conduction loss in high-duty-cycle PFC; tighter thermal resistance benefits forced-air designs | Prefer for air-cooled systems where thermal resistance dominates; avoid in passive-cooled solar inverters |
| STPSC10H12D3 (STMicroelectronics) | 1200 V/10 A; QC = 45 nC @ 800 V/150°C; dv/dt = 100 V/ns (50 V/ns lower) | Lower dv/dt rating requires additional gate drive filtering in high-speed IGBT half-bridges | Select when cost sensitivity outweighs dv/dt robustness; verify layout parasitics before deployment |
Compared with C3D10120A and STPSC10H12D3, IDK10G120C5XTMA1 offers superior dv/dt immunity and lower high-temperature VF-making it optimal for unshielded, high-density solar and UPS designs where EMI control and thermal headroom are critical.
Availability
IDK10G120C5XTMA1 is available at Aetrix Electronics and suitable for solar string inverters, industrial UPS systems, and motor drive regenerative braking circuits requiring stable component supply and long-term industrial lifecycle support.
Supply support for IDK10G120C5XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
IDK10G120C5XTMA1 belongs to the CoolSiC™ 5th-generation discrete SiC diode product line, engineered specifically for high-efficiency, high-power-density power conversion in solar, UPS, and EV charging applications.
FAQ
What is the maximum allowable case temperature for continuous operation?
The datasheet specifies IF = 10.0 A at TC = 155°C with D = 1 duty cycle and Rth(j-c,max). Operation above this temperature requires derating per Figure 2; sustained case temperatures beyond 155°C risk exceeding Tvj,max = 175°C even with nominal current.
Does IDK10G120C5XTMA1 require a negative gate voltage or special driving circuitry?
No-this is a Schottky diode, not a transistor. It has no gate terminal and requires no drive circuitry. Only proper thermal interface (soldered case) and low-inductance anode routing are needed to maintain dv/dt immunity and minimize switching oscillations.
Can IDK10G120C5XTMA1 replace a silicon fast recovery diode in an existing design?
Yes, but layout review is mandatory: reduced Qrr eliminates snubber needs, but higher dv/dt demands shorter gate loop lengths and tighter gate-source routing to prevent false triggering of adjacent IGBTs or MOSFETs in shared half-bridge layouts.
Is the PG-TO263-2 package compatible with standard TO-263 reflow profiles?
Yes-it meets JEDEC J-STD-020 MSL1 with 260°C peak reflow temperature. The copper tab must be fully soldered to a thermal pad using ≥75% solder coverage; voiding >20% degrades Rth(j-c) and risks premature thermal failure under surge conditions.
IDK10G120C5XTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™+
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 1200 V
- Current - Average Rectified (Io):
- 31.9A
- Voltage - Forward (Vf) (Max) @ If:
- 1.8 V @ 10 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 18 µA @ 1200 V
- Capacitance @ Vr, F:
- 525pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-2-1
- Operating Temperature - Junction:
- -55°C ~ 175°C
IDK10G120C5XTMA1 FAQ
1.How can I place an order for IDK10G120C5XTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDK10G120C5XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDK10G120C5XTMA1 reliable?
The price and inventory of IDK10G120C5XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDK10G120C5XTMA1 is usually 5 days.
3.What payment methods are accepted for IDK10G120C5XTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDK10G120C5XTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDK10G120C5XTMA1?
IDK10G120C5XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDK10G120C5XTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDK10G120C5XTMA1?
For technical support, including IDK10G120C5XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDK10G120C5XTMA1 requirements.
6.How does Aetrix verify that IDK10G120C5XTMA1 is sourced from the original manufacturer or authorized distributors?
All IDK10G120C5XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDK10G120C5XTMA1 meets industry standards.
7.What is the process for return or replacement of IDK10G120C5XTMA1?
All IDK10G120C5XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDK10G120C5XTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDK10G120C5XTMA1 part is unused and in its original packaging.
Return procedure for IDK10G120C5XTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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