Infineon Technologies IDK10G65C5XTMA2

Overview

IDK10G65C5XTMA2 from Infineon is a 650 V, 10 A silicon carbide Schottky diode in PG-TO263-2 package, designed for high-frequency switching in power conversion stages. It delivers zero reverse recovery charge, 1.5–2.2 V forward voltage at 10 A across –55°C to 150°C, and 15 nC capacitive charge at 400 V - enabling PFC, solar inverters, and UPS systems operating up to 175°C junction temperature.

For engineers reviewing the IDK10G65C5XTMA2 datasheet, IDK10G65C5XTMA2 pinout, IDK10G65C5XTMA2 application, or IDK10G65C5XTMA2 equivalent, key selection criteria include its SiC-specific thermal robustness (R_thJC = 1.0–1.7 K/W), avalanche-tested reliability (10 ms surge), and absence of forward/reverse recovery-critical for EMI-sensitive, high-density SMPS designs.

Technical Context

This 5th-generation thinQ!™ SiC Schottky diode uses Infineon's diffusion-soldered thin-wafer process to achieve lower Q_C × V_F figure of merit versus prior generations. Its unipolar conduction eliminates minority-carrier storage, resulting in temperature-independent switching and no recovery-related losses.

The device is rated for 650 V repetitive peak reverse voltage (V_RRM) and supports 82 A non-repetitive surge current at 25°C with 34 A²s i²t rating. Thermal design leverages low R_thJC and operates reliably up to T_j = 175°C on minimal PCB copper area.

Key Specifications

Pinout & Package

PG-TO263-2 (D²PAK) package with isolated tab, surface-mount footprint, and single-sided thermal path via cathode pad. Pin 1 = Cathode (C), Pin 2 = Anode (A); Pin 3 is not assigned (n.a.).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D10065A and STPSC10H065D, IDK10G65C5XTMA2 offers superior thermal resistance (1.0–1.7 K/W), lowest Q_C (15 nC), and optimized SMD packaging - making it the preferred choice for thermally demanding, high-frequency PFC and inverter applications where board space and cooling are constrained.

Availability

IDK10G65C5XTMA2 is available at Aetrix Electronics and suitable for power factor correction, solar inverters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and renewable energy deployments.

Supply support for IDK10G65C5XTMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon carbide and gallium nitride technologies since 2001.

IDK10G65C5XTMA2 belongs to Infineon's thinQ!™ 5th-generation SiC Schottky diode product line, engineered specifically to complement 650 V CoolMOS™ power devices in high-efficiency, high-power-density AC-DC and DC-AC conversion systems.

FAQ

What is the maximum junction temperature and how is it validated?

The IDK10G65C5XTMA2 is rated for continuous operation up to 175°C junction temperature. This rating is validated per JEDEC JESD22-A108 through 1000-cycle temperature cycling (-55°C to 175°C) and steady-state thermal testing on FR4 PCB with defined copper area, confirming reliability under sustained high-temperature stress.

Does this diode require a gate driver or external control circuitry?

No - the IDK10G65C5XTMA2 is a passive uncontrolled diode with no gate terminal. It conducts when forward-biased and blocks when reverse-biased, requiring no driver, biasing, or control signals. Its behavior is fully defined by applied voltage polarity and magnitude, consistent with all Schottky diodes.

How does its dv/dt ruggedness compare to silicon diodes?

This diode sustains 100 V/ns dv/dt under reverse bias (0–480 V), significantly exceeding typical Si FRDs (20–40 V/ns). That ruggedness stems from SiC's wide bandgap and absence of minority carriers, preventing premature avalanche turn-on during fast voltage transients in hard-switched converters.

Is the PG-TO263-2 package lead-free and compatible with standard reflow profiles?

Yes - the IDK10G65C5XTMA2 uses Pb-free lead plating and is RoHS compliant. It is qualified for standard lead-free reflow profiles (peak 260°C, 20–40 s above 217°C), with thermal validation confirming no solder joint degradation or delamination under JEDEC J-STD-020 moisture sensitivity level 3 conditions.