Infineon Technologies IDK12G65C5XTMA2

Overview

IDK12G65C5XTMA2 from Infineon is a 650 V, 12 A silicon carbide Schottky diode in PG-TO263-2 package, featuring zero reverse recovery charge, 1.5–2.2 V forward voltage (12 A, 25–150°C), 18 nC capacitive charge at 400 V, and 1.5 K/W max junction-to-case thermal resistance. It operates up to 175°C junction temperature and is qualified per JEDEC for high-reliability power conversion.

For engineers reviewing the IDK12G65C5XTMA2 datasheet, IDK12G65C5XTMA2 pinout, IDK12G65C5XTMA2 application, or IDK12G65C5XTMA2 equivalent, key selection criteria include its SiC-based zero-QRR behavior, high dv/dt ruggedness (100 V/ns), surge current rating (97 A, 10 ms), thermal performance on PCB with 6 cm² copper, and compatibility with 650 V CoolMOS™ gate drivers in PFC and solar inverters.

Technical Context

This 5th-generation thinQ!™ SiC Schottky diode uses Infineon's diffusion-soldered die attach and thin-wafer technology to achieve lower figure-of-merit (Qc × Vf) and improved thermal characteristics versus prior generations. Its unipolar conduction eliminates minority-carrier storage, enabling true zero reverse recovery and temperature-independent switching.

The device is optimized for hard-switching topologies where fast di/dt (up to 200 A/µs), low capacitive charge, and stable reverse leakage (<1.35 mA at 650 V, 150°C) are critical. It supports continuous operation at TC ≤ 140°C and transient junction temperatures up to 175°C with validated avalanche robustness (10 ms test).

Key Specifications

Pinout & Package

Package: PG-TO263-2 (D²PAK), surface-mount, single-diode configuration with isolated cathode tab. Thermal pad on underside requires soldered copper area (≥6 cm² recommended) for optimal heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D10065A and STPSC12065DLF, IDK12G65C5XTMA2 delivers lowest Qc × Vf figure-of-merit (31.2 nC·V), best thermal resistance (1.5 K/W), and smallest SMD footprint-making it optimal for space-constrained, high-frequency PFC and solar inverter designs requiring long-term reliability at 150°C junction temperature.

Availability

IDK12G65C5XTMA2 is available at Aetrix Electronics and suitable for power factor correction, solar inverters, uninterruptible power supplies, and industrial switch-mode power supplies requiring stable component supply, JEDEC-qualified reliability, and high-temperature operation up to 175°C junction temperature.

Supply support for IDK12G65C5XTMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

IDK12G65C5XTMA2 belongs to Infineon's 5th-generation thinQ!™ SiC Schottky diode product line, engineered specifically to complement 650 V CoolMOS™ power devices in high-efficiency, high-power-density AC-DC and DC-AC conversion systems.

FAQ

What is the maximum allowable case temperature for continuous operation?

The IDK12G65C5XTMA2 is rated for continuous forward current of 12 A only when case temperature remains below 140°C, as specified in Table 3 of the final datasheet. Exceeding this limit risks thermal runaway due to positive temperature coefficient of forward voltage and increased leakage current above 150°C junction temperature.

Does this diode require a gate driver or external control signal?

No-IDK12G65C5XTMA2 is a passive two-terminal Schottky diode with no gate terminal or control interface. It conducts forward current automatically when anode voltage exceeds cathode voltage by ≥1.5 V and blocks reverse voltage up to 650 V without any external bias or timing circuitry.

How does its avalanche ruggedness compare to standard silicon diodes?

IDK12G65C5XTMA2 is tested for 10 ms avalanche conditions per datasheet Section 2, confirming robustness against transient overvoltage events. Unlike silicon PN diodes, its SiC Schottky structure avoids destructive second breakdown, enabling reliable operation during short-circuit faults in inverters and UPS systems.

Can it be used in parallel with other diodes for higher current handling?

Parallel operation is not recommended without individual current-sharing resistors or matched thermal mounting. The device exhibits a positive temperature coefficient of forward voltage, but variations in VF (±0.3 V) and thermal coupling across packages can cause current imbalance exceeding 20% at full load, risking thermal runaway in one unit.