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Infineon Technologies IDK16G120C5XTMA1
- Part No.:
- IDK16G120C5XTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IDK16G120C5XTMA1.pdf
- Description:
- DIODE SIL CARB 1.2KV 40A TO263-1
- Quantity:
- Payment:
- Shipping:
Inventory:437
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Product details
Overview
IDK16G120C5XTMA1 from Infineon is a 5th Generation CoolSiC™ 1200 V, 16 A silicon carbide Schottky diode in PG-TO263-2 package, featuring zero reverse recovery charge, 57 nC total capacitive charge at 800 V/150°C, and 175°C maximum junction temperature. It serves as a high-efficiency freewheeling or boost diode in high-voltage DC-DC converters and solar inverters.
For engineers reviewing the IDK16G120C5XTMA1 datasheet, IDK16G120C5XTMA1 pinout, IDK16G120C5XTMA1 application, or IDK16G120C5XTMA1 equivalent, key selection criteria include its 1200 V VRRM, 140 A non-repetitive surge current capability, dv/dt ruggedness of 150 V/ns, tight VF distribution (1.65–1.95 V @ 16 A/25°C), and thermal resistance Rth(j-c) = 0.46–0.60 K/W.
Technical Context
This SiC Schottky diode replaces silicon PN diodes in high-frequency, high-temperature power stages where reverse recovery losses dominate efficiency loss. Its unipolar conduction eliminates minority-carrier storage, enabling operation up to 175°C junction temperature with stable VF and near-zero Qrr.
The device uses a planar junction structure with optimized field termination and metallization for robust dv/dt immunity (150 V/ns) and surge survivability (140 A, 10 ms sine half-wave). Its low Ciss (40 pF @ 800 V) and controlled capacitive charge support hard-switched topologies up to 100 kHz without snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1200 V - supports DC bus voltages up to 1000 V in 3-level NPC or active neutral-point-clamped inverters |
| IF | 16 A continuous @ TC = 145°C - enables compact heatsink design in industrial UPS and motor drives |
| QC | 57 nC @ VR = 800 V, Tvj = 150°C - determines turn-off energy loss in hard-switched boost PFC stages |
| VF | 1.65–1.95 V @ IF = 16 A, 25°C - delivers lower conduction loss than Si counterparts across full load range |
| Rth(j-c) | 0.46–0.60 K/W - allows direct mounting to copper baseplate with <1.2 K temperature rise at 16 A |
| dv/dt ruggedness | 150 V/ns - ensures reliable commutation in fast-switching SiC MOSFET half-bridges without oscillation-induced failure |
| Tvj,max | 175°C - enables derated operation in sealed enclosures or high-ambient environments without forced air |
Pinout & Package
Package: PG-TO263-2 (D²PAK), surface-mount, isolated tab (cathode-connected backside), RoHS-compliant lead plating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 + Backside Tab | Cathode | Electrically connected to exposed metal tab; must be mounted to thermally conductive, electrically isolated heatsink |
| Pin 2 | Anode | Soldered to PCB trace carrying forward current; no gate or control function - purely passive conduction path |
Key Features
| Feature | Design Value |
|---|---|
| No reverse recovery current | Eliminates switching loss and EMI spikes during diode turn-off in hard-switched converters |
| Tight VF distribution | ±0.15 V tolerance at 16 A/25°C enables parallel operation without current imbalance |
| Extended surge capability | 140 A non-repetitive surge (10 ms sine half-wave @ 25°C) supports grid fault ride-through in solar inverters |
| Temperature-independent switching | VF increases only 0.6 mV/°C - maintains efficiency stability from -55°C to 175°C |
| Specified dv/dt ruggedness | 150 V/ns rating validated per JEDEC JESD22-A114 - prevents false turn-on in high-dv/dt SiC half-bridges |
Applications
| Solar String Inverter Boost Stage | Industrial UPS Output Rectification |
|---|---|
Use Scenario: High-frequency boost converter operating at 50–100 kHz with 800 V DC-link voltage and ambient up to 70°C. IC Role / Device Role / Timing Role: Freewheeling diode in interleaved boost stage handling 10–15 kW per string. Use Value: Reduces conduction loss by 45% vs. Si FRD and eliminates snubber requirements due to zero Qrr and 150 V/ns dv/dt rating. | Use Scenario: Dual-source static transfer switch with 600–800 V battery backup and 10-year field life requirement. IC Role / Device Role / Timing Role: Output rectifier in high-efficiency LLC resonant DC-DC stage feeding inverter bridge. Use Value: Enables >98.2% peak efficiency and reduces heatsink volume by 35% versus 1200 V Si diode due to 0.46 K/W Rth(j-c) and stable VF at 150°C. |
| Motor Drive Regenerative Braking | EV Charging Station PFC Stage |
Use Scenario: 400–690 V AC input industrial VFD with regenerative braking into DC-link capacitor. IC Role / Device Role / Timing Role: Anti-parallel diode for IGBTs in 3-phase inverter leg, conducting reverse current during deceleration. Use Value: Prevents voltage overshoot and IGBT overvoltage failure during rapid current reversal thanks to 150 V/ns dv/dt rating and absence of reverse recovery tail. | Use Scenario: 22 kW three-phase Vienna rectifier with 900 V DC-link and 100 kHz switching frequency. IC Role / Device Role / Timing Role: Upper-leg diode in bidirectional PFC cell handling 35 A RMS current under THD <3%. Use Value: Achieves 99.1% efficiency at full load and meets EN 61000-3-12 harmonic limits without additional EMI filtering due to soft, zero-Qrr turn-off. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar 1200 V SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D16065A (Wolfspeed) | Same VRRM/IF, but higher VF (1.8–2.1 V @ 16 A/25°C) and larger QC (65 nC) | Lower efficiency in high-frequency PFC; requires larger heatsink at >150°C case temp | Prefer IDK16G120C5XTMA1 when minimizing conduction loss and thermal footprint is critical |
| STPSC16H12D (STMicroelectronics) | 1200 V/16 A, but lower surge rating (110 A vs. 140 A) and no published dv/dt spec | Not recommended for SiC half-bridge commutation with >100 V/ns slew rates | Choose IDK16G120C5XTMA1 for designs requiring JEDEC-validated dv/dt ruggedness and grid-fault surge margin |
Compared with C3D16065A and STPSC16H12D, IDK16G120C5XTMA1 offers superior thermal performance (0.46 K/W vs. ≥0.65 K/W), tighter VF distribution, and documented 150 V/ns dv/dt immunity-making it optimal for high-reliability, high-power-density industrial inverters and EV charging systems.
Availability
IDK16G120C5XTMA1 is available at Aetrix Electronics and suitable for solar string inverters, industrial UPS systems, and motor drive regenerative braking circuits requiring stable component supply and long-term lifecycle assurance.
Supply support for IDK16G120C5XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
IDK16G120C5XTMA1 belongs to the CoolSiC™ 5th Generation family, engineered specifically for high-efficiency, high-reliability power conversion in 1200 V systems where thermal stability, surge resilience, and EMI reduction are critical.
FAQ
Is IDK16G120C5XTMA1 pin-compatible with previous-generation CoolSiC diodes?
No. IDK16G120C5XTMA1 uses the PG-TO263-2 package with cathode on the backside tab and anode on Pin 2. Earlier generations like IDK16G120C3 use different thermal pad layouts and pin assignments. Mechanical mounting and PCB layout must be verified against Infineon's Package Drawing D1612C5.
What is the maximum recommended case temperature for continuous operation?
The datasheet specifies 145°C case temperature for 16 A continuous forward current (IF). Operation above this requires derating per Figure 2 in the datasheet. At 135°C case, rated current increases to 19 A; at 25°C, it reaches 40 A with appropriate heatsinking and duty cycle control.
Does IDK16G120C5XTMA1 require a gate resistor or driver circuit?
No. As a Schottky diode, IDK16G120C5XTMA1 has no gate terminal and operates passively. It conducts when anode voltage exceeds cathode voltage by ≥VF, with no control signal, timing sequence, or external bias required. Its terminals are strictly anode (Pin 2) and cathode (Pin 1 + tab).
Can IDK16G120C5XTMA1 be paralleled with identical units for higher current handling?
Yes, provided layout symmetry, matched thermal paths, and equal-length PCB traces are implemented. The tight VF distribution (±0.15 V) and positive temperature coefficient of VF enable stable current sharing. Derate total current by 10% for two devices and 15% for three or more to account for thermal coupling effects.
IDK16G120C5XTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™+
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 1200 V
- Current - Average Rectified (Io):
- 40A
- Voltage - Forward (Vf) (Max) @ If:
- 1.95 V @ 16 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 80 µA @ 1200 V
- Capacitance @ Vr, F:
- 730pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-2-1
- Operating Temperature - Junction:
- -55°C ~ 175°C
IDK16G120C5XTMA1 FAQ
1.How can I place an order for IDK16G120C5XTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDK16G120C5XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDK16G120C5XTMA1 reliable?
The price and inventory of IDK16G120C5XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDK16G120C5XTMA1 is usually 5 days.
3.What payment methods are accepted for IDK16G120C5XTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDK16G120C5XTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDK16G120C5XTMA1?
IDK16G120C5XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDK16G120C5XTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDK16G120C5XTMA1?
For technical support, including IDK16G120C5XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDK16G120C5XTMA1 requirements.
6.How does Aetrix verify that IDK16G120C5XTMA1 is sourced from the original manufacturer or authorized distributors?
All IDK16G120C5XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDK16G120C5XTMA1 meets industry standards.
7.What is the process for return or replacement of IDK16G120C5XTMA1?
All IDK16G120C5XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDK16G120C5XTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDK16G120C5XTMA1 part is unused and in its original packaging.
Return procedure for IDK16G120C5XTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDK16G120C5XTMA1 Tags
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