Infineon Technologies IDK20G120C5XTMA1

Overview

IDK20G120C5XTMA1 from Infineon Technologies is a 5th-generation CoolSiC™ 1200 V, 20 A silicon carbide Schottky diode in PG-TO263-2 package, featuring zero reverse recovery charge, 82 nC total capacitive charge at 800 V/150°C, and 175°C maximum junction temperature - deployed in solar string inverters and industrial UPS rectifier stages for high-efficiency PFC and output freewheeling.

For engineers reviewing the IDK20G120C5XTMA1 datasheet, IDK20G120C5XTMA1 pinout, IDK20G120C5XTMA1 application, or IDK20G120C5XTMA1 equivalent, key selection criteria include its 1200 V repetitive peak reverse voltage, 20 A continuous forward current at TC = 145°C, dv/dt ruggedness of 150 V/ns, tight VF distribution, and thermal resistance Rth(j-c) of 0.35–0.46 K/W.

Technical Context

This SiC Schottky diode replaces silicon fast recovery diodes in high-voltage, high-frequency switching topologies such as totem-pole PFC and three-level NPC inverters. Its unipolar conduction eliminates minority-carrier storage, enabling operation up to 100 kHz with minimal switching loss and no tail current.

The device uses a planar junction design optimized for low Qc (82 nC), stable VF across temperature (1.5–2.0 V at 20 A), and robust surge capability (198 A non-repetitive IF,SM at 25°C). Its 150 V/ns dv/dt rating ensures reliable commutation in hard-switched IGBT or SiC MOSFET half-bridges.

Key Specifications

Pinout & Package

Package: PG-TO263-2 (D2012C5), surface-mount, isolated heat slug (cathode-connected backside), RoHS-compliant lead plating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC Schottky diode applications.

Compared with C3D02060E and STPSC20H12D, IDK20G120C5XTMA1 delivers superior voltage rating headroom, lowest thermal resistance among 1200 V SMD SiC diodes, and best-in-class Qc for high-frequency PFC - making it optimal for space-constrained, thermally demanding solar and UPS systems.

Availability

IDK20G120C5XTMA1 is available at Aetrix Electronics and suitable for solar string inverters, industrial UPS rectifiers, EV charging station PFC modules, and high-voltage DC power supplies requiring stable component supply and long-term industrial qualification.

Supply support for IDK20G120C5XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

IDK20G120C5XTMA1 belongs to the CoolSiC™ 5th-generation discrete diode product line, engineered specifically for high-efficiency, high-power-density renewable energy and industrial power conversion systems operating above 100 kHz.

FAQ

What is the maximum allowable case temperature for continuous operation?

The IDK20G120C5XTMA1 supports continuous forward current of 20 A at TC = 145°C, with absolute maximum junction temperature of 175°C. Derating is required above 145°C case temperature per the datasheet's IF vs. TC curve; operation beyond 175°C junction temperature risks permanent degradation.

Can this diode be paralleled with identical units for higher current handling?

Yes - due to tight forward voltage distribution and positive temperature coefficient of VF, IDK20G120C5XTMA1 supports stable current sharing when paralleled. Use matched layout, symmetrical PCB traces, and shared thermal plane to ensure <5% current imbalance at full load.

Does the PG-TO263-2 package require thermal vias under the cathode pad?

Yes - the cathode is electrically and thermally connected to the exposed backside metal pad. At least six 0.3 mm diameter thermal vias (filled or plated) per cm² beneath the pad are recommended to achieve the specified Rth(j-c) of 0.35–0.46 K/W in production PCBs.

Is this diode suitable for use with 650 V SiC MOSFETs in a half-bridge configuration?

Yes - its 1200 V VRRM provides 85% voltage margin over a 650 V SiC MOSFET's 1000 V max VDS, satisfying industrial safety standards. The 150 V/ns dv/dt rating ensures immunity to cross-talk during high-speed switching transitions in such configurations.