Infineon Technologies IDL04G65C5XUMA1

Overview

IDL04G65C5XUMA1 from Infineon Technologies is a 650 V, 4 A silicon carbide Schottky diode in PG-VSON-4 package, featuring zero reverse recovery charge, 7 nC capacitive charge at VR=400 V, 1.5–1.7 V forward voltage at 4 A/25°C, and rated for continuous operation up to 150°C junction temperature. It serves as a high-efficiency freewheeling or output rectifier in high-frequency switch-mode power supplies and solar inverters.

For engineers reviewing the IDL04G65C5XUMA1 datasheet, IDL04G65C5XUMA1 pinout, IDL04G65C5XUMA1 application, or IDL04G65C5XUMA1 equivalent, key selection criteria include its SiC-based zero-recovery behavior, thermal resistance of 1.6 K/W (junction-to-case), surge current capability of 29 A (10 ms, TC=25°C), and compatibility with 650 V CoolMOS™ gate drivers in PFC and DC-DC stages.

Technical Context

This 5th-generation thinQ!™ SiC Schottky diode uses Infineon's diffusion-soldered thin-wafer process to achieve lower Qc × Vf figure of merit and improved thermal performance versus prior generations. Its unipolar conduction eliminates minority-carrier storage, enabling operation up to 150°C without degradation in switching speed or leakage.

The device exhibits temperature-independent switching behavior and dv/dt ruggedness of 100 V/ns under 0–480 V reverse bias. Its 130 pF capacitance at 1 V and 16 pF at 600 V supports high-frequency snubberless designs, while the 2.0 K/W max RthJC ensures stable thermal coupling to PCB copper pads in ThinPAK 8x8 layouts.

Key Specifications

Pinout & Package

IDL04G65C5XUMA1 is housed in PG-VSON-4 (ThinPAK 8x8) surface-mount package with exposed drain pad for thermal enhancement. The package measures 8.0 mm × 8.0 mm × 1.0 mm and features bottom-side thermal pad soldered directly to PCB copper area.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D04065E and STPSC4H065DL3, IDL04G65C5XUMA1 offers the lowest RthJC (1.6 K/W), smallest footprint (8×8 mm), and JEDEC-qualified reliability - making it optimal for thermally constrained, high-reliability 650 V PFC and inverter designs.

Availability

IDL04G65C5XUMA1 is available at Aetrix Electronics and suitable for power factor correction, solar inverter output stages, and uninterruptible power supply rectification requiring stable component supply across multi-year production cycles.

Supply support for IDL04G65C5XUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and wide-bandgap devices, with global R&D and manufacturing infrastructure.

IDL04G65C5XUMA1 belongs to the thinQ!™ 5th-generation SiC Schottky diode product line, engineered specifically to complement 650 V CoolMOS™ power transistors in high-efficiency, high-power-density AC-DC and DC-DC conversion systems.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies IF = 4 A is rated for TC < 130°C. At TC = 130°C, junction temperature reaches 150°C using RthJC = 1.6 K/W. Operation above 130°C case temperature violates the continuous current rating and risks accelerated parametric drift or thermal runaway.

Does IDL04G65C5XUMA1 require a gate resistor or snubber network?

No. As a unipolar Schottky diode, it has no gate terminal and requires no gate resistor. Its 100 V/ns dv/dt ruggedness and absence of reverse recovery eliminate need for RC snubbers in typical 650 V hard-switched applications, reducing BOM count and layout complexity.

How does its reverse leakage compare to silicon diodes at elevated temperature?

At 150°C and VR = 650 V, IDL04G65C5XUMA1 exhibits IR ≤ 500 µA - comparable to mid-range Si fast recovery diodes at 25°C. This low, predictable leakage enables stable operation in high-temp environments without forced air cooling or oversized heatsinks.

Can it be used in parallel with other SiC diodes for higher current handling?

Yes, but only with matched VF and layout symmetry. The dual-anode configuration (Pins 3 & 4) supports internal current sharing; external paralleling requires identical trace lengths, thermal vias, and Kelvin sensing to avoid thermal runaway - verified in Infineon Application Note AN2015-07.