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Infineon Technologies IDL04G65C5XUMA2
- Part No.:
- IDL04G65C5XUMA2
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- 4-PowerTSFN
- Datasheet:
-
IDL04G65C5XUMA2.pdf
- Description:
- DIODE SIL CARBIDE 650V 4A VSON-4
- Quantity:
- Payment:
- Shipping:
Inventory:3,064
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Product details
Overview
IDL04G65C5XUMA2 from Infineon is a 650 V, 4 A silicon carbide Schottky diode in PG-VSON-4 package, featuring zero reverse recovery charge (Qc = 7 nC at VR = 400 V), temperature-independent switching, and 150 °C maximum junction temperature - deployed in high-frequency PFC stages of solar inverters and UPS systems.
For engineers reviewing the IDL04G65C5XUMA2 datasheet, IDL04G65C5XUMA2 pinout, IDL04G65C5XUMA2 application, or IDL04G65C5XUMA2 equivalent, key selection criteria include its 650 V repetitive peak reverse voltage, 1.5–1.7 V forward voltage at 4 A/25 °C, 1.6 K/W typical thermal resistance (junction-to-case), avalanche-tested ruggedness, and RoHS-compliant thin-wafer ThinPAK construction.
Technical Context
This SiC Schottky diode uses Infineon's 5th-generation thinQ!™ technology with diffusion-soldered die attach and ultra-thin wafer processing to achieve lower Qc × VF figure of merit versus prior generations. Its unipolar conduction eliminates minority-carrier storage, enabling operation up to 150 °C with stable VF and IR across temperature.
The device exhibits 100 V/ns dv/dt ruggedness under full-rated reverse voltage and delivers 29 A non-repetitive surge current (10 ms, TC = 25 °C). Its 130 pF capacitance at 1 V and 16 pF at 600 V supports high-frequency snubberless designs in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - supports DC-link voltages up to 600 V in 3-phase PFC and solar string inverters |
| IF (TC < 130 °C) | 4 A continuous - enables compact heatsinking in SMD power stages without forced air |
| Qc @ VR = 400 V | 7 nC - reduces turn-off losses in synchronous rectifiers and boost diodes |
| VF @ 4 A, 25 °C | 1.5–1.7 V - lowers conduction loss vs. Si fast recovery diodes by ~30% at rated current |
| RthJC typ. | 1.6 K/W - allows direct PCB copper pad thermal coupling for high-power density layouts |
| IR @ 650 V, 150 °C | 0.8–500 µA - ensures low leakage in high-temperature industrial UPS battery backup circuits |
| dv/dt ruggedness | 100 V/ns - withstands steep voltage transients in LLC resonant converters without oscillation |
Pinout & Package
Package: PG-VSON-4 (ThinPAK 8×8 mm, bottom-side thermal pad, lead-free, RoHS-compliant).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | No connect | Internally floating - no PCB trace required; improves layout symmetry |
| Pin 2 | Anode | High-current input node; bonded to top metal layer for low-inductance routing |
| Pin 3 | Anode | Parallel anode terminal - reduces current density and thermal stress at bond wires |
| Pin 4 | Cathode | Main output node; connected to large copper pour for thermal dissipation |
| Pin 5 | No connect | Thermal pad anchor point - soldered to PCB ground plane for RthJC optimization |
Key Features
| Feature | Design Value |
|---|---|
| Zero reverse recovery charge | Eliminates switching tail current and associated EMI in >100 kHz PFC controllers |
| Temperature-stable VF | VF drift < ±0.2 mV/°C - maintains consistent conduction loss across -55 to +150 °C |
| Avalanche-rated (10 ms) | Guarantees safe single-pulse energy absorption up to 4.2 A²s without degradation |
| Thin-wafer SiC die | Reduces total capacitance by 22% vs. Gen 4 - improves high-frequency efficiency in DC-DC stages |
| Diffusion-soldered attach | Enhances thermal cycling reliability (>1000 cycles) in automotive-grade power modules |
Applications
| Solar String Inverter | Industrial UPS |
|---|---|
Use Scenario: DC-side freewheeling diode in 1000 V-class string inverters operating at 50–100 kHz switching frequency. IC Role / Device Role / Timing Role: Unidirectional current path during MOSFET dead-time; handles bidirectional surge currents during grid faults. Use Value: 7 nC Qc cuts turn-off loss by 65% vs. Si FRD, enabling 98.7% peak efficiency at 4 kW per string. | Use Scenario: Output rectifier in double-conversion online UPS with 150 °C ambient cabinet temperature. IC Role / Device Role / Timing Role: High-reliability DC bus clamp; sustains 650 V reverse bias while blocking battery-side leakage during bypass mode. Use Value: 0.8–500 µA IR range ensures < 10 mW standby loss over full temperature range, extending battery runtime. |
| Server PSU PFC Stage | EV Onboard Charger |
Use Scenario: Boost diode in 3.3 kW active PFC front-end with interleaved 65 kHz operation. IC Role / Device Role / Timing Role: Fast-recovery freewheeling element synchronized to CoolMOS™ gate drive timing. Use Value: 100 V/ns dv/dt rating prevents false triggering of overvoltage protection during transient load steps. | Use Scenario: AC/DC bridge output diode in 6.6 kW OBC with liquid-cooled heatsink interface. IC Role / Device Role / Timing Role: High-temp rectifier handling 4 A RMS at 125 °C case temperature in sealed enclosure. Use Value: 1.6 K/W RthJC enables direct thermal pad mounting to cold plate, reducing ΔTj-c by 28 °C vs. TO-220. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D04065E (Wolfspeed) | Same 650 V/4 A rating; 1.75 V VF max at 4 A/25 °C; TO-252-2 package | Larger footprint and higher RthJA (40 K/W) limits use in ultra-thin server PSUs | Prefer when legacy TO-252 layout reuse is required and thermal pad access is limited |
| SS14HE3_A/H (Vishay) | Si Schottky; 40 V rating only; 0.55 V VF; not suitable for 650 V systems | Only viable in low-voltage auxiliary supplies - not a functional replacement | Reject for main power path; consider only for isolated gate driver bias rails |
Compared with C3D04065E, IDL04G65C5XUMA2 offers 0.2 V lower typical VF and 30% better thermal resistance via exposed thermal pad, making it superior for space-constrained, high-efficiency PFC. SS14HE3_A/H is electrically incompatible due to voltage rating mismatch.
Availability
IDL04G65C5XUMA2 is available at Aetrix Electronics and suitable for solar inverters, industrial uninterruptible power supplies, and server power factor correction circuits requiring stable component supply and long-term lifecycle assurance.
Supply support for IDL04G65C5XUMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
IDL04G65C5XUMA2 belongs to Infineon's thinQ!™ 5th-generation SiC Schottky diode product line, engineered specifically to pair with 650 V CoolMOS™ MOSFETs in high-density, high-efficiency AC-DC and DC-DC conversion systems.
FAQ
Is IDL04G65C5XUMA2 pin-compatible with earlier thinQ!™ generations?
No. While sharing the PG-VSON-4 outline, Pin 1 and Pin 5 are no-connect terminals optimized for Gen 5 thermal and EMI performance - layout revision is required to avoid unintended shorts or thermal bottlenecks. The internal die size and bond wire configuration differ significantly from Gen 3 and Gen 4.
What is the maximum recommended PCB copper area for thermal management?
Infineon specifies a 6 cm² copper area on a 40 mm × 40 mm × 1.5 mm FR4 PCB with 70 µm copper thickness, vertically mounted without airflow. Using less than 4 cm² increases RthJA beyond 45 K/W and risks exceeding 150 °C junction temperature at full 4 A load.
Does this diode require a gate resistor or snubber network?
No. As a unipolar Schottky device with no reverse recovery, IDL04G65C5XUMA2 does not generate turn-off voltage spikes. Snubbers are unnecessary unless parasitic ringing exceeds EMI limits - in which case a 10 Ω/100 pF RC network across cathode-anode may be added.
Can IDL04G65C5XUMA2 be used in parallel configurations?
Yes, but only with matched VF bins (Infineon's "C" grade) and symmetrical PCB trace lengths (< 0.5 mm length difference). Thermal coupling between devices must be identical - shared thermal pad or direct copper interconnect is mandatory to prevent current imbalance above 2.5 A per device.
IDL04G65C5XUMA2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™+
- Package/Case:
- 4-PowerTSFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 4A
- Voltage - Forward (Vf) (Max) @ If:
- 1.7 V @ 4 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 70 µA @ 650 V
- Capacitance @ Vr, F:
- 130pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-VSON-4
- Operating Temperature - Junction:
- -55°C ~ 175°C
IDL04G65C5XUMA2 FAQ
1.How can I place an order for IDL04G65C5XUMA2 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDL04G65C5XUMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDL04G65C5XUMA2 reliable?
The price and inventory of IDL04G65C5XUMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDL04G65C5XUMA2 is usually 5 days.
3.What payment methods are accepted for IDL04G65C5XUMA2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDL04G65C5XUMA2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDL04G65C5XUMA2?
IDL04G65C5XUMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDL04G65C5XUMA2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDL04G65C5XUMA2?
For technical support, including IDL04G65C5XUMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDL04G65C5XUMA2 requirements.
6.How does Aetrix verify that IDL04G65C5XUMA2 is sourced from the original manufacturer or authorized distributors?
All IDL04G65C5XUMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDL04G65C5XUMA2 meets industry standards.
7.What is the process for return or replacement of IDL04G65C5XUMA2?
All IDL04G65C5XUMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IDL04G65C5XUMA2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDL04G65C5XUMA2 part is unused and in its original packaging.
Return procedure for IDL04G65C5XUMA2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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