Infineon Technologies IDL06G65C5XUMA1

Overview

IDL06G65C5XUMA1 from Infineon is a 650 V, 6 A silicon carbide Schottky diode in PG-VSON-4 package, featuring zero reverse recovery charge, 1.5–2.1 V forward voltage at 6 A (25–150 °C), and 10 nC capacitive charge at VR = 400 V - deployed in high-frequency PFC stages of solar inverters and UPS systems.

For engineers reviewing the IDL06G65C5XUMA1 datasheet, IDL06G65C5XUMA1 pinout, IDL06G65C5XUMA1 application, or IDL06G65C5XUMA1 equivalent, key selection criteria include its 650 V repetitive peak reverse voltage, temperature-independent switching behavior, 1.2 K/W typical junction-to-case thermal resistance, and compatibility with CoolMOS™ 650 V power stages in compact, high-efficiency SMPS designs.

Technical Context

This SiC Schottky diode uses Infineon's 5th-generation thinQ!™ technology with diffusion-soldered die attach and thin-wafer processing, enabling lower Qc × Vf figure of merit versus prior generations. Its unipolar conduction eliminates minority-carrier storage, delivering stable dv/dt ruggedness up to 100 V/ns and no forward/reverse recovery transients.

The device operates across –55 °C to +150 °C junction temperature, with thermal resistance RthJC = 1.2 K/W (typ.) and RthJA = 45 K/W on a 6 cm² PCB copper area. It supports surge currents up to 291 A (10 µs) and 36 A (10 ms, TC = 25 °C), meeting JEDEC qualification for industrial power applications.

Key Specifications

Pinout & Package

Package: PG-VSON-4 (ThinPAK 8x8, bottom-side thermal pad), surface-mount, RoHS-compliant, Pb-free lead plating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D06065E and STPSC6H065, IDL06G65C5XUMA1 delivers superior thermal performance (1.2 K/W RthJC), tighter Qc (10 nC), and higher dv/dt immunity - making it optimal for high-density, high-reliability PFC and inverter designs demanding minimal layout overhead.

Availability

IDL06G65C5XUMA1 is available at Aetrix Electronics and suitable for solar inverter DC-AC stages, server PSU active PFC circuits, and industrial UPS inverter bridges requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IDL06G65C5XUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

IDL06G65C5XUMA1 belongs to Infineon's thinQ!™ 5th-generation SiC Schottky diode product line, engineered specifically to pair with CoolMOS™ 650 V power transistors in high-efficiency, high-power-density switch-mode power supplies.

FAQ

Is IDL06G65C5XUMA1 pin-compatible with earlier thinQ!™ generations?

No. IDL06G65C5XUMA1 uses the PG-VSON-4 package with dedicated anode/cathode pinout and bottom thermal pad, differing from Gen3/Gen4 TO-252 and DPAK footprints. Layout redesign is required; electrical characteristics are optimized for lower Qc and improved thermal resistance, not mechanical interchangeability.

What is the maximum recommended PCB copper area for thermal performance?

The datasheet specifies 6 cm² of 70 µm-thick copper on a 40 mm × 40 mm × 1.5 mm FR4 PCB for RthJA = 45 K/W. Increasing copper area beyond 6 cm² yields diminishing returns; thermal simulation confirms <5% RthJA improvement at 10 cm². Ensure full solder coverage under the exposed cathode pad.

Does IDL06G65C5XUMA1 require a gate resistor or snubber network?

No. As a Schottky diode with zero Qrr and no minority-carrier storage, it does not require snubbers or gate resistors. However, a small RC snubber (10 Ω + 100 pF) across anode–cathode is recommended in ultra-high dv/dt environments (>50 V/ns) to suppress parasitic ringing from layout inductance.

Can IDL06G65C5XUMA1 be used in parallel configurations?

Yes, but only with matched devices and symmetrical PCB layout. The VF tolerance (±0.2 V at 6 A, 25 °C) and positive TC of VF ensure inherent current sharing. Use identical trace lengths, thermal vias, and localized copper pours to maintain ΔTj < 5 °C between paralleled units for stable load distribution.