Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IDL06G65C5XUMA2

Part No.:
IDL06G65C5XUMA2
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
4-PowerTSFN
Datasheet:
AetrixIDL06G65C5XUMA2.pdf
Description:
DIODE SIL CARBIDE 650V 6A VSON-4
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,908

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IDL06G65C5XUMA2 from Infineon is a 650 V, 6 A silicon carbide Schottky diode in PG-VSON-4 package, featuring zero reverse recovery charge, 1.5–2.1 V forward voltage (6 A, 25–150 °C), and 10 nC capacitive charge at 400 V. It operates up to 150 °C junction temperature and delivers high surge current capability (36 A, 10 ms) for power factor correction and solar inverters.

For engineers reviewing the IDL06G65C5XUMA2 datasheet, IDL06G65C5XUMA2 pinout, IDL06G65C5XUMA2 application, or IDL06G65C5XUMA2 equivalent, key selection criteria include its SiC-based zero-recovery behavior, thermal resistance of 1.2–1.6 K/W (junction-to-case), and qualification per JEDEC standards for industrial power systems.

Technical Context

This 5th-generation thinQ!™ SiC Schottky diode uses Infineon's diffusion-soldered thin-wafer process to achieve lower Qc × Vf figure of merit and improved thermal performance versus prior generations. Its unipolar conduction eliminates minority-carrier storage, enabling operation without reverse recovery loss or temperature-dependent switching delay.

The device is optimized for complementary use with 650 V CoolMOS™ MOSFETs in hard-switched topologies. Its dv/dt ruggedness of 100 V/ns and avalanche-tested construction support robust operation under fast transient conditions in PFC and inverter stages.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM650 V - Maximum repetitive reverse voltage; defines safe blocking capability in DC-link applications
IF (TC < 130°C)6 A - Continuous forward current rating; usable in thermally constrained SMD layouts up to 130 °C case temperature
VF (6 A, 25 °C)1.5–1.7 V - Forward voltage drop; determines conduction loss and thermal load in high-frequency rectification
Qc (VR = 400 V)10 nC - Capacitive charge; directly impacts turn-off losses and EMI in high-dv/dt switching circuits
RthJC1.2–1.6 K/W - Junction-to-case thermal resistance; enables accurate thermal design for heatsink integration
IR (650 V, 150 °C)1.2–750 µA - Reverse leakage current; remains low despite elevated temperature, preserving efficiency
dv/dt ruggedness100 V/ns - Maximum sustainable voltage slew rate; ensures reliable operation during fast commutation events

Pinout & Package

Package: PG-VSON-4 (ThinPAK 8x8), surface-mount, bottom-side thermal pad, RoHS-compliant lead finish.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1No connectionElectrically isolated; no internal bond wire or die attachment
Pin 2No connectionElectrically isolated; no internal bond wire or die attachment
Pin 3AnodeMain current entry point; connects to cathode of driving switch (e.g., CoolMOS™) in synchronous rectifier or boost PFC
Pin 4AnodeParallel anode terminal; reduces trace inductance and improves current sharing in high-di/dt paths
Pin 5CathodeMain current exit point; ties to DC bus or output capacitor; serves as thermal and electrical reference node

Key Features

FeatureDesign Value
Zero reverse recovery charge (Qrr = 0)Eliminates switching loss and associated EMI in hard-switched converters; enables higher frequency operation
Temperature-independent switching behaviorForward voltage and capacitance remain stable across –55 to +150 °C; simplifies thermal derating and control loop design
High surge current capability (36 A, 10 ms)Withstands inrush and fault currents in UPS and solar inverter startup without degradation
Optimized for high-temperature operation (Tj ≤ 150 °C)Enables compact thermal design in enclosed power supplies where ambient exceeds 85 °C
JEDEC-qualified reliabilityValidated per J-STD-020 and JESD22 for moisture sensitivity and mechanical stress; suitable for automated SMT assembly

Applications

Switch Mode Power SupplyPower Factor Correction

Use Scenario: High-efficiency AC/DC front-end with active PFC stage operating at 65–100 kHz.

IC Role / Device Role / Timing Role: Output rectifier in boost PFC converter; handles continuous 6 A output current with minimal conduction loss.

Use Value: Reduces system cooling requirements by 30% vs. Si diodes due to lower VF and zero Qrr, enabling smaller heatsinks.

Use Scenario: Three-phase industrial PFC module requiring high reliability under 400 V DC-link conditions.

IC Role / Device Role / Timing Role: Fast-recovery freewheeling diode in interleaved boost stage; sustains 100 V/ns dv/dt during MOSFET turn-off.

Use Value: Enables 98.2% peak efficiency at full load due to stable 1.8 V VF at 150 °C and low 10 nC Qc.

Solar InverterUninterruptible Power Supply

Use Scenario: String-level DC/AC conversion in photovoltaic inverters with MPPT tracking and grid synchronization.

IC Role / Device Role / Timing Role: Anti-parallel diode in IGBT/SiC MOSFET half-bridge; conducts reactive current during dead-time intervals.

Use Value: Prevents shoot-through risk and reduces EMI emissions by eliminating reverse recovery tail current.

Use Scenario: Online double-conversion UPS with battery backup, operating continuously at 40–60 °C ambient.

IC Role / Device Role / Timing Role: Output rectifier in high-frequency inverter stage; supports 20 kHz PWM with minimal thermal drift.

Use Value: Extends mean time between failures (MTBF) by 2.3× over Si diodes due to lower operating temperature and reduced thermal cycling stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
C3D06065E (Wolfspeed)Same 650 V/6 A rating; TO-220AC package; higher RthJA (30 K/W); VF = 1.8 V @ 6 A, 150 °CRequires through-hole mounting and larger heatsink; less suited for space-constrained SMD designsPrefer when legacy TO-220 layout compatibility is required and thermal budget allows higher RthJA
STPSC6H065 (STMicroelectronics)650 V/6 A; D²PAK package; Qc = 12 nC @ 400 V; VF = 1.7 V @ 6 A, 25 °C; RthJC = 1.5 K/WHigher Qc increases turn-off loss in >100 kHz designs; slightly lower thermal performance than IDL06G65C5XUMA2Select when existing D²PAK footprint reuse is prioritized and switching frequency remains below 75 kHz

Compared with C3D06065E and STPSC6H065, IDL06G65C5XUMA2 offers superior thermal resistance (1.2–1.6 K/W), lowest Qc (10 nC), and smallest SMD footprint (PG-VSON-4), making it optimal for high-power-density, high-frequency PFC and inverter modules.

Availability

IDL06G65C5XUMA2 is available at Aetrix Electronics and suitable for switch mode power supplies, solar inverters, and uninterruptible power supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for IDL06G65C5XUMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

IDL06G65C5XUMA2 belongs to the thinQ!™ 5th-generation SiC Schottky diode product line, engineered specifically to complement 650 V CoolMOS™ power transistors in high-efficiency, high-power-density energy conversion systems.

FAQ

Is IDL06G65C5XUMA2 pin-compatible with earlier thinQ!™ generations?

No. IDL06G65C5XUMA2 uses the PG-VSON-4 package with dual anode pins (3 and 4) and isolated pins (1 and 2), differing from G3/G4 packages like TO-220AC or D²PAK. Layout redesign is required for migration from prior generations due to footprint and thermal pad configuration changes.

What is the maximum allowable PCB copper area for thermal performance validation?

The datasheet specifies thermal characterization on a 40 mm × 40 mm × 1.5 mm FR4 PCB with 6 cm² copper area (70 µm thick) for the drain connection. Exceeding this area yields marginal improvement; reducing it below 6 cm² degrades RthJC beyond the rated 1.6 K/W maximum.

Does IDL06G65C5XUMA2 require gate drive or external biasing?

No. As a passive Schottky diode, IDL06G65C5XUMA2 has no gate terminal and requires no drive circuitry. It conducts when anode voltage exceeds cathode voltage by ≥1.5 V and blocks when reverse biased up to 650 V, independent of external control signals.

How is avalanche ruggedness verified for IDL06G65C5XUMA2?

All units undergo 10 ms avalanche stress testing at rated VRRM with 14 mA current, per final datasheet Rev. 2.0. This validates single-pulse energy handling capability (∫i²dt = 4.1–6.6 A²s) and confirms robustness against transient overvoltage events in real-world PFC and inverter applications.

IDL06G65C5XUMA2 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolSiC™+
Package/Case:
4-PowerTSFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
6A
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 6 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
110 µA @ 650 V
Capacitance @ Vr, F:
190pF @ 1V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-VSON-4
Operating Temperature - Junction:
-55°C ~ 150°C

IDL06G65C5XUMA2 FAQ

1.How can I place an order for IDL06G65C5XUMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDL06G65C5XUMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDL06G65C5XUMA2 reliable?

The price and inventory of IDL06G65C5XUMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDL06G65C5XUMA2 is usually 5 days.

3.What payment methods are accepted for IDL06G65C5XUMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDL06G65C5XUMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDL06G65C5XUMA2?

IDL06G65C5XUMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDL06G65C5XUMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDL06G65C5XUMA2?

For technical support, including IDL06G65C5XUMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDL06G65C5XUMA2 requirements.

6.How does Aetrix verify that IDL06G65C5XUMA2 is sourced from the original manufacturer or authorized distributors?

All IDL06G65C5XUMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDL06G65C5XUMA2 meets industry standards.

7.What is the process for return or replacement of IDL06G65C5XUMA2?

All IDL06G65C5XUMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IDL06G65C5XUMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDL06G65C5XUMA2 part is unused and in its original packaging.

Return procedure for IDL06G65C5XUMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IDL06G65C5XUMA2 Tags

  • IDL06G65C5XUMA2
  • IDL06G65C5XUMA2 PDF
  • IDL06G65C5XUMA2 Datasheet
  • IDL06G65C5XUMA2 Specifications
  • IDL06G65C5XUMA2 Images
  • Infineon Technologies
  • Infineon Technologies IDL06G65C5XUMA2
  • Buy IDL06G65C5XUMA2
  • IDL06G65C5XUMA2 Price
  • IDL06G65C5XUMA2 Distributor
  • IDL06G65C5XUMA2 Supplier
  • IDL06G65C5XUMA2 Wholesale
Related Products
1N4448X-TP
1N4448X-TP

Micro Commercial Co

1N4148WX-TP
1N4148WX-TP

Micro Commercial Co

1N4148TR
1N4148TR

onsemi

MMSD4148T1G
MMSD4148T1G

onsemi

MMBD914LT3G
MMBD914LT3G

onsemi

BAS16HT1G
BAS16HT1G

onsemi

1N914BWT
1N914BWT

onsemi

BAS21LT1G
BAS21LT1G

onsemi

LL4148
LL4148

onsemi

BAS16LT1G
BAS16LT1G

onsemi

MMSD914T1G
MMSD914T1G

onsemi

BAV21W-7-F
BAV21W-7-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER