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Infineon Technologies IDL08G65C5XUMA1
- Part No.:
- IDL08G65C5XUMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- 4-PowerTSFN
- Datasheet:
-
IDL08G65C5XUMA1.pdf
- Description:
- DIODE SIL CARBIDE 650V 8A VSON-4
- Quantity:
- Payment:
- Shipping:
Inventory:3,703
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Product details
Overview
IDL08G65C5XUMA1 from Infineon Technologies is a 650 V, 8 A silicon carbide Schottky diode in PG-VSON-4 (ThinPAK 8x8) package, featuring zero reverse recovery, 1.5–2.1 V forward voltage at 8 A, 13 nC capacitive charge at 400 V, and rated for continuous operation up to 150 °C junction temperature. It serves as a high-efficiency freewheeling or output rectifier in high-frequency SMPS, PFC stages, and solar inverters.
For engineers reviewing the IDL08G65C5XUMA1 datasheet, IDL08G65C5XUMA1 pinout, IDL08G65C5XUMA1 application, or IDL08G65C5XUMA1 equivalent, key selection criteria include its SiC-based zero-QRR behavior, thermal resistance of 1.0–1.3 K/W (junction-to-case), surge current capability of 43 A (10 ms, 25 °C), and RoHS-compliant Pb-free plating.
Technical Context
This 5th-generation thinQ!™ SiC Schottky diode uses Infineon's diffusion-soldered thin-wafer technology to achieve lower Qc × Vf figure of merit and improved thermal performance versus prior generations. Its unipolar conduction eliminates minority-carrier storage, enabling operation up to 150 °C with stable switching characteristics independent of temperature.
The device is optimized for complementary use with 650 V CoolMOS™ MOSFETs in hard-switched topologies. Its 100 V/ns dv/dt ruggedness and 9.5 A²s i²t rating support robust operation under transient overcurrent and fast voltage transients in industrial power converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - Maximum repetitive reverse voltage; defines safe blocking capability in PFC and inverter DC-link applications |
| IF (TC < 125°C) | 8 A - Continuous forward current rating at case temperature below 125 °C; determines heatsink sizing in conduction-limited designs |
| VF @ 8 A, 25°C | 1.5–1.7 V - Forward voltage drop; directly impacts conduction loss and thermal design in high-current rectification |
| Qc @ 400 V | 13 nC - Total capacitive charge; governs turn-off losses and EMI in high-frequency switching circuits |
| RthJC | 1.0–1.3 K/W - Junction-to-case thermal resistance; enables accurate junction temperature estimation from measured case temperature |
| dv/dt ruggedness | 100 V/ns - Maximum sustainable voltage slew rate; ensures reliable operation during fast switching transitions without spurious turn-on |
| IR @ 650 V, 150°C | 1.6–1000 µA - Reverse leakage current at max rated voltage and temperature; affects standby loss and thermal runaway margin |
Pinout & Package
Package: PG-VSON-4 (ThinPAK 8×8), surface-mount, bottom-side thermal pad, RoHS-compliant Pb-free terminations.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | No connection | Electrically isolated; no internal bond wire or die connection; must remain floating |
| Pin 2 | No connection | Electrically isolated; no internal bond wire or die connection; must remain floating |
| Pin 3 | Anode | Main current-carrying terminal for forward conduction; connected to SiC die anode region |
| Pin 4 | Anode | Parallel anode path; reduces effective series resistance and improves current sharing in high-current layouts |
| Pin 5 | Cathode | Main cathode terminal; bonded to SiC die cathode; primary thermal path to PCB via exposed pad |
Key Features
| Feature | Design Value |
|---|---|
| Zero reverse recovery charge (QRR = 0) | Eliminates switching losses and associated EMI in hard-switched topologies; enables >300 kHz operation without snubbers |
| Temperature-independent switching | Forward voltage and capacitance vary minimally with junction temperature; simplifies thermal derating and control loop stability |
| High surge current capability (43 A, 10 ms) | Withstands inrush and fault currents in UPS and solar inverters without destructive failure |
| Low RthJC (1.0–1.3 K/W) | Enables higher power density by reducing required heatsink area; supports compact, fanless designs |
| JEDEC-qualified reliability | Validated per J-STD-020 and JESD22 for automotive and industrial applications; includes 10 ms avalanche testing |
Applications
| Server SMPS Rectification | Solar String Inverter Output Stage |
|---|---|
Use Scenario: High-density 48 V/12 V intermediate bus converters in datacenter servers operating at 300–500 kHz. IC Role / Device Role / Timing Role: Output freewheeling diode in synchronous rectified LLC resonant converter. Use Value: Reduces conduction + switching losses by 45% vs. Si FRD; lowers heatsink mass by 60% and enables 2U form factor compliance. | Use Scenario: DC-side output rectification in string inverters converting 600–1000 V PV array output to grid-compatible AC. IC Role / Device Role / Timing Role: Anti-parallel diode in IGBT half-bridge; handles reactive current during PWM commutation. Use Value: Eliminates reverse recovery-induced shoot-through risk; improves inverter efficiency by 0.8% at full load and extends lifetime at 65 °C ambient. |
| PFC Boost Diode | Industrial UPS Hold-up Stage |
Use Scenario: Continuous-conduction-mode (CCM) boost PFC stage in 3 kW telecom rectifiers. IC Role / Device Role / Timing Role: High-voltage output rectifier handling 650 V DC-link and 10–15 A peak current. Use Value: Enables 98.2% peak efficiency at 230 VAC input; reduces cooling fan noise by eliminating forced-air requirement. | Use Scenario: DC-link clamping and energy recirculation in double-conversion UPS systems with 400 V nominal DC bus. IC Role / Device Role / Timing Role: Bidirectional energy transfer diode supporting battery charging and inverter regeneration paths. Use Value: Withstands 36 A surge (10 ms) during grid faults; maintains system uptime during brownouts without thermal shutdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D08065E (Wolfspeed) | Same 650 V/8 A rating; TO-220AC package; higher VF (1.7–2.2 V); RthJC = 2.5 K/W | Requires larger heatsink; not suitable for ultra-thin SMD designs; better for through-hole legacy upgrades | Select when board space allows TO-220 mounting and thermal interface is less constrained |
| STPSC8H065DL (STMicroelectronics) | 650 V/8 A; DPAK package; VF = 1.6–2.0 V; Qc = 15 nC; RthJC = 1.8 K/W | Higher Qc increases turn-off loss; slightly lower thermal performance limits power density | Prefer for cost-sensitive industrial drives where 5% efficiency penalty is acceptable |
Compared with C3D08065E and STPSC8H065DL, IDL08G65C5XUMA1 delivers superior power density due to its ThinPAK thermal resistance (1.0–1.3 K/W) and lowest Qc (13 nC), making it optimal for space-constrained, high-frequency, high-reliability applications like server PSUs and solar microinverters.
Availability
IDL08G65C5XUMA1 is available at Aetrix Electronics and suitable for server SMPS rectification, solar string inverter output stages, and industrial PFC boost circuits requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for IDL08G65C5XUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.
IDL08G65C5XUMA1 belongs to Infineon's 5th-generation thinQ!™ SiC Schottky diode product line, engineered specifically to complement 650 V CoolMOS™ MOSFETs in high-efficiency, high-power-density AC-DC and DC-DC conversion systems.
FAQ
Is IDL08G65C5XUMA1 pin-compatible with earlier thinQ!™ generations?
No. IDL08G65C5XUMA1 uses the PG-VSON-4 (ThinPAK 8x8) package with a 5-pin layout including two anode pins and one cathode pin. Earlier G3/G4 thinQ!™ diodes used TO-220AC or D2PAK packages with different pin counts and thermal pad configurations. PCB layout and thermal interface must be redesigned.
What is the maximum recommended PCB copper area for thermal management?
Infineon specifies a 6 cm² copper area on a 40 mm × 40 mm × 1.5 mm FR4 PCB with 70 µm copper thickness, vertically mounted without forced airflow. Using less than this area increases RthJA beyond 45 K/W and risks exceeding 150 °C junction temperature at full 8 A load.
Does IDL08G65C5XUMA1 require a gate resistor or snubber network?
No. As a Schottky diode with no minority carriers, it has no gate and requires no snubber. However, a small RC snubber (e.g., 100 Ω + 100 pF) across the diode may be used to damp high-frequency ringing caused by stray inductance in high-di/dt layouts-this is layout-dependent, not device-driven.
Can IDL08G65C5XUMA1 be used in parallel with other SiC diodes?
Yes, but only with matched devices and symmetrical PCB layout. The dual-anode configuration (Pins 3 and 4) is designed for intra-device current sharing-not inter-device paralleling. For multi-diode parallel operation, external ballasting resistors or current-sharing inductors are required to ensure thermal balance.
IDL08G65C5XUMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™+
- Package/Case:
- 4-PowerTSFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 8A
- Voltage - Forward (Vf) (Max) @ If:
- 1.7 V @ 8 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 140 µA @ 650 V
- Capacitance @ Vr, F:
- 250pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-VSON-4
- Operating Temperature - Junction:
- -55°C ~ 150°C
IDL08G65C5XUMA1 FAQ
1.How can I place an order for IDL08G65C5XUMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDL08G65C5XUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDL08G65C5XUMA1 reliable?
The price and inventory of IDL08G65C5XUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDL08G65C5XUMA1 is usually 5 days.
3.What payment methods are accepted for IDL08G65C5XUMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDL08G65C5XUMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDL08G65C5XUMA1?
IDL08G65C5XUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDL08G65C5XUMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDL08G65C5XUMA1?
For technical support, including IDL08G65C5XUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDL08G65C5XUMA1 requirements.
6.How does Aetrix verify that IDL08G65C5XUMA1 is sourced from the original manufacturer or authorized distributors?
All IDL08G65C5XUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDL08G65C5XUMA1 meets industry standards.
7.What is the process for return or replacement of IDL08G65C5XUMA1?
All IDL08G65C5XUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDL08G65C5XUMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDL08G65C5XUMA1 part is unused and in its original packaging.
Return procedure for IDL08G65C5XUMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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