Infineon Technologies IDL08G65C5XUMA2

Overview

IDL08G65C5XUMA2 from Infineon is a 650 V, 8 A silicon carbide Schottky diode in PG-VSON-4 package, featuring zero reverse recovery charge, 13 nC capacitive charge at 400 V, and 1.5–2.1 V forward voltage across −55 °C to 150 °C. It serves as a high-efficiency freewheeling/anti-parallel diode in hard-switched PFC and solar inverter boost stages.

For engineers reviewing the IDL08G65C5XUMA2 datasheet, IDL08G65C5XUMA2 pinout, IDL08G65C5XUMA2 application, or IDL08G65C5XUMA2 equivalent, key selection criteria include its temperature-independent switching, 100 V/ns dv/dt ruggedness, 1.0–1.3 K/W junction-to-case thermal resistance, and compatibility with 650 V CoolMOS™ half-bridge topologies.

Technical Context

This SiC Schottky diode uses Infineon's 5th-generation thinQ!™ technology with diffusion-soldered die attach and thin-wafer processing, enabling lower Qc × Vf figure of merit versus prior generations. Its unipolar conduction eliminates minority-carrier storage, delivering stable switching behavior across −55 °C to 150 °C junction temperature range.

The device is rated for 650 V repetitive peak reverse voltage (VRRM), withstands 100 V/ns dv/dt transients, and supports 43 A non-repetitive surge current at 25 °C with 9.5 A²s i²t rating - critical for short-circuit robustness in industrial inverters and UPS systems.

Key Specifications

Pinout & Package

IDL08G65C5XUMA2 uses the PG-VSON-4 (ThinPAK 8x8) surface-mount package with exposed thermal pad on bottom side. Pins 1 and 2 are no-connect; pins 3 and 4 are anode terminals; pin 5 is cathode - enabling dual-anode parallel configuration for higher current handling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D08065E and SS10P6, IDL08G65C5XUMA2 offers superior thermal resistance (1.0–1.3 K/W vs. ≥2.5 K/W), dual-anode flexibility for paralleling, and lowest Qc × Vf product - making it optimal for space-constrained, high-power-density 650 V systems.

Availability

IDL08G65C5XUMA2 is available at Aetrix Electronics and suitable for power factor correction, solar inverter boost stages, and uninterruptible power supply designs requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for IDL08G65C5XUMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon carbide and gallium nitride technologies since 2001.

IDL08G65C5XUMA2 belongs to Infineon's 5th-generation thinQ!™ SiC Schottky diode family, engineered specifically to pair with 650 V CoolMOS™ C7 and CE-H devices in high-frequency, high-efficiency AC-DC and DC-DC conversion.

FAQ

Is IDL08G65C5XUMA2 pin-compatible with earlier thinQ!™ generations?

No. IDL08G65C5XUMA2 uses the PG-VSON-4 (ThinPAK 8x8) package with five terminals, while Gen 3 and Gen 4 thinQ!™ diodes use TO-220AC, TO-247-3L, or SMD variants with different pin counts and thermal pad layouts. PCB redesign is required for migration.

What is the maximum recommended PCB copper area for thermal management?

Per Infineon's datasheet, a 6 cm² copper area (70 µm thick) on a 40 mm × 40 mm × 1.5 mm FR4 board is validated for RthJA ≤ 45 K/W. For higher power density, direct heatsink mounting via the exposed cathode pad is recommended to leverage RthJC = 1.0–1.3 K/W.

Does IDL08G65C5XUMA2 require a gate resistor or snubber network?

No. As a Schottky diode, it has no gate terminal and exhibits no minority-carrier switching. However, a small RC snubber (e.g., 10 Ω + 100 pF) across anode–cathode is recommended in high-di/dt PFC applications to damp ringing caused by stray inductance and junction capacitance.

Can IDL08G65C5XUMA2 be used in synchronous rectification topologies?

No. It is a unidirectional Schottky diode with fixed anode–cathode polarity and no control terminal. Synchronous rectification requires actively switched MOSFETs with gate drive signals; this device functions only as a passive, self-commutating rectifier or freewheeling element.