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Infineon Technologies IDL12G65C5XUMA1
- Part No.:
- IDL12G65C5XUMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- 4-PowerTSFN
- Datasheet:
-
IDL12G65C5XUMA1.pdf
- Description:
- DIODE SIL CARB 650V 12A VSON-4
- Quantity:
- Payment:
- Shipping:
Inventory:5,233
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Product details
Overview
IDL12G65C5XUMA1 from Infineon Technologies is a 650 V, 12 A silicon carbide Schottky diode in PG-VSON-4 package, featuring zero reverse recovery charge, 1.5–1.7 V forward voltage at 12 A/25°C, 18 nC capacitive charge at 400 V, and 0.7 K/W typical junction-to-case thermal resistance. It operates up to 150°C junction temperature and is qualified per JEDEC standards for high-efficiency SMPS, PFC, solar inverters, and UPS systems.
For engineers reviewing the IDL12G65C5XUMA1 datasheet, IDL12G65C5XUMA1 pinout, IDL12G65C5XUMA1 application, or IDL12G65C5XUMA1 equivalent, this SiC Schottky diode delivers verified zero-recovery switching, temperature-stable VF and IR, high dv/dt ruggedness (100 V/ns), and validated surge robustness (57 A @ 10 ms, TC = 25°C) - critical for high-frequency, high-temperature power conversion design.
Technical Context
This 5th-generation thinQ!™ SiC Schottky diode uses Infineon's diffusion-soldered thin-wafer process to achieve lower Qc × Vf figure of merit and improved thermal performance versus prior generations. Its unipolar conduction eliminates minority-carrier storage, enabling true zero reverse recovery and immunity to temperature-induced switching variation.
The device is engineered as a direct complement to Infineon's 650 V CoolMOS™ families, supporting synchronous rectification and high-frequency hard-switching topologies. Its 6 cm² PCB cooling requirement and 0.7 K/W RthJC enable compact thermal design without forced airflow in industrial and renewable energy applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - Maximum repetitive reverse voltage; supports 400–600 V DC-link operation with margin in PFC and inverter stages |
| IF (TC < 145°C) | 12 A - Continuous forward current rating at case temperature ≤145°C; defines steady-state conduction capability |
| VF @ 12 A, 25°C | 1.5–1.7 V - Forward voltage drop; determines conduction loss and thermal load under nominal load |
| Qc @ VR=400 V | 18 nC - Total capacitive charge; directly impacts turn-off switching loss in high-dv/dt circuits |
| RthJC (typ) | 0.7 K/W - Junction-to-case thermal resistance; enables accurate junction temperature estimation with measured case temp |
| dv/dt ruggedness | 100 V/ns - Maximum sustainable voltage transient rate; ensures reliable operation in fast-switching converters |
| IR @ 650 V, 150°C | 2.4–1350 µA - Reverse leakage current range; low and stable vs. Si diodes, minimizing standby loss |
Pinout & Package
Package: PG-VSON-4 (ThinPAK 8×8 mm, bottom-side thermal pad). Exposed drain pad (Pins 3 & 4) serves as primary thermal and electrical path; Pins 1 & 2 are no-connect terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | No-connect | Electrically isolated; no internal connection - must remain unconnected in layout |
| Pin 2 | No-connect | Electrically isolated; no internal connection - must remain unconnected in layout |
| Pin 3 | Anode | Primary anode terminal; bonded to SiC die top metallization; used for high-current forward conduction |
| Pin 4 | Cathode / Drain Pad | Exposed copper thermal pad acting as cathode; provides low-inductance, low-resistance return path and primary heat dissipation surface |
Key Features
| Feature | Design Value |
|---|---|
| Zero reverse recovery charge (Qrr = 0) | Eliminates switching tail current and associated losses, enabling >200 kHz operation without snubbers |
| Temperature-independent switching behavior | VF and Qc remain stable from –55°C to 150°C - simplifies thermal derating and control loop design |
| High surge current capability (57 A, 10 ms) | Withstands inrush and fault currents in AC/DC front-ends and DC-link protection without degradation |
| Optimized for high-temperature operation (Tj ≤ 150°C) | Enables smaller heatsinks and higher power density in enclosed or ambient-heated environments |
| Pb-free, RoHS-compliant lead plating | Meets global environmental compliance requirements for industrial and renewable energy equipment |
Applications
| Switch Mode Power Supply | Power Factor Correction |
|---|---|
Use Scenario: High-frequency secondary-side rectification in telecom and server PSUs operating at 100–300 kHz. IC Role / Device Role / Timing Role: SiC Schottky diode replacing Si FRD or MOSFET synchronous rectifier in LLC resonant and phase-shifted full-bridge topologies. Use Value: Reduces conduction + switching losses by >30% vs. Si diodes, lowering output rectifier temperature rise by ≥15°C at 12 A load. | Use Scenario: Boost diode in active PFC stages for industrial motor drives and EV chargers. IC Role / Device Role / Timing Role: Unidirectional high-voltage, high-current freewheeling path during boost switch off-time. Use Value: Enables 99%+ PFC efficiency at 25 kHz switching with <1.5 V forward drop and no reverse recovery-induced EMI spikes. |
| Solar Inverter | Uninterruptible Power Supply |
Use Scenario: Freewheeling diode in three-phase IGBT/SiC MOSFET H-bridge inverters for string and central PV systems. IC Role / Device Role / Timing Role: Bidirectional current handling during dead-time commutation and reactive power flow. Use Value: Maintains <2.1 V VF at 150°C and 12 A, limiting junction temperature rise and improving inverter MTBF by >25%. | Use Scenario: Output rectification and battery charging path in double-conversion online UPS units. IC Role / Device Role / Timing Role: High-reliability, high-surge-capability diode for DC bus isolation and bidirectional energy transfer. Use Value: Survives 50 A surge events (10 ms) without parameter shift, ensuring uninterrupted backup operation during grid transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D10065A (Wolfspeed) | Same 650 V/10 A rating; 1.7 V VF @ 10 A, 25°C; 17 nC Qc; TO-220-2L package | Larger footprint and higher RthJA (2.5 K/W); requires external heatsink mounting | Select when board-level thermal management allows discrete heatsinking and leaded assembly is preferred. |
| STPSC12065DL (STMicroelectronics) | 650 V/12 A; 1.6 V VF @ 12 A, 25°C; 20 nC Qc; DPAK package with exposed cathode pad | Higher RthJC (1.2 K/W); less efficient thermal coupling than ThinPAK's bottom-side cooling | Select when existing DPAK footprint reuse is required and 0.5 K/W higher thermal resistance is acceptable. |
Compared with C3D10065A and STPSC12065DL, IDL12G65C5XUMA1 offers superior thermal performance (0.7 K/W RthJC) and smallest footprint (8×8 mm), making it optimal for space-constrained, high-power-density designs where bottom-side cooling is implemented.
Availability
IDL12G65C5XUMA1 is available at Aetrix Electronics and suitable for switch mode power supplies, power factor correction circuits, and solar inverters requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.
Supply support for IDL12G65C5XUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.
IDL12G65C5XUMA1 belongs to Infineon's thinQ!™ 5th-generation SiC Schottky diode product line, designed specifically to pair with CoolMOS™ 650 V power devices in high-efficiency, high-frequency AC/DC and DC/AC conversion systems.
FAQ
What is the maximum allowable junction temperature for continuous operation?
The IDL12G65C5XUMA1 has a maximum rated junction temperature of 150°C. Continuous operation at this limit requires maintaining case temperature below 145°C per datasheet derating curves, with thermal design based on the 0.7 K/W typical RthJC and verified PCB copper area (6 cm²).
Does this diode require a gate driver or external control signal?
No - IDL12G65C5XUMA1 is a passive two-terminal Schottky diode with no gate terminal or control interface. It conducts forward current automatically when anode voltage exceeds cathode voltage by ≥1.5 V, and blocks reverse voltage up to 650 V without any external bias or timing circuitry.
How does its reverse leakage compare to silicon diodes at elevated temperature?
At 150°C and 650 V reverse bias, IDL12G65C5XUMA1 exhibits 2.4–1350 µA IR - still 10–100× lower than equivalent Si FRDs (typically >100 µA at 125°C). This low, predictable leakage minimizes standby power loss and avoids thermal runaway in parallel configurations.
Can it be used in parallel with other diodes for higher current handling?
Yes - its positive temperature coefficient of forward voltage (VF increases with Tj) enables inherently self-balancing current sharing. Parallel operation requires matched layout symmetry, identical thermal paths, and shared copper area to maintain <2°C inter-device temperature delta for stable load distribution.
IDL12G65C5XUMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™+
- Package/Case:
- 4-PowerTSFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 12A
- Voltage - Forward (Vf) (Max) @ If:
- 1.7 V @ 12 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 190 µA @ 650 V
- Capacitance @ Vr, F:
- 360pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-VSON-4
- Operating Temperature - Junction:
- -55°C ~ 150°C
IDL12G65C5XUMA1 FAQ
1.How can I place an order for IDL12G65C5XUMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDL12G65C5XUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDL12G65C5XUMA1 reliable?
The price and inventory of IDL12G65C5XUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDL12G65C5XUMA1 is usually 5 days.
3.What payment methods are accepted for IDL12G65C5XUMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDL12G65C5XUMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDL12G65C5XUMA1?
IDL12G65C5XUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDL12G65C5XUMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDL12G65C5XUMA1?
For technical support, including IDL12G65C5XUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDL12G65C5XUMA1 requirements.
6.How does Aetrix verify that IDL12G65C5XUMA1 is sourced from the original manufacturer or authorized distributors?
All IDL12G65C5XUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDL12G65C5XUMA1 meets industry standards.
7.What is the process for return or replacement of IDL12G65C5XUMA1?
All IDL12G65C5XUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDL12G65C5XUMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDL12G65C5XUMA1 part is unused and in its original packaging.
Return procedure for IDL12G65C5XUMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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