Infineon Technologies IDL12G65C5XUMA2

Overview

IDL12G65C5XUMA2 from Infineon is a 650 V, 12 A silicon carbide Schottky diode in PG-VSON-4 package, featuring zero reverse recovery charge, 1.5–2.1 V forward voltage (12 A, 25–150 °C), 18 nC capacitive charge at 400 V, and 0.7–0.9 K/W junction-to-case thermal resistance-designed for high-frequency PFC stages in solar inverters and UPS systems.

For engineers reviewing the IDL12G65C5XUMA2 datasheet, IDL12G65C5XUMA2 pinout, IDL12G65C5XUMA2 application, or IDL12G65C5XUMA2 equivalent, key selection criteria include its SiC-based zero-recovery behavior, 150 °C max junction temperature, 650 V repetitive peak reverse voltage, and thermal performance validated under 10 ms avalanche stress testing per JESD22.

Technical Context

This 5th-generation thinQ!™ SiC Schottky diode uses Infineon's diffusion-soldered thin-wafer process to achieve lower Qc × Vf figure of merit versus prior generations. Its unipolar conduction eliminates minority-carrier storage, enabling operation up to 150 °C with stable switching characteristics independent of temperature.

The device is optimized as a high-efficiency freewheeling or boost diode in hard-switched topologies. Its 100 V/ns dv/dt ruggedness and 57 A surge current rating (10 ms, 25 °C) support robust operation in high-dV/dt SMPS and PFC circuits without snubbers.

Key Specifications

Pinout & Package

Package: PG-VSON-4 (ThinPAK 8x8 mm, bottom-side thermal pad, RoHS-compliant lead plating).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D10065A and STPSC12065DLF, IDL12G65C5XUMA2 delivers the lowest Qc × Vf product and best thermal resistance in a surface-mount 8×8 mm package-making it optimal for space-constrained, high-frequency, high-temperature PFC and inverter designs.

Availability

IDL12G65C5XUMA2 is available at Aetrix Electronics and suitable for solar inverters, uninterruptible power supplies, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production ramp-up.

Supply support for IDL12G65C5XUMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDL12G65C5XUMA2 belongs to Infineon's 5th-generation thinQ!™ SiC Schottky diode family-engineered to complement 650 V CoolMOS™ MOSFETs in high-efficiency, high-power-density AC–DC and DC–DC conversion systems.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IDL12G65C5XUMA2 is rated for continuous operation up to 150 °C junction temperature, with derating applied beyond 145 °C case temperature per Table 3. Its thermal resistance (RthJC ≤ 0.9 K/W) and stable electrical parameters across temperature enable reliable use in sealed, convection-cooled enclosures.

Does this diode require a gate resistor or snubber circuit?

No. As a unipolar Schottky diode, IDL12G65C5XUMA2 has no gate and exhibits zero reverse recovery charge. Its 100 V/ns dv/dt ruggedness and low stored charge eliminate the need for snubbers in typical 65–100 kHz PFC and inverter applications, simplifying layout and reducing component count.

How does the PG-VSON-4 package improve thermal performance over standard DPAK?

The PG-VSON-4 package features an exposed bottom thermal pad soldered directly to large PCB copper areas, achieving RthJC as low as 0.7 K/W-up to 40% better than standard DPAK (typically ≥1.2 K/W). This allows higher power dissipation within the same board area and improves long-term reliability under thermal cycling.

Is avalanche testing performed on every production unit?

Per the final data sheet Rev. 2.0, all IDL12G65C5XUMA2 devices undergo 10 ms avalanche stress testing at rated VRRM, verifying robustness against inductive switching transients. This test is part of Infineon's qualified production screening-not sample-based-and ensures consistent ruggedness across manufacturing lots.