Infineon Technologies IDM08G120C5XTMA1

Overview

IDM08G120C5XTMA1 from Infineon Technologies is a 5th Generation CoolSiC™ 1200 V, 8 A silicon carbide Schottky diode in PG-TO252-2 package, designed for high-efficiency industrial power conversion. It delivers zero reverse recovery current, 28 nC total capacitive charge at 800 V/150°C, 1.65–2.85 V forward voltage range (8 A, 25–150°C), and operates up to 175°C junction temperature-enabling compact solar inverters and PFC stages.

For engineers reviewing the IDM08G120C5XTMA1 datasheet, IDM08G120C5XTMA1 pinout, IDM08G120C5XTMA1 application, or IDM08G120C5XTMA1 equivalent, key selection criteria include its dv/dt ruggedness (150 V/ns), tight VF distribution, surge capability (70 A @ 10 ms, TC=25°C), and thermal resistance Rth(j-c) of 0.7–0.9 K/W for thermal design validation.

Technical Context

This SiC Schottky diode replaces silicon fast recovery diodes in hard-switched and high-frequency topologies. Its unipolar conduction eliminates minority-carrier storage, enabling true zero Qrr and stable switching behavior across -55°C to 175°C ambient operation.

The device uses a planar SiC junction with optimized field termination and metallization for robust 1200 V blocking. Its low Coss (20 pF @ 800 V) and predictable QC support high-speed ZVS/ZCS transitions in three-level NPC and T-type inverters.

Key Specifications

Pinout & Package

Package: PG-TO252-2 (DPAK), surface-mount, copper-tab cathode, thermally enhanced plastic housing with exposed cathode pad for PCB heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 1200 V SiC Schottky diode applications.

Compared with C3D08065E-TR and STPSC8H12D, IDM08G120C5XTMA1 uniquely combines 1200 V rating, 0.7–0.9 K/W thermal resistance, and guaranteed 150 V/ns dv/dt ruggedness-making it the only choice for high-reliability, high-power-density solar and UPS applications requiring full 1000 V DC-link margin.

Availability

IDM08G120C5XTMA1 is available at Aetrix Electronics and suitable for solar inverters, uninterruptible power supplies, motor drives, and power factor correction circuits requiring stable component supply across multi-year production cycles.

Supply support for IDM08G120C5XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This part belongs to the CoolSiC™ 5th Generation family, engineered specifically for high-efficiency, high-reliability industrial power conversion where thermal stability, switching speed, and long-term parametric consistency are critical.

FAQ

What is the maximum allowable case temperature for continuous operation?

The device supports continuous operation up to TC = 157°C at rated 8 A forward current, as defined by its Rth(j-c) max and thermal derating curve. At TC = 135°C, it delivers 13 A; at TC = 25°C, it handles 27 A. Exceeding 157°C risks exceeding the 175°C junction limit under worst-case thermal resistance conditions.

Does IDM08G120C5XTMA1 require a gate resistor or snubber network?

No-this is a Schottky diode with no gate terminal. Unlike MOSFETs or IGBTs, it requires no gate drive circuitry. However, a small RC snubber (e.g., 10 Ω + 100 pF) is recommended across anode–cathode in high-dI/dt PFC boost stages to suppress ringing caused by stray inductance interacting with its 20 pF Coss at 800 V.

Can this diode be paralleled with identical units for higher current capacity?

Yes-its tight forward voltage distribution (±0.15 V at 8 A) and positive temperature coefficient of VF enable stable current sharing without external ballasting resistors. Layout symmetry (matched trace length/impedance) and shared thermal plane are required to maintain <10% current imbalance at full load across two devices.

Is the PG-TO252-2 package compatible with standard reflow soldering profiles?

Yes-the device is qualified for MSL1 per J-STD-020 and supports peak reflow temperatures up to 260°C for ≤30 seconds. Recommended profile includes ramp-up ≤3°C/s, preheat 150–200°C for 90–120 s, soak 217°C for 60–90 s, and peak at 245–260°C for ≤30 s, with cooling rate ≤6°C/s.