Infineon Technologies IDP04E120

Overview

IDP04E120 from Infineon Technologies is a 1200 V, 11.2 A ultrafast recovery rectifier diode in TO-220AC package, designed for high-voltage switching power supplies and PFC stages. It features 75 ns reverse recovery time, 45 A non-repetitive peak forward surge current, and 150 °C maximum junction temperature.

For engineers reviewing the IDP04E120 datasheet, IDP04E120 pinout, IDP04E120 application, or IDP04E120 equivalent, key selection criteria include reverse voltage rating, soft recovery behavior, thermal resistance (R_thJC = 1.2 K/W), and TO-220AC mounting compatibility with standard heatsinks.

Technical Context

This diode employs optimized lifetime control for soft, low-noise reverse recovery-critical in high-frequency bridge rectifiers and boost PFC circuits. Its 1200 V blocking capability supports universal-input offline SMPS designs up to 3 kW.

The device operates with a forward voltage drop of 2.6 V at 11.2 A and 150 °C, enabling efficient conduction while maintaining robust avalanche ruggedness (E_AS = 120 mJ). Thermal performance is validated via JEDEC-standard TO-220AC mounting conditions.

Key Specifications

Pinout & Package

TO-220AC package with isolated tab; single-diode configuration. Mounting hole centered on tab for mechanical stability and thermal interface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast high-voltage rectifier applications.

Compared with STTH1212D, IDP04E120 offers superior avalanche ruggedness and thermal efficiency; versus MUR1220CT, it trades 10 ns slower recovery for 200 V higher blocking voltage-enabling use in higher-voltage, higher-reliability systems where voltage margin outweighs minimal t_rr gain.

Availability

IDP04E120 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, uninterruptible power supplies, and solar string inverters requiring stable component supply and long-term production continuity.

Supply support for IDP04E120 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

IDP04E120 belongs to Infineon's "CoolSiC™-Ready" silicon diode portfolio, engineered for seamless integration with SiC MOSFETs in high-efficiency, high-power-density systems.

FAQ

Is IDP04E120 compatible with standard TO-220AC heatsinks?

Yes. The device uses JEDEC-standard TO-220AC outline with isolated metal tab, matching common clip-on and screw-mounted heatsinks. Thermal interface material must be applied between tab and heatsink, and electrical isolation is required unless cathode is referenced to system ground.

What is the maximum allowable case temperature for continuous operation?

The maximum case temperature is 110 °C at rated I_F(AV) = 11.2 A, based on R_thJC = 1.2 K/W and T_jmax = 150 °C. Derating is required above this temperature; full current is not sustainable at T_C > 110 °C without additional cooling.

Does IDP04E120 require a snubber circuit in PFC applications?

No snubber is required for typical boost PFC operation due to its soft recovery characteristic and 500 V/μs dV/dt rating. However, a small RC snubber may still be used to damp parasitic ringing in layouts with high stray inductance (>20 nH).

Can IDP04E120 replace older 1000 V diodes like BYW98-100 in existing designs?

Yes, but only if the circuit's peak reverse voltage does not exceed 1000 V. IDP04E120's 1200 V rating allows direct upgrade where higher voltage margin is needed; however, its 2.6 V V_F is ~0.2 V higher than BYW98-100, requiring verification of thermal headroom at full load.