Infineon Technologies IDP20C65D2XKSA1

Overview

IDP20C65D2XKSA1 from Infineon Technologies is a dual common-cathode emitter-controlled diode (ECD) optimized for high-frequency, hard-switched boost stages in continuous conduction mode (CCM) power factor correction (PFC). It features 650 V blocking voltage, 2 × 10 A DC forward current per diode at TC = 100°C, 1.6 V typical forward voltage at 10 A and 25°C, 28 ns reverse recovery time, and operation up to 175 °C junction temperature.

For engineers reviewing the IDP20C65D2XKSA1 datasheet, IDP20C65D2XKSA1 pinout, IDP20C65D2XKSA1 application in CCM PFC, or IDP20C65D2XKSA1 equivalent for high-voltage fast-recovery diodes, this page delivers verified electrical parameters, thermal behavior, soft-switching performance, and package-specific mounting guidance directly applicable to industrial power supply design.

Technical Context

The IDP20C65D2XKSA1 implements Infineon's proprietary emitter-controlled diode technology-distinct from standard PN or Schottky structures-to achieve low Qrr (0.16 µC typ.) and soft reverse recovery with minimal voltage overshoot. Its dual-diode configuration shares a common cathode terminal, enabling compact interleaved or parallel PFC designs without external bus coupling.

Thermal design is constrained by Rth(j–c) = 2.20 K/W per diode and a maximum junction temperature of 175 °C, requiring direct heatsink mounting via the backside cathode tab. The 7.0 nH internal emitter inductance is measured 5 mm from the case, supporting accurate layout modeling for high-di/dt switching.

Key Specifications

Pinout & Package

Supplied in PG-TO220-3 package with isolated mounting screw hole and electrically active backside cathode. The case serves as the common cathode (C), while pins 1 and 3 are independent anodes (A1, A2).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage fast-recovery diode applications.

Compared with STTH2006DIP and IXYS MDD100-16N1B, the IDP20C65D2XKSA1 delivers optimal balance of 650 V rating, 28 ns recovery, and monolithic dual-common-cathode integration-reducing PCB area by 40%, eliminating inter-device mismatch, and enabling tighter thermal coupling for consistent aging in CCM PFC.

Availability

IDP20C65D2XKSA1 is available at Aetrix Electronics and suitable for industrial CCM PFC boost stages, server power supply input rectification, motor drive front-ends, and renewable energy inverter DC links requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IDP20C65D2XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

IDP20C65D2XKSA1 belongs to Infineon's Emitter Controlled Diode (ECD) product line, engineered specifically for high-efficiency, high-reliability CCM PFC stages where soft switching, low Qrr, and thermal robustness are critical.

FAQ

What is the maximum allowable case temperature for continuous operation?

The IDP20C65D2XKSA1 supports continuous operation up to 100°C case temperature while delivering 10 A per diode. At higher case temperatures, current must be linearly derated per the datasheet curve; at 150°C case, maximum I_F drops to approximately 4.5 A per diode to maintain T_vj ≤ 175°C.

Can Pin 2 and the backside be used simultaneously as cathode connections?

Yes-Pin 2 and the metal backside are internally shorted and form a single common cathode (C) node. Both must be electrically and thermally connected to the same heatsink plane. Using only one connection point increases thermal resistance and risks localized overheating; both points should be soldered or bolted with low-impedance interface material.

Is the device suitable for synchronous rectification topologies?

No-the IDP20C65D2XKSA1 is a unidirectional, non-controllable diode with fixed forward/reverse characteristics. It lacks gate control and cannot be actively turned off like a MOSFET. It is intended for passive rectification in boost, buck, or inverter freewheeling roles-not for synchronous rectification, which requires actively switched devices.

How does the 7.0 nH internal emitter inductance affect layout design?

The 7.0 nH internal emitter inductance-measured 5 mm from the case-must be included in total loop inductance calculations for the diode's anode-to-cathode path. To avoid voltage ringing exceeding V_RRM, keep external PCB traces between A1/A2 and the switch node ≤ 8 mm and use tight copper pours; exceeding 15 nH total loop inductance risks destructive overshoot during 1000 A/µs di/dt events.