Infineon Technologies IDP30C65D2XKSA1

Overview

IDP30C65D2XKSA1 from Infineon Technologies is a 650 V, dual common-cathode emitter-controlled diode (ECD) optimized for continuous conduction mode (CCM) power factor correction (PFC) boost stages. It delivers 15 A per diode at 25 °C, features 1.6 V forward voltage at 15 A and 25 °C, exhibits 31 ns reverse recovery time, and operates up to 175 °C junction temperature in industrial power supplies.

For engineers reviewing the IDP30C65D2XKSA1 datasheet, IDP30C65D2XKSA1 pinout, IDP30C65D2XKSA1 application, or IDP30C65D2XKSA1 equivalent, key selection criteria include reverse recovery charge (0.20 µC), soft switching behavior, low thermal resistance (1.63 K/W j–c), and parallel-ready package design for high-reliability AC–DC front-ends.

Technical Context

This dual-diode ECD integrates two independent 650 V, 15 A diodes sharing a common cathode terminal (Pin 2 + backside), enabling compact interleaved or phase-shifted PFC topologies. Its emitter-controlled architecture provides inherently soft reverse recovery with low di/dt sensitivity and stable VF over temperature.

The device uses a PG-TO220-3 package with isolated anodes (A1 on Pin 1, A2 on Pin 3) and a thermally enhanced metal backside cathode. Thermal resistance junction-to-case is 1.63 K/W per diode, supporting high-power density designs without forced cooling at moderate loads.

Key Specifications

Pinout & Package

Package: PG-TO220-3, through-hole, insulated anode leads, electrically isolated anodes, common cathode on Pin 2 and metal backside.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, dual-diode PFC applications.

Compared with STTH30L06CW and IXYS MDD150-16N1, IDP30C65D2XKSA1 uniquely combines dual-diode integration, 650 V rating matched to 400 VDC bus designs, and sub-35 ns trr-enabling smaller magnetics, lower EMI, and simplified thermal management in space-constrained industrial PFC.

Availability

IDP30C65D2XKSA1 is available at Aetrix Electronics and suitable for industrial power supplies, server front-end converters, and renewable energy inverters requiring stable component supply, JEDEC-qualified reliability, and high-temperature operational continuity.

Supply support for IDP30C65D2XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

IDP30C65D2XKSA1 belongs to Infineon's Emitter Controlled Diode (ECD) product line, engineered specifically for high-efficiency, high-frequency CCM PFC stages where soft recovery, thermal robustness, and layout simplicity are critical.

FAQ

What is the maximum continuous forward current per diode at 100 °C case temperature?

The IDP30C65D2XKSA1 supports 15.0 A continuous forward current per diode at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This rating reflects thermal limits of the PG-TO220-3 package and internal chip design, and must be applied with appropriate heatsinking to maintain T_vj ≤ 175 °C under steady-state conditions.

Is the cathode terminal electrically and thermally connected to the metal backside?

Yes. Pin 2 and the entire metal backside of the PG-TO220-3 package are internally connected to the common cathode. This dual-path connection provides both low-inductance electrical return and efficient heat conduction to the heatsink, critical for maintaining low R_th(j–c) = 1.63 K/W per diode.

How does the reverse recovery charge change from 25 °C to 175 °C junction temperature?

Q_rr increases from 0.20 µC at T_vj = 25 °C to 0.29 µC at T_vj = 175 °C - a 45% rise. This moderate increase is characteristic of emitter-controlled diodes and ensures predictable switching loss growth across the full operating temperature range, unlike conventional FRDs where Q_rr can double.

Can IDP30C65D2XKSA1 be paralleled without external balancing components?

Yes. The matched forward voltage (VF) and reverse recovery characteristics (trr, Qrr) between the two integrated diodes enable stable current sharing under dynamic load conditions. No external ballast resistors or current-sharing inductors are required, provided PCB layout symmetry and thermal coupling are maintained per Infineon's application note AN2015-07.