Infineon Technologies IDP30E65D1XKSA1

Overview

IDP30E65D1XKSA1 from Infineon Technologies is an emitter-controlled rapid-switching diode rated for 650 V repetitive peak reverse voltage and 30 A forward current at 100 °C case temperature, featuring 1.35 V forward voltage at 30 A and 25 °C junction temperature, ultra-fast 64 ns reverse recovery time, and 0.67 µC reverse recovery charge - deployed as boost diodes in PFC stages and freewheeling diodes in industrial motor drives.

For engineers reviewing the IDP30E65D1XKSA1 datasheet, IDP30E65D1XKSA1 pinout, IDP30E65D1XKSA1 application, or IDP30E65D1XKSA1 equivalent, key selection criteria include junction temperature stability up to 175 °C, low Qrr under high di/dt (1000 A/µs), thermal resistance of 1.05 K/W (junction-to-case), and PG-TO220-2-1 package compatibility with standard heatsink mounting.

Technical Context

This emitter-controlled diode uses a proprietary structure that decouples carrier lifetime control from doping profile, enabling simultaneous low VF and ultra-fast soft recovery. Its internal emitter inductance is tightly controlled at 7.0 nH (measured 5 mm from case), minimizing voltage overshoot during turn-off under high di/dt conditions.

The device delivers stable switching performance across –40 °C to +175 °C junction temperature range, with reverse recovery time increasing only to 103 ns and Qrr rising to 1.41 µC at 175 °C - critical for reliable operation in high-temperature industrial inverters and SMPS where thermal derating margins are constrained.

Key Specifications

Pinout & Package

Package: PG-TO220-2-1 - insulated plastic package with 2-pin configuration, single-side metallized backside for direct thermal mounting, RoHS-compliant Pb-free plating, and M3 screw mount compatibility (0.6 Nm torque).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar rapid-switching diode applications.

Compared with STTH30L06D and MBR3060CT, IDP30E65D1XKSA1 uniquely balances 650 V rating, sub-1.4 V forward drop, and sub-70 ns recovery - making it optimal for thermally constrained, high-frequency industrial PFC and inverter freewheeling where both voltage headroom and switching loss matter.

Availability

IDP30E65D1XKSA1 is available at Aetrix Electronics and suitable for AC/DC converters, boost diodes in PFC stages, and freewheeling diodes in motor drives requiring stable component supply, long-term lifecycle support, and traceable industrial-grade sourcing.

Supply support for IDP30E65D1XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDP30E65D1XKSA1 belongs to Infineon's Emitter Controlled Diode Rapid 1 Series - engineered specifically for high-efficiency, high-reliability industrial power conversion where thermal stability and switching consistency are non-negotiable.

FAQ

What is the maximum allowable case temperature for continuous operation?

The IDP30E65D1XKSA1 supports continuous forward current of 30 A at case temperature (T_C) = 100 °C, per datasheet maximum ratings. At T_C = 25 °C, rated current rises to 60 A. Thermal design must ensure junction temperature remains ≤175 °C using R_th(j-c) = 1.05 K/W and appropriate heatsinking.

Does this diode require a gate drive or external control signal?

No - IDP30E65D1XKSA1 is a two-terminal uncontrolled diode. Its emitter-controlled structure is intrinsic to the silicon layout and requires no external bias or gate connection. It operates solely based on applied voltage polarity and current direction, like all standard power diodes.

How does its reverse recovery behavior change at elevated junction temperatures?

At T_vj = 175 °C, t_rr increases to 103 ns and Q_rr rises to 1.41 µC under identical test conditions (V_R = 400 V, I_F = 30 A, dI_F/dt = 1000 A/µs). This predictable degradation is fully characterized and factored into Infineon's recommended derating curves.

Can IDP30E65D1XKSA1 be mounted directly to a heatsink without insulating hardware?

Yes - the PG-TO220-2-1 package features an electrically insulated case (plastic body) with metallized backside designed for direct thermal contact to heatsinks. No insulating washer is required unless system-level isolation mandates creepage/clearance beyond the package's native rating.