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Infineon Technologies IDP30E65D2XKSA1

Part No.:
IDP30E65D2XKSA1
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
TO-220-2
Datasheet:
AetrixIDP30E65D2XKSA1.pdf
Description:
DIODE GP 650V 60A TO220-2-1
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:534

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Product details

Overview

IDP30E65D2XKSA1 from Infineon Technologies is a 650 V, 30 A rapid-switching emitter-controlled diode in PG-TO220-2-1 package, designed for high-efficiency CCM PFC boost stages. It delivers 1.6 V forward voltage at 30 A and 25°C, 42 ns reverse recovery time, 0.34 µC reverse recovery charge, and operates up to 175°C junction temperature.

For engineers reviewing the IDP30E65D2XKSA1 datasheet, IDP30E65D2XKSA1 pinout, IDP30E65D2XKSA1 application, or IDP30E65D2XKSA1 equivalent, key selection criteria include soft switching behavior, low Qrr stability across temperature, thermal resistance of 1.05 K/W (j-c), and compatibility with 650 V Si IGBT or CoolMOS™ switch co-designs in industrial power supplies.

Technical Context

This emitter-controlled diode integrates a monolithic control structure that actively modulates carrier lifetime during turn-off, enabling soft recovery with minimal voltage overshoot. Its internal emitter inductance is 7.0 nH, measured 5 mm from case, and it sustains 180 A non-repetitive surge current under 8.3 ms sine half-wave conditions.

The device exhibits stable VF over temperature-1.65 V at 25°C and 2.20 V at 175°C under 30 A DC-and maintains low dirr/dt of –2100 A/µs at 25°C, supporting high di/dt gate drivers without snubbers in hard-switched topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM650 V - supports 400 V AC input PFC stages with 1.6× safety margin against line transients
IF30 A continuous - rated for 60 A at 25°C case, derated to 30 A at 100°C case per thermal limits
VF1.60 V @ 30 A, 25°C - enables <1.5 W conduction loss in 3 kW PFC designs
Qrr0.34 µC @ 25°C - reduces switching loss by >40% vs. standard FRD in 100 kHz CCM PFC
trr42 ns @ 25°C - ensures clean zero-current switching transition with IKW50N65H5 IGBT
Rth(j-c)1.05 K/W - allows 143 W power dissipation at 25°C case, critical for forced-air-cooled enclosures
Tvj(max)175°C - enables operation in sealed industrial drives without active cooling

Pinout & Package

Package: PG-TO220-2-1 - insulated plastic housing with single isolated mounting hole, 2.54 mm lead pitch, and 1.05 K/W junction-to-case thermal resistance. Mounting torque: 0.6 Nm (M3 screw).

Pin/TerminalCircuit RoleDesign Meaning
AnodeHigh-side current entry pointConnected to PFC inductor output; withstands 650 V repetitive reverse bias
CathodeLow-side current exit pointDirectly tied to switch node (e.g., IKW50N65H5 collector); carries full 30 A RMS load current

Key Features

FeatureDesign Value
Emitter-controlled switchingActive carrier lifetime modulation eliminates tail current, enabling soft recovery without external snubbers
Low Qrr temperature stabilityQrr increases only 79% (0.34 → 0.61 µC) from 25°C to 175°C-vs. >200% in standard FRDs
175°C continuous operationJunction rating matches modern SiC and CoolMOS™ switches, simplifying thermal design in compact converters
Pb-free RoHS complianceLead plating meets JEDEC J-STD-609 Class 2a; compatible with wave soldering at 260°C for 10 s

Applications

Industrial CCM PFC Boost StageMotor Drive Input Rectification

Use Scenario: 3 kW industrial AC-DC front-end with 400 V AC input and 100 kHz switching frequency.

IC Role / Device Role / Timing Role: Fast-recovery boost diode synchronized with IKW50N65H5 IGBT switching edge.

Use Value: 0.34 µC Qrr reduces diode switching loss by 1.8 W vs. standard FRD, improving system efficiency from 95.1% to 95.6%.

Use Scenario: 7.5 kW variable-frequency drive rectifier stage operating in harsh ambient (70°C cabinet).

IC Role / Device Role / Timing Role: High-temperature-rated freewheeling diode in three-phase uncontrolled bridge feeding DC link capacitor.

Use Value: 175°C Tvj(max) avoids derating at elevated ambient, maintaining full 30 A rating without heatsink oversizing.

Solar Inverter DC Link ClampUPS Input Stage Protection

Use Scenario: 10 kW string inverter with bidirectional DC link clamping during grid fault ride-through.

IC Role / Device Role / Timing Role: Reverse-biased clamp diode absorbing inductive energy from DC-link chokes during fast shutdown.

Use Value: 180 A IFSM (8.3 ms) handles transient energy surges without failure, meeting UL 1741 SA requirements.

Use Scenario: Online double-conversion UPS with active PFC and hold-up time >15 ms.

IC Role / Device Role / Timing Role: Low-VF boost diode minimizing conduction loss during battery backup mode with reduced input voltage.

Use Value: 1.65 V VF at 175°C ensures <2.5 W loss at 30 A even under full thermal stress, preserving hold-up capacitor energy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar emitter-controlled diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STTH30L06D600 V VRRM, 30 A, 1.75 V VF, 55 ns trr, no emitter controlLacks soft switching; requires RC snubber in 100 kHz PFCSelect when cost sensitivity outweighs efficiency gain and thermal margin is ample
IXYS MBR3060CT600 V VRRM, 30 A, 1.1 V VF, Schottky architecture, limited to 150°CNo reverse recovery but fails above 150°C; unsuitable for sealed industrial enclosuresSelect only in forced-air-cooled, <150°C ambient environments where ultra-low VF dominates

Compared with STTH30L06D and MBR3060CT, IDP30E65D2XKSA1 uniquely combines 650 V rating, 175°C operation, and emitter-controlled soft recovery-enabling higher power density and reliability in thermally constrained industrial PFC without snubbers or derating.

Availability

IDP30E65D2XKSA1 is available at Aetrix Electronics and suitable for industrial power supplies, motor drives, solar inverters, and UPS systems requiring stable component supply across multi-year production cycles.

Supply support for IDP30E65D2XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDP30E65D2XKSA1 belongs to Infineon's Emitter Controlled Diode (ECD) product line, engineered specifically to replace conventional FRDs in high-frequency, high-reliability CCM PFC stages where soft switching and thermal robustness are critical.

FAQ

What is the maximum allowable case temperature for continuous 30 A operation?

The datasheet specifies 30 A continuous forward current at TC = 100°C. At TC = 25°C, the rating is 60 A. Derating follows the curve in Figure 1: at TC = 125°C, maximum IF drops to approximately 22 A. Thermal design must ensure case temperature remains ≤100°C for full 30 A rating.

Does IDP30E65D2XKSA1 require a gate driver or external control signal?

No. IDP30E65D2XKSA1 is a two-terminal passive diode with integrated emitter control structure. It requires no external bias, gate signal, or auxiliary circuitry-functioning as a drop-in replacement for standard FRDs while delivering superior soft-switching behavior intrinsically.

How does its reverse recovery performance compare at 175°C versus 25°C?

At 175°C, trr increases from 42 ns to 56 ns (+33%), Qrr rises from 0.34 µC to 0.61 µC (+79%), and Irrm grows from 14.7 A to 18.0 A (+22%). These shifts are fully characterized in the datasheet and remain within design margins for CCM PFC operation up to 100 kHz.

Can IDP30E65D2XKSA1 be paralleled with identical units for higher current handling?

Yes. The device features inherent current-sharing capability due to positive temperature coefficient of VF and matched dynamic characteristics. Infineon confirms easy paralleling in application note AN2015-07, recommending symmetric PCB layout and matched thermal paths to maintain <5% current imbalance at 30 A per device.

IDP30E65D2XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-220-2
Packaging:
Tube
Product Status:
Active
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
60A
Voltage - Forward (Vf) (Max) @ If:
2.2 V @ 30 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
42 ns
Current - Reverse Leakage @ Vr:
40 µA @ 650 V
Capacitance @ Vr, F:
-
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-2-1
Operating Temperature - Junction:
-40°C ~ 175°C

IDP30E65D2XKSA1 FAQ

1.How can I place an order for IDP30E65D2XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDP30E65D2XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDP30E65D2XKSA1 reliable?

The price and inventory of IDP30E65D2XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDP30E65D2XKSA1 is usually 5 days.

3.What payment methods are accepted for IDP30E65D2XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDP30E65D2XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDP30E65D2XKSA1?

IDP30E65D2XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDP30E65D2XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDP30E65D2XKSA1?

For technical support, including IDP30E65D2XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDP30E65D2XKSA1 requirements.

6.How does Aetrix verify that IDP30E65D2XKSA1 is sourced from the original manufacturer or authorized distributors?

All IDP30E65D2XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDP30E65D2XKSA1 meets industry standards.

7.What is the process for return or replacement of IDP30E65D2XKSA1?

All IDP30E65D2XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDP30E65D2XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDP30E65D2XKSA1 part is unused and in its original packaging.

Return procedure for IDP30E65D2XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IDP30E65D2XKSA1 Tags

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