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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Infineon Technologies IDP40E65D2XKSA1

Name: IDP40E65D2XKSA1
Brand: Infineon Technologies
SKU: IDP40E65D2XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IDP40E65D2XKSA1

Manufacturer:: Infineon Technologies

Category:: Single Diodes

Package:: TO-220-2

Datasheet:: IDP40E65D2XKSA1.pdf

Description:: DIODE GEN PURP 650V 40A TO220-2

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Product details

Overview

IDP40E65D2XKSA1 from Infineon Technologies is a 650 V, 40 A rapid-switching emitter-controlled diode in PG-TO220-2-1 package, optimized for continuous conduction mode (CCM) power factor correction boost stages. It delivers 1.6 V forward voltage at 40 A and 25 °C, 0.40 µC reverse recovery charge, and operates up to 175 °C junction temperature in industrial power converters.

For engineers reviewing the IDP40E65D2XKSA1 datasheet, IDP40E65D2XKSA1 pinout, IDP40E65D2XKSA1 application, or IDP40E65D2XKSA1 equivalent, key selection criteria include soft switching behavior, low Qrr stability across temperature, thermal resistance of 0.75 K/W (j-c), and compatibility with high-di/dt PFC topologies requiring <80 ns trr at 175 °C.

Technical Context

This emitter-controlled diode uses Infineon's proprietary ECD technology to eliminate minority-carrier storage, enabling fast, soft reverse recovery without tail current. Its internal emitter inductance is fixed at 7.0 nH, measured 5 mm from case, and it sustains 1000 A/µs diF/dt under 400 V reverse bias.

The device is rated for 250 A non-repetitive surge (8.3 ms sine half-wave) and exhibits stable VF over temperature-1.65 V at 25 °C and 2.20 V at 175 °C under 40 A DC-supporting reliable thermal design in compact industrial SMPS layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	650 V - Withstands peak reverse voltage in 400 V AC input PFC stages with margin.
I_F	40 A @ T_C = 100 °C - Continuous forward current rating usable in thermally constrained heatsink designs.
V_F	1.60 V @ 40 A, 25 °C - Low conduction loss enabling >98% CCM PFC efficiency at full load.
Q_rr	0.40 µC @ 25 °C - Minimizes switching loss and EMI in high-frequency (>100 kHz) boost converters.
t_rr	36 ns @ 25 °C, 1000 A/µs - Enables clean zero-current switching transitions in hard- and soft-switched topologies.
T_vjmax	175 °C - Allows operation in sealed enclosures or high-ambient industrial environments without derating.
R_th(j-c)	0.75 K/W - Enables direct mounting to heatsinks with predictable thermal path for transient thermal modeling.

Pinout & Package

Package: PG-TO220-2-1 - Insulated plastic case with single isolation barrier, 2-pin configuration (anode/cathode), screw-mount compatible (M3, 0.6 Nm torque), and wave-solderable (260 °C, 10 s).

Pin/Terminal	Circuit Role	Design Meaning
Anode (Tab)	Main current entry point	Electrically connected to metal tab; requires insulated mounting hardware when referenced to ground.
Cathode (Lead)	Main current exit point	Standard lead-form terminal; connects to boost inductor node and gate driver return path.

Key Features

Feature	Design Value
Emitter-controlled architecture	Eliminates minority-carrier storage, enabling intrinsic soft recovery without snubbers.
Low Q_rr temperature stability	Q_rr increases only 2.85× from 25 °C to 175 °C (0.40 → 1.14 µC), easing thermal-aware control loop design.
High di/dt capability	Sustains 1000 A/µs diF/dt without oscillation or voltage overshoot in fast-switching PFC stages.
Pb-free & RoHS compliant	Meets industrial environmental compliance requirements without compromising solder joint reliability.
Easy paralleling	Uniform dynamic characteristics and low thermal resistance enable direct parallel connection without current-sharing resistors.

Applications

Industrial CCM PFC Boost Stage

Server PSU Front-End Converter

Use Scenario: 3.3 kW telecom rectifier operating at 100 kHz with 230 V AC input and 400 V DC bus.

IC Role / Device Role / Timing Role: Primary boost diode handling 40 A RMS current and absorbing 650 V reverse stress during switch-off.

Use Value: 0.40 µC Q_rr reduces turn-on loss in interleaved IGBT/MOSFET switches by 35% versus standard FREDs.

Use Scenario: Dual-phase 1.5 kW server power supply with active clamp forward topology and digital PFC controller.

IC Role / Device Role / Timing Role: Fast-recovery diode in boost leg, synchronized to 150 kHz PWM with <50 ns timing margin.

Use Value: 36 ns t_rr ensures clean zero-current switching, reducing EMI filter size by 22%.

Motor Drive DC Link Clamp

Renewable Energy Inverter Input Stage

Use Scenario: 7.5 kW HVAC inverter with regenerative braking, requiring bidirectional energy handling and 175 °C ambient operation.

IC Role / Device Role / Timing Role: Clamping diode across DC link capacitor, conducting during motor regeneration pulses.

Use Value: 175 °C T_vjmax and stable VF allow sustained 40 A clamping current without thermal runaway.

Use Scenario: 5 kW solar string inverter front-end with unidirectional boost stage feeding MPPT converter.

IC Role / Device Role / Timing Role: High-reliability boost diode exposed to outdoor temperature cycling (-40 to +85 °C ambient).

Use Value: 0.75 K/W R_th(j-c) enables passive heatsinking with <15 K rise at full load, eliminating fan dependency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar rapid-switching diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STTH60R06DJF	600 V V_RRM, 60 A I_F, 1.75 V V_F, 0.52 µC Q_rr at 25 °C	Higher conduction loss, higher Q_rr; less suitable for >100 kHz PFC	Select if higher current rating required and switching frequency ≤65 kHz.
IXYS MBR4060CT	600 V V_RRM, 40 A I_F, 1.55 V V_F, but 120 ns t_rr, no soft recovery	Tail current causes EMI and cross-conduction risk in synchronous rectification	Select only for low-frequency (<30 kHz), low-EMI-sensitive applications where cost dominates.

Compared with STTH60R06DJF and MBR4060CT, IDP40E65D2XKSA1 provides superior high-frequency PFC performance due to its 36 ns t_rr, soft recovery, and 0.40 µC Q_rr, making it optimal for digitally controlled, >100 kHz industrial converters where efficiency and EMI are critical.

Availability

IDP40E65D2XKSA1 is available at Aetrix Electronics and suitable for industrial power supplies, server PSUs, and renewable energy inverters requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for IDP40E65D2XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in high-voltage silicon and wide-bandgap solutions.

IDP40E65D2XKSA1 belongs to Infineon's Emitter Controlled Diode (ECD) product line, engineered specifically for high-efficiency, high-frequency industrial PFC and DC-link applications demanding soft switching and thermal robustness.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies that continuous operation at 40 A forward current is rated up to T_C = 100 °C. At T_C = 25 °C, the device supports 80 A, but thermal design must ensure junction temperature remains ≤175 °C using the 0.75 K/W R_th(j-c) value and actual heatsink conditions.

Does IDP40E65D2XKSA1 require a gate resistor or external snubber?

No. As an emitter-controlled diode, it has no gate terminal and exhibits intrinsic soft recovery without tail current. External snubbers are unnecessary in properly laid-out PCBs with controlled layout inductance, though a small RC network may be used for EMI filtering in ultra-high-noise environments.

How does Q_rr change with junction temperature and di/dt?

Q_rr increases with temperature: 0.40 µC at 25 °C, 1.14 µC at 175 °C (1000 A/µs). It also rises with lower diF/dt: 0.13 µC at 200 A/µs (25 °C), confirming strong di/dt dependence critical for accurate loss modeling in variable-frequency PFC controllers.

Can IDP40E65D2XKSA1 be paralleled without current-sharing components?

Yes. Its matched dynamic parameters, low thermal resistance (0.75 K/W), and uniform VF vs. temperature curve enable direct parallel connection. Infineon confirms this in the datasheet under "Easy paralleling" and recommends symmetrical layout and equal-length traces to maintain balance.

IDP40E65D2XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-220-2

Packaging:: Tube

Product Status:: Active

Technology:: Standard

Voltage - DC Reverse (Vr) (Max):: 650 V

Current - Average Rectified (Io):: 40A

Voltage - Forward (Vf) (Max) @ If:: 2.3 V @ 40 A

Speed:: Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr):: 75 ns

Current - Reverse Leakage @ Vr:: 40 µA @ 650 V

Capacitance @ Vr, F:: -

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-2

Operating Temperature - Junction:: -40°C ~ 175°C

IDP40E65D2XKSA1 FAQ

1.How can I place an order for IDP40E65D2XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDP40E65D2XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDP40E65D2XKSA1 reliable?

The price and inventory of IDP40E65D2XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDP40E65D2XKSA1 is usually 5 days.

3.What payment methods are accepted for IDP40E65D2XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDP40E65D2XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDP40E65D2XKSA1?

IDP40E65D2XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDP40E65D2XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDP40E65D2XKSA1?

For technical support, including IDP40E65D2XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDP40E65D2XKSA1 requirements.

6.How does Aetrix verify that IDP40E65D2XKSA1 is sourced from the original manufacturer or authorized distributors?

All IDP40E65D2XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDP40E65D2XKSA1 meets industry standards.

7.What is the process for return or replacement of IDP40E65D2XKSA1?

All IDP40E65D2XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDP40E65D2XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDP40E65D2XKSA1 part is unused and in its original packaging.

Return procedure for IDP40E65D2XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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