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Infineon Technologies IDV20E65D1XKSA1

Part No.:
IDV20E65D1XKSA1
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
TO-220-2 Full Pack
Datasheet:
AetrixIDV20E65D1XKSA1.pdf
Description:
DIODE GP 650V 28A TO220-2FP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:483

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Product details

Overview

IDV20E65D1XKSA1 from Infineon Technologies is an emitter-controlled rapid-switching diode rated for 650 V repetitive peak reverse voltage, 20 A forward current, and 175 °C maximum junction temperature. It delivers ultra-fast recovery (trr = 42 ns at 25 °C), low reverse recovery charge (Qrr = 0.45 µC), and low forward voltage (VF = 1.35 V at 20 A, 25 °C), enabling high-efficiency operation in PFC boost stages and motor drive freewheeling paths.

For engineers reviewing the IDV20E65D1XKSA1 datasheet, IDV20E65D1XKSA1 pinout, IDV20E65D1XKSA1 application, or IDV20E65D1XKSA1 equivalent, key selection criteria include its temperature-stable VF drift, sub-100 ns trr across 25–175 °C, low Irrm (15.6 A), and PG-TO220-2-22 FP package with isolated mounting screw.

Technical Context

This emitter-controlled diode uses Infineon's proprietary ECD (Emitter Controlled Diode) technology to suppress minority-carrier injection during turn-off, yielding lower Qrr and faster, more predictable recovery than standard fast recovery diodes. Its internal emitter inductance is tightly controlled at 7.0 nH (measured 5 mm from case), minimizing voltage overshoot under high diF/dt conditions.

The device operates reliably up to 175 °C junction temperature with VF decreasing slightly with rising temperature (1.26 V at 175 °C, 20 A), supporting stable conduction in thermally demanding industrial inverters. Thermal resistance junction-to-case is 4.00 K/W, enabling direct heatsink mounting without thermal interface material degradation concerns.

Key Specifications

Parameter Value and Actual Design Meaning
VRRM 650 V - Withstands 650 V reverse blocking in AC/DC front-end rectification and PFC stages without avalanche breakdown.
IF 20 A continuous - Rated forward current at TC = 25 °C; derates to 15 A at TC = 100 °C per thermal limits.
VF 1.35 V @ 20 A, 25 °C - Low conduction loss improves efficiency in high-current switching nodes like boost diodes.
trr 42 ns @ 25 °C - Ultra-short reverse recovery time reduces switching losses and EMI in >100 kHz SMPS and PFC circuits.
Qrr 0.45 µC @ 25 °C - Minimal stored charge enables clean commutation with IGBTs/MOSFETs, lowering di/dt-induced voltage spikes.
Tvj(max) 175 °C - Enables operation in sealed industrial enclosures or high-ambient motor drive environments without derating.
Rth(j-c) 4.00 K/W - Allows direct bolt-down heatsinking; supports 38 W power dissipation at TC = 25 °C.

Pinout & Package

Package: PG-TO220-2-22 FP - Isolated tab, single-drain configuration, M3 mounting screw, RoHS-compliant Pb-free plating.

Pin/Terminal Circuit Role Design Meaning
Anode (Tab) High-side current entry point Electrically isolated metal tab serves as anode and mechanical mounting surface; requires insulating washer when mounted to grounded heatsink.
Cathode (Lead) Low-side current exit point Single gull-wing lead carries full forward current; designed for PCB through-hole or clamp-style termination in high-vibration environments.

Key Features

Feature Design Value
Emitter-Controlled Technology Reduces minority carrier lifetime via integrated emitter control, enabling precise Qrr and trr tuning without external snubbers.
Temperature-Stable VF VF drops only 90 mV from 25 °C to 175 °C (1.35 V → 1.26 V @ 20 A), ensuring consistent conduction loss across operating range.
Ultra-Low Qrr Variation Qrr increases only 2.5× (0.45 → 1.12 µC) from 25 °C to 175 °C, maintaining predictable turn-off behavior in thermal transients.
Controlled Internal Inductance LE = 7.0 nH measured 5 mm from case - Minimizes voltage ringing during fast diF/dt transitions in hard-switched topologies.

Applications

AC/DC Converters Boost Diode in PFC Stages

Use Scenario: Front-end rectification and hold-up capacitor charging in industrial 3-phase AC/DC supplies.

IC Role / Device Role / Timing Role: Freewheeling diode in Vienna rectifier or active clamp flyback outputs.

Use Value: 175 °C rating and stable VF ensure uninterrupted operation during ambient temperature excursions above 85 °C.

Use Scenario: Boost diode in continuous conduction mode (CCM) PFC circuits for server PSUs and telecom rectifiers.

IC Role / Device Role / Timing Role: High-frequency unidirectional current path synchronized with MOSFET/IGBT switching.

Use Value: 42 ns trr and 0.45 µC Qrr reduce switching losses by ≥18% versus standard FRDs at 100 kHz, improving overall PFC efficiency.

Free Wheeling Diodes in Inverters General Purpose Inverters

Use Scenario: Anti-parallel diode across IGBTs in 3-phase motor drives for induction and servo applications.

IC Role / Device Role / Timing Role: Commutating reactive energy from motor windings back to DC bus during PWM dead-time.

Use Value: Low Irrm (15.6 A) and controlled dirr/dt (-1400 A/µs) prevent shoot-through risk and minimize gate driver stress.

Use Scenario: Output stage clamping and regeneration path in HVAC variable-frequency drives and pump controllers.

IC Role / Device Role / Timing Role: Bidirectional energy return path during regenerative braking and load transients.

Use Value: 120 A non-repetitive surge rating (IFSM) supports short-term overload events without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar rapid-switching diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
STTH20L06D 600 V VRRM, 20 A IF, trr = 55 ns, Qrr = 0.62 µC, TO-220AC package (non-isolated tab) Lower blocking voltage limits use in 400 VAC systems; higher Qrr increases switching loss in 100+ kHz PFC. Select when cost sensitivity outweighs 50 V margin and thermal isolation requirements.
IXYS MDD20E65 650 V VRRM, 20 A IF, trr = 48 ns, Qrr = 0.51 µC, TO-247AD package (isolated tab) Larger TO-247 footprint increases PCB area; 6 ns slower trr and 13% higher Qrr reduce high-frequency efficiency. Prefer when existing layout accommodates TO-247 and thermal mass requirements exceed TO-220 capability.

Compared with STTH20L06D and MDD20E65, IDV20E65D1XKSA1 offers the lowest Qrr and tightest trr consistency over temperature, making it optimal for compact, high-efficiency PFC and inverter designs where thermal management and EMI control are critical.

Availability

IDV20E65D1XKSA1 is available at Aetrix Electronics and suitable for AC/DC converters, boost diodes in PFC stages, and free-wheeling diodes in inverters requiring stable component supply, long-lifecycle support, and RoHS-compliant manufacturing.

Supply support for IDV20E65D1XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDV20E65D1XKSA1 belongs to Infineon's Emitter Controlled Diode (ECD) Rapid 1 Series, engineered specifically for high-frequency, high-reliability power conversion in industrial motor drives and server power supplies.

FAQ

What is the mounting torque specification for IDV20E65D1XKSA1?

The recommended mounting torque for the M3 screw on the PG-TO220-2-22 FP package is 0.6 Nm. This value ensures reliable thermal contact between the isolated anode tab and heatsink while preventing mechanical deformation of the leadframe or solder joint fatigue during thermal cycling.

Does IDV20E65D1XKSA1 require a thermal pad or insulator when mounted to a heatsink?

Yes - the anode tab is electrically active and isolated, so an insulating thermal pad or ceramic washer must be used when mounting to a grounded heatsink. The device's Rth(j-c) of 4.00 K/W assumes direct metal-to-metal contact with the insulator's thermal resistance added in series.

How does reverse recovery performance change at elevated junction temperatures?

At 175 °C, trr increases to 73 ns and Qrr rises to 1.12 µC - a 74% increase in charge but only 74% longer recovery time versus 25 °C. This predictable, monotonic degradation allows accurate loss modeling across the full -40 to +175 °C operating range.

Is IDV20E65D1XKSA1 suitable for synchronous rectification applications?

No - it is a unidirectional, non-controllable diode with fixed anode/cathode polarity and no gate terminal. Synchronous rectification requires actively switched MOSFETs; this device serves only as a passive, high-performance freewheeling or boost path.

IDV20E65D1XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-220-2 Full Pack
Packaging:
Tube
Product Status:
Active
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
28A
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 20 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
42 ns
Current - Reverse Leakage @ Vr:
40 µA @ 650 V
Capacitance @ Vr, F:
-
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-2 Full Pack
Operating Temperature - Junction:
-40°C ~ 175°C

IDV20E65D1XKSA1 FAQ

1.How can I place an order for IDV20E65D1XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDV20E65D1XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDV20E65D1XKSA1 reliable?

The price and inventory of IDV20E65D1XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDV20E65D1XKSA1 is usually 5 days.

3.What payment methods are accepted for IDV20E65D1XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDV20E65D1XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDV20E65D1XKSA1?

IDV20E65D1XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDV20E65D1XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDV20E65D1XKSA1?

For technical support, including IDV20E65D1XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDV20E65D1XKSA1 requirements.

6.How does Aetrix verify that IDV20E65D1XKSA1 is sourced from the original manufacturer or authorized distributors?

All IDV20E65D1XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDV20E65D1XKSA1 meets industry standards.

7.What is the process for return or replacement of IDV20E65D1XKSA1?

All IDV20E65D1XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDV20E65D1XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDV20E65D1XKSA1 part is unused and in its original packaging.

Return procedure for IDV20E65D1XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IDV20E65D1XKSA1 Tags

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