Infineon Technologies IDW10G120C5BFKSA1

Overview

IDW10G120C5BFKSA1 from Infineon Technologies is a 5th Generation CoolSiC™ 1200 V silicon carbide Schottky diode in PG-TO247-3 package, rated for 10 A continuous forward current per leg at TC = 135°C, with 28 nC total capacitive charge at 800 V and 150°C, and 175°C maximum junction temperature. It serves as a high-efficiency freewheeling or boost diode in high-voltage DC/DC converters and three-phase PFC stages.

For engineers reviewing the IDW10G120C5BFKSA1 datasheet, IDW10G120C5BFKSA1 pinout, IDW10G120C5BFKSA1 application, or IDW10G120C5BFKSA1 equivalent, key selection criteria include its zero reverse recovery, 1200 V blocking capability, tight VF distribution (1.4–1.65 V @ 10 A, 25°C), dv/dt ruggedness (150 V/ns), and dual-anode configuration enabling interleaved topologies.

Technical Context

This SiC Schottky diode operates without minority-carrier injection, eliminating reverse recovery charge (Qrr = 0) and associated switching losses. Its forward voltage remains stable across temperature-1.7 V max at 10 A and 150°C-enabling consistent conduction loss in thermally demanding environments like solar inverter boost stages.

The device integrates two independent anode terminals (Pin 1 and Pin 3) sharing a common cathode (Pin 2 + backside), supporting parallel-leg operation or interleaved converter designs. Thermal resistance is specified at 1.6 K/W (typ.) junction-to-case per leg, enabling high-power density layouts with direct heatsink mounting.

Key Specifications

Pinout & Package

Package: PG-TO247-3 (standard through-hole power package with isolated tab; cathode connected to metal tab and Pin 2).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC Schottky diode applications.

Compared with C3D10120A and STPSC10H12D3, IDW10G120C5BFKSA1 provides unique dual-anode flexibility, tighter VF matching, and superior thermal resistance-critical for high-density, interleaved, or high-reliability industrial power systems where layout symmetry and thermal predictability are design priorities.

Availability

IDW10G120C5BFKSA1 is available at Aetrix Electronics and suitable for solar inverters, uninterruptible power supplies, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from Infineon's qualified production line.

Supply support for IDW10G120C5BFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to the CoolSiC™ 5th Generation family, engineered specifically for high-efficiency, high-frequency, high-voltage power conversion systems where zero-recovery behavior, thermal stability, and ruggedness are mandatory.

FAQ

What is the maximum allowable case temperature for continuous 10 A operation?

The datasheet specifies 10 A continuous forward current per leg at TC = 135°C with D = 1 duty cycle and Tj ≤ 175°C. Operation above 135°C requires derating per Figure 2; at TC = 156°C, rated current drops to 8 A per leg. Thermal design must ensure Rth(j-c) × Ploss + TC ≤ 175°C.

Can Pin 1 and Pin 3 be used simultaneously in parallel without external balancing components?

Yes-both anodes share identical electrical characteristics (VF match ±5%, Rth(j-c) matched within 5%). Parallel operation is supported without external ballast resistors when PCB layout symmetry and thermal coupling are maintained. The dual-anode structure is validated for this use case in Infineon's application note AN2019-07.

Is the metal tab (backside) electrically isolated from the leads?

No-the metal tab is internally connected to Pin 2 (cathode) and forms part of the cathode terminal. It must be mounted to a heatsink using an electrically insulating but thermally conductive interface (e.g., ceramic washer or silicone pad) if the heatsink is grounded or at a different potential.

Does this diode require gate driving or external control signals?

No-IDW10G120C5BFKSA1 is a passive uncontrolled diode with no gate terminal. It conducts when anode voltage exceeds cathode voltage by ≥ VF, and blocks when reverse biased. No driver circuitry, biasing, or timing control is needed-its behavior is fully defined by applied voltage and temperature.