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Infineon Technologies IDW12G65C5XKSA1

Part No.:
IDW12G65C5XKSA1
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
TO-247-3
Datasheet:
AetrixIDW12G65C5XKSA1.pdf
Description:
DIODE SIL CARB 650V 12A TO247-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:268

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Product details

Overview

IDW12G65C5XKSA1 from Infineon is a 650 V, 12 A silicon carbide Schottky diode in TO-247-3 package, featuring zero reverse recovery charge, 1.5–2.1 V forward voltage (12 A, 25–150°C), 18 nC capacitive charge at 400 V, and 175°C maximum junction temperature. It replaces silicon fast recovery diodes in high-frequency PFC stages of solar inverters and UPS systems.

For engineers reviewing the IDW12G65C5XKSA1 datasheet, IDW12G65C5XKSA1 pinout, IDW12G65C5XKSA1 application, or IDW12G65C5XKSA1 equivalent, key selection criteria include its SiC-specific thermal stability, absence of reverse recovery loss, 650 V blocking capability, surge current rating up to 71 A (10 ms), and compatibility with CoolMOS™ 650 V switching devices.

Technical Context

This 5th-generation thinQ!™ SiC Schottky diode uses ultra-thin wafer technology to reduce Qc × Vf figure of merit, enabling higher efficiency across full load range. Its unipolar conduction eliminates minority-carrier storage, resulting in temperature-independent switching behavior and no reverse recovery tail current.

The device is rated for 650 V repetitive peak reverse voltage (VRRM), supports 100 V/ns dv/dt ruggedness, and delivers 76 W power dissipation at TC = 25°C with RthJC ≤ 2.0 K/W. It is qualified per JEDEC standards for industrial and renewable energy applications.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM650 V - Sustains full-rated DC bus voltage in 650 V-class PFC and inverter DC links without avalanche stress
IF (TC < 125°C)12 A - Continuous forward current rating usable in thermally constrained enclosures with active cooling
VF (12 A, 25°C)1.5–1.7 V - Low conduction loss enables >98% PFC stage efficiency at light-to-full load
Qc (VR = 400 V)18 nC - Minimal capacitive charge reduces turn-on switching loss in hard-switched topologies
Tj max175°C - Enables operation in high-ambient environments (e.g., rooftop solar inverters) without derating
RthJC1.5–2.0 K/W - Predictable thermal path allows accurate junction temperature estimation using case sensor
IR (650 V, 150°C)2.4–1350 µA - Low leakage preserves system standby efficiency and avoids thermal runaway in parallel strings

Pinout & Package

Supplied in PG-TO247-3 package (case code D1265C5), with isolated metal tab (pin 1: n.c., pin 2: cathode, pin 3: anode). Mounting torque: 50–70 N·cm on M3/M4 screws.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1No connectionElectrically isolated terminal; used only for mechanical mounting and heat sinking
Pin 2CathodeMain high-side output node; connects to switching node in boost PFC or inverter leg
Pin 3AnodeMain low-side return path; ties to DC bus negative or neutral point in split-rail designs

Key Features

FeatureDesign Value
Zero reverse recovery charge (Qrr = 0)Eliminates switching loss and EMI associated with diode tail current in hard-switched converters
Temperature-independent VF driftForward voltage increases only ~0.3 mV/°C - enables stable current sharing in parallel configurations
High surge current capability (71 A, 10 ms)Withstands inrush and fault currents in grid-tied inverters without bond wire fusing
Pb-free, RoHS-compliant platingMeets global environmental compliance requirements for industrial and solar equipment shipments
Optimized for 650 V CoolMOS™ pairingTiming and loss characteristics align with Infineon's 650 V superjunction MOSFET families for seamless system design

Applications

Photovoltaic String InvertersIndustrial Uninterruptible Power Supplies

Use Scenario: DC-link freewheeling path in three-phase two-level inverters handling 5–10 kW string output.

IC Role / Device Role / Timing Role: SiC Schottky diode providing bidirectional current path during PWM dead-time and reactive power flow.

Use Value: Zero Qrr prevents shoot-through risk and reduces heatsink size by 35% vs. Si FRD alternatives at 16 kHz switching.

Use Scenario: Output rectification and battery charging path in double-conversion online UPS with 10–20 kVA rating.

IC Role / Device Role / Timing Role: High-reliability output diode operating continuously at 125°C ambient with 100% duty cycle.

Use Value: 175°C Tj rating and <1 µA IR at 600 V/125°C ensure >10-year field life without thermal derating.

Server Rack PFC ModulesEV Charging Station Front-End Rectifiers

Use Scenario: Boost diode in interleaved 3.3 kW telecom-grade PFC with 100 kHz switching frequency.

IC Role / Device Role / Timing Role: Fast-recovery-free diode enabling ZVS-assisted soft switching in critical conduction mode (CrCM).

Use Value: 18 nC Qc cuts turn-on loss by 62% versus 600 V SiC JBS diodes, improving full-load efficiency to 98.4%.

Use Scenario: AC/DC front-end rectifier in liquid-cooled 150 kW DC fast chargers with 1000 V DC bus.

IC Role / Device Role / Timing Role: 650 V SiC diode used in NPC or T-type inverter input stage for bidirectional grid interaction.

Use Value: 100 V/ns dv/dt ruggedness withstands rapid voltage transients from IGBT/SiC MOSFET switching edges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
C3D10065A (Wolfspeed)Same 650 V/10 A rating but TO-247-2 package; VF = 1.8 V @ 10 A, 25°C; Qc = 15 nCLacks isolated tab (no Pin 1); lower IF rating limits use in 12 A continuous designsSelect when board layout requires 2-pin footprint and thermal interface uses soldered tab only
STPSC12065DLF (STMicroelectronics)650 V/12 A, TO-247-3, VF = 1.7 V @ 12 A, 25°C; Qc = 22 nC; RthJC = 2.2 K/WHigher Qc increases switching loss in >50 kHz designs; slightly higher thermal resistancePrefer where cost sensitivity outweighs 12% higher EC loss at 400 V and proven ST automotive qualification path

Compared with C3D10065A and STPSC12065DLF, IDW12G65C5XKSA1 offers the lowest Qc × Vf figure of merit among 650 V/12 A SiC diodes, best-in-class thermal resistance, and integrated n.c. mounting pin for mechanically robust heatsink attachment in high-vibration environments.

Availability

IDW12G65C5XKSA1 is available at Aetrix Electronics and suitable for photovoltaic inverters, uninterruptible power supplies, and server rack PFC modules requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from Infineon's certified wafer fab.

Supply support for IDW12G65C5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensors for industrial, automotive, and renewable energy markets.

IDW12G65C5XKSA1 belongs to Infineon's thinQ!™ 5th-generation SiC Schottky diode product line, engineered specifically to maximize efficiency and power density in 650 V hard-switched and resonant converter topologies.

FAQ

Is IDW12G65C5XKSA1 pin-compatible with standard TO-247-3 silicon diodes?

Yes - it uses the same PG-TO247-3 mechanical outline and mounting hole pattern as legacy silicon diodes. However, Pin 1 is n.c. (not internally connected), unlike many Si diodes where Pin 1 is anode or cathode. PCB layout must isolate Pin 1 from circuit nodes.

What is the maximum allowable case temperature for continuous 12 A operation?

The datasheet specifies IF = 12 A only for TC < 125°C. At TC = 125°C, junction temperature reaches 175°C (Tj = TC + Ptot × RthJC ≈ 125 + 42 × 1.75 ≈ 175°C), which is the absolute maximum. Derating is required above TC = 125°C.

Does IDW12G65C5XKSA1 require gate drive or external control signals?

No - it is a passive two-terminal device with no gate or control input. It conducts forward current when anode voltage exceeds cathode voltage by ≥ VF, and blocks reverse voltage up to 650 V. No driver circuitry or biasing is needed.

Can IDW12G65C5XKSA1 be paralleled for higher current capacity?

Yes - its positive temperature coefficient of VF (≈ +0.3 mV/°C) enables inherent current sharing. Use matched layout symmetry, identical thermal paths, and Kelvin-sense connections to minimize imbalance. Avoid mixing with Si diodes due to differing thermal coefficients.

IDW12G65C5XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolSiC™+
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
Technology:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
12A
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 12 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
190 µA @ 650 V
Capacitance @ Vr, F:
360pF @ 1V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3
Operating Temperature - Junction:
-55°C ~ 175°C

IDW12G65C5XKSA1 FAQ

1.How can I place an order for IDW12G65C5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDW12G65C5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDW12G65C5XKSA1 reliable?

The price and inventory of IDW12G65C5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDW12G65C5XKSA1 is usually 5 days.

3.What payment methods are accepted for IDW12G65C5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDW12G65C5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDW12G65C5XKSA1?

IDW12G65C5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDW12G65C5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDW12G65C5XKSA1?

For technical support, including IDW12G65C5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDW12G65C5XKSA1 requirements.

6.How does Aetrix verify that IDW12G65C5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IDW12G65C5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDW12G65C5XKSA1 meets industry standards.

7.What is the process for return or replacement of IDW12G65C5XKSA1?

All IDW12G65C5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDW12G65C5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDW12G65C5XKSA1 part is unused and in its original packaging.

Return procedure for IDW12G65C5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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