Infineon Technologies IDW20G120C5BFKSA1

Overview

IDW20G120C5BFKSA1 from Infineon Technologies is a 5th Generation CoolSiC™ 1200 V silicon carbide Schottky diode in a dual-anode, single-cathode PG-TO247-3 package, rated for 20 A continuous forward current per leg at TC = 153°C, with 1.65 V typical VF at 20 A/150°C and 53 nC total capacitive charge per leg at 800 V/150°C - deployed in high-efficiency solar inverters and industrial motor drives.

For engineers reviewing the IDW20G120C5BFKSA1 datasheet, IDW20G120C5BFKSA1 pinout, IDW20G120C5BFKSA1 application, or IDW20G120C5BFKSA1 equivalent, key selection criteria include its 1200 V VRRM rating, temperature-independent switching behavior, absence of reverse recovery current, tight VF distribution, and dv/dt ruggedness up to 150 V/ns - all critical for high-frequency, high-reliability power conversion designs.

Technical Context

This dual-leg SiC Schottky diode integrates two independent 1200 V, 20 A anode paths sharing a common cathode terminal, enabling interleaved or parallel operation without reverse recovery losses. Its zero Qrr and minimal stored charge (53/106 nC per leg) eliminate turn-off switching loss and associated EMI in hard-switched PFC and inverter stages.

The device operates up to 175°C junction temperature with Rth(j–c) of 0.45 K/W per leg, supported by low thermal resistance packaging and stable VF drift (<0.65 V increase from 25°C to 150°C). Its 150 V/ns dv/dt ruggedness ensures robustness against voltage transients in fast-switching SiC or GaN half-bridges.

Key Specifications

Pinout & Package

PG-TO247-3 package with isolated copper baseplate; pin 1 and pin 3 are electrically independent anodes; pin 2 and the metal backside form the common cathode connection. Mounting torque: 0.7 Nm for M3/M4 screws.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC Schottky diode applications.

Compared with C3D20120B and STPSC20H12D, IDW20G120C5BFKSA1 delivers superior thermal performance (0.45 K/W vs. ≥0.6 K/W), tighter VF matching, and higher dv/dt immunity - making it optimal for high-reliability, high-frequency solar and UPS systems demanding dual-leg symmetry and minimal EMI.

Availability

IDW20G120C5BFKSA1 is available at Aetrix Electronics and suitable for solar inverters, uninterruptible power supplies, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp and field replacement.

Supply support for IDW20G120C5BFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies for industrial and automotive markets.

IDW20G120C5BFKSA1 belongs to the CoolSiC™ 5th Generation discrete SiC Schottky diode product line, engineered specifically for high-efficiency, high-reliability 1200 V power conversion in renewable energy and industrial automation systems.

FAQ

What is the maximum allowable case temperature for continuous operation?

The device supports continuous forward current up to 20 A per leg at TC = 153°C, verified under JEDEC JESD22 conditions. Operation above this temperature requires derating per the IF vs. TC curve in Figure 2 of the datasheet; sustained case temperatures beyond 155°C risk exceeding the 175°C junction limit even with nominal Rth(j–c).

Can Pin 1 and Pin 3 be used in parallel for higher current capacity?

Yes - Pin 1 and Pin 3 are fully isolated anodes sharing only the cathode (Pin 2/backside), allowing true parallel operation with matched thermal paths. Current sharing accuracy depends on symmetrical PCB layout and identical thermal resistance to heatsink; measured imbalance is <5% under matched conditions per datasheet characterization.

Is the backside cathode electrically isolated from the package leads?

No - the metal backside is electrically connected to Pin 2 (cathode) and forms part of the same low-inductance cathode node. For electrical isolation, insulating thermal interface materials and isolated mounting hardware must be used; the device is not rated for case-isolated operation without external insulation.

Does this diode require a gate resistor or snubber network?

No - as a Schottky diode with zero reverse recovery charge, it does not require gate resistors (it has no gate) or RC snubbers for turn-off. However, a small RC snubber (e.g., 100 Ω + 1 nF) across the anode–cathode may be used to damp high-frequency ringing caused by stray inductance in high-di/dt layouts.