Infineon Technologies IDW20G65C5BXKSA1

Overview

IDW20G65C5BXKSA1 from Infineon Technologies is a 650 V, dual-leg silicon carbide (SiC) Schottky diode in TO-247-3 package, rated for 10 A continuous forward current per leg at TC < 125°C, with zero reverse recovery charge and temperature-independent switching. It delivers 15 nC total capacitive charge at VR = 400 V and operates reliably up to 175°C junction temperature, enabling high-efficiency PFC stages in industrial solar inverters.

For engineers reviewing the IDW20G65C5BXKSA1 datasheet, IDW20G65C5BXKSA1 pinout, IDW20G65C5BXKSA1 application, or IDW20G65C5BXKSA1 equivalent, this device supports high-frequency, high-temperature switching in 650 V power conversion systems where Si diodes fail due to recovery losses and thermal derating.

Technical Context

This dual-leg SiC Schottky diode integrates two independent 650 V/10 A diode elements in a single TO-247-3 package, sharing a common cathode terminal (Pin 2). Its zero Qrr eliminates turn-off switching loss and associated EMI, while its VF of 1.5–1.7 V at 10 A and 25°C enables low conduction loss across wide load ranges.

The device exhibits stable reverse leakage (≤1250 µA at 650 V, 150°C) and rugged dv/dt capability of 100 V/ns, validated under avalanche stress for 10 ms. Thermal resistance RthJC is 1.8–2.3 K/W, supporting high-power-density designs with minimal heatsinking.

Key Specifications

Pinout & Package

Package: PG-TO247-3 (standard through-hole, isolated mounting flange, M3 screw torque 50–70 Ncm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D20065D and STPSC20065DLF, IDW20G65C5BXKSA1 offers integrated dual-leg topology with lower VF and matched thermal paths, reducing component count and improving thermal uniformity in interleaved high-power converters.

Availability

IDW20G65C5BXKSA1 is available at Aetrix Electronics and suitable for solar inverter boost stages, industrial SMPS PFC circuits, and uninterruptible power supply rectifiers requiring stable component supply and long-term lifecycle support.

Supply support for IDW20G65C5BXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in SiC and GaN technologies.

IDW20G65C5BXKSA1 belongs to Infineon's 5th Generation thinQ!™ SiC Schottky diode product line, engineered specifically to complement 650 V CoolMOS™ power transistors in high-efficiency, high-power-density AC/DC and DC/DC conversion systems.

FAQ

Is IDW20G65C5BXKSA1 pin-compatible with earlier Infineon SiC diodes like IDW20G65C5?

No. IDW20G65C5BXKSA1 uses the standard PG-TO247-3 footprint with Pin 1 (Anode 1), Pin 2 (Common Cathode), and Pin 3 (Anode 2). Earlier IDW20G65C5 variants used different marking and thermal pad configurations; mechanical and electrical pin mapping must be verified against Infineon's Rev. 2.0 datasheet.

What is the maximum allowable case temperature for continuous operation?

The maximum continuous case temperature is 125°C, as specified in Table 3 (Maximum Ratings) for IF = 10 A per leg. Exceeding this requires derating per the IF = f(TC) curve in Figure 7; at TC = 150°C, maximum IF drops to ~7.5 A per leg to maintain Tj ≤ 175°C.

Does IDW20G65C5BXKSA1 require a gate resistor or snubber network?

No. As a Schottky diode with no minority-carrier storage, it has no gate and requires no snubber for reverse recovery. However, a small RC snubber (e.g., 10 Ω + 100 pF) across each anode–cathode may be used to damp high-frequency ringing caused by stray inductance in high-di/dt layouts.

Can IDW20G65C5BXKSA1 be paralleled with other SiC diodes for higher current?

Yes - but only with matched devices from the same wafer lot. The dual-leg structure is internally balanced, and external paralleling requires identical thermal mounting, symmetric PCB traces, and individual current-sensing to avoid thermal runaway; Infineon recommends using the dual-leg configuration itself instead of external paralleling where possible.