Infineon Technologies IDW20G65C5XKSA1

Overview

IDW20G65C5XKSA1 from Infineon is a 650 V, 20 A silicon carbide Schottky diode in TO-247-3 package, featuring zero reverse recovery charge, 1.5–1.7 V forward voltage at 20 A/25°C, 29 nC capacitive charge at 400 V, and rated for continuous operation up to 175°C junction temperature. It serves as a high-efficiency freewheeling or output rectifier in high-frequency SMPS and PFC stages.

For engineers reviewing the IDW20G65C5XKSA1 datasheet, IDW20G65C5XKSA1 pinout, IDW20G65C5XKSA1 application, or IDW20G65C5XKSA1 equivalent, key selection criteria include its SiC-specific thermal stability, absence of reverse recovery loss, low Qc × Vf figure of merit, and compatibility with 650 V CoolMOS™ half-bridges in high-density power converters.

Technical Context

This 5th-generation thinQ!™ SiC Schottky diode uses ultra-thin wafer technology to reduce on-state resistance and capacitive charge while maintaining 650 V blocking capability. Its unipolar conduction eliminates minority-carrier storage, enabling true zero-recovery switching across –55°C to 175°C.

The device exhibits temperature-independent switching behavior and supports dv/dt ruggedness up to 100 V/ns under full-rated reverse voltage. Its RthJC of 1.0–1.3 K/W enables high-power dissipation (112 W at TC = 25°C) without forced cooling in industrial-grade designs.

Key Specifications

Pinout & Package

Package: PG-TO247-3 (standard through-hole power package with isolated tab, 3-pin configuration, RoHS-compliant lead plating).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D20065D and STPSC20065DL3, IDW20G65C5XKSA1 offers superior thermal resistance (RthJC ≤1.3 K/W), JEDEC-qualified avalanche robustness, and optimized integration with Infineon's 650 V CoolMOS™ families-making it ideal for tightly coupled high-frequency power stages requiring minimal layout rework.

Availability

IDW20G65C5XKSA1 is available at Aetrix Electronics and suitable for switch mode power supplies, power factor correction circuits, and solar inverters requiring stable component supply and long-lifecycle support.

Supply support for IDW20G65C5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDW20G65C5XKSA1 belongs to the thinQ!™ 5th-generation SiC Schottky diode product line, engineered specifically to complement 650 V CoolMOS™ power transistors in high-efficiency, high-power-density AC-DC and DC-DC conversion systems.

FAQ

Is IDW20G65C5XKSA1 suitable for paralleling multiple devices?

Yes, IDW20G65C5XKSA1 exhibits positive temperature coefficient of forward voltage, enabling natural current sharing when paralleled. Layout symmetry and matched trace inductance are required; typical derating is 15% per additional device beyond two units. Thermal coupling must be minimized to avoid localized hot spots.

What is the maximum recommended mounting torque for the TO-247-3 package?

The maximum mounting torque for M3 or M3.5 screws is 60 Ncm, as specified in the datasheet. Exceeding this value risks cracking the ceramic substrate or damaging the die attach. Use calibrated torque drivers and apply even pressure across all mounting points to ensure uniform thermal contact.

Does IDW20G65C5XKSA1 require a gate resistor or snubber network?

No-IDW20G65C5XKSA1 is a diode with no gate terminal and does not require gate resistors. Snubbers are unnecessary due to zero reverse recovery charge and inherent dv/dt ruggedness up to 100 V/ns. However, layout parasitics should still be minimized to suppress high-frequency ringing from stray inductance.

Can IDW20G65C5XKSA1 replace silicon fast recovery diodes in existing designs?

Yes, with layout verification. Its lower VF and zero Qrr reduce losses, but higher di/dt may expose parasitic oscillations previously masked by Si diode recovery. Verify PCB trace inductance, adjust gate drive timing if used in synchronous rectification, and confirm thermal margin given higher peak junction temperatures during transient loads.