Infineon Technologies IDW20S120FKSA1

Overview

IDW20S120FKSA1 from Infineon is a 1200 V, 20 A (per device) silicon carbide Schottky diode in TO-247-3 package, designed for high-efficiency power conversion with zero reverse recovery, 1.5–2.4 V forward voltage at 20 A, and thermal operation up to 175 °C junction temperature. It serves as a freewheeling or boost diode in high-frequency CCM PFC stages, solar inverters, and industrial motor drives.

For engineers reviewing the IDW20S120FKSA1 datasheet, IDW20S120FKSA1 pinout, IDW20S120FKSA1 application, or IDW20S120FKSA1 equivalent, key selection criteria include its 1200 V blocking rating, 36–72 nC capacitive charge at 400 V, 1.3–0.65 K/W junction-to-case thermal resistance, surge current capability of 53/106 A, and RoHS-compliant Pb-free plating.

Technical Context

This SiC Schottky diode replaces conventional silicon fast recovery diodes in high-voltage, high-frequency switching applications. Its unipolar conduction eliminates minority-carrier storage, resulting in no reverse recovery loss and temperature-independent switching behavior across –55 °C to 175 °C.

The device operates with low forward voltage (1.5 V typ. @ 25 °C, 2.4 V @ 150 °C), minimal reverse leakage (≤1000 µA @ 1200 V, 150 °C), and low total capacitive charge (36–72 nC @ 400 V), enabling reduced EMI and higher system efficiency in hard-switched topologies.

Key Specifications

Pinout & Package

Package: PG-TO247-3 (standard through-hole, isolated tab, screw-mount compatible). Thermal pad electrically connected to Pin 2 (cathode).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D20120D and STPSC20H12D, IDW20S120FKSA1 offers superior thermal symmetry via Pin 3, lowest Q_C/V_F trade-off, and JEDEC-qualified ruggedness-making it optimal for high-reliability, high-frequency, and thermally constrained designs.

Availability

IDW20S120FKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, solar string inverters, uninterruptible power supplies, and server SMPS requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.

Supply support for IDW20S120FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with leadership in silicon carbide and gallium nitride technologies.

IDW20S120FKSA1 belongs to Infineon's thinQ!™ SiC Schottky Diode family, engineered specifically for high-efficiency, high-reliability power conversion in renewable energy, industrial automation, and datacenter infrastructure.

FAQ

Is IDW20S120FKSA1 pin-compatible with standard TO-247-3 silicon diodes?

Yes, IDW20S120FKSA1 uses the standard PG-TO247-3 footprint and mechanical outline, including M3.5 screw mounting and 60 Ncm torque specification. However, its Pin 3 is a functional anode-not a dummy pin-so PCB layout must route both anode terminals to maintain current balance in dual-leg configurations.

What is the maximum recommended case temperature for continuous operation?

The datasheet specifies continuous forward current ratings up to T_C = 140 °C. Operation beyond this requires derating per the IF vs. TC curves in Figure 8; at 150 °C case temperature, maximum continuous current drops to ~16 A per device to maintain T_j ≤ 175 °C with R_thJC = 0.65 K/W.

Does IDW20S120FKSA1 require a gate resistor or snubber network?

No-IDW20S120FKSA1 is a passive diode with no gate. Unlike SiC MOSFETs, it does not require gate resistors. Snubbers are unnecessary due to zero reverse recovery; however, a small RC snubber (e.g., 100 Ω + 100 pF) may be used across the diode to damp high-frequency ringing caused by stray inductance in high-di/dt layouts.

Can IDW20S120FKSA1 be paralleled with other SiC diodes for higher current handling?

Yes-its positive temperature coefficient of V_F enables natural current sharing. For reliable paralleling, match devices from the same wafer lot, use symmetrical PCB traces with identical length and width, and connect both anodes (Pins 1 and 3) and cathode (Pin 2) with low-inductance, Kelvin-style routing to minimize dynamic imbalance.