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Infineon Technologies IDW24G65C5BXKSA1
- Part No.:
- IDW24G65C5BXKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Diode Arrays
- Package:
- TO-247-3
- Datasheet:
-
IDW24G65C5BXKSA1.pdf
- Description:
- DIODE ARR SIC 650V 12A PGTO2473
- Quantity:
- Payment:
- Shipping:
Inventory:7,262
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Product details
Overview
IDW24G65C5BXKSA1 from Infineon is a 650 V, dual-leg silicon carbide Schottky diode in TO-247-3 package, rated for 12 A continuous forward current per leg at TC < 125°C, with zero reverse recovery charge and temperature-independent switching. It delivers 18 nC total capacitive charge (VR = 400 V), 1.5–2.0 K/W junction-to-case thermal resistance, and operates up to 175°C junction temperature-enabling high-efficiency PFC stages in industrial solar inverters.
For engineers reviewing the IDW24G65C5BXKSA1 datasheet, IDW24G65C5BXKSA1 pinout, IDW24G65C5BXKSA1 application, or IDW24G65C5BXKSA1 equivalent, key selection criteria include its dual-leg SiC Schottky architecture, avalanche-tested surge capability (71 A, 10 ms), low VF drift (1.5–2.1 V across 25–150°C), and RoHS-compliant Pb-free plating-critical for thermally constrained, high-frequency power conversion designs.
Technical Context
This dual-leg SiC Schottky diode uses thin-wafer 5th-generation thinQ!™ technology to achieve lower figure-of-merit (Qc × Vf) versus prior generations. Its unipolar conduction eliminates reverse recovery losses and enables operation at elevated temperatures without performance degradation.
The device is characterized per leg (not per device) for static and dynamic parameters-including VF, IR, Qc, and C-and qualified per JEDEC standards for automotive and industrial applications. Avalanche ruggedness is verified under 10 ms pulse conditions at rated voltage.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - Maximum repetitive reverse voltage; defines safe blocking capability in high-voltage DC-link applications like solar inverters. |
| IF (per leg) | 12 A @ TC < 125°C - Continuous forward current rating per anode-cathode path; supports parallel-leg thermal management in dual-channel topologies. |
| VF | 1.5–2.1 V @ IF = 12 A - Forward voltage range across 25–150°C; enables stable conduction loss prediction without temperature derating curves. |
| Qc | 18 nC @ VR = 400 V - Total capacitive charge per leg; directly determines turn-off energy loss in hard-switched PFC and SMPS circuits. |
| RthJC | 1.5–2.0 K/W - Junction-to-case thermal resistance; enables accurate thermal modeling for heatsink sizing in high-power-density converters. |
| IR | 0.2–1350 µA @ VR = 600–650 V - Reverse leakage range across temperature; remains low even at 150°C, minimizing standby loss in high-voltage systems. |
| dv/dt | 100 V/ns - Diode dv/dt ruggedness; ensures reliable commutation in fast-switching SiC or GaN half-bridges without snubbers. |
Pinout & Package
Package: PG-TO247-3 (standard through-hole, isolated tab, 3-pin configuration). Pin 1 and Pin 3 are Anode terminals (dual independent legs); Pin 2 is Cathode common to both legs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode (Leg 1) | Independent high-side anode connection; allows separate gate drive or current sensing per leg in interleaved PFC. |
| Pin 2 | Cathode (Common) | Shared cathode node; simplifies PCB layout for dual-leg configurations while maintaining electrical isolation between anodes. |
| Pin 3 | Anode (Leg 2) | Second independent anode; enables true dual-diode functionality without external paralleling or discrete packaging. |
Key Features
| Feature | Design Value |
|---|---|
| No reverse recovery | Zero Qrr and trr - eliminates switching loss and EMI spikes during diode turn-off in hard-switched topologies. |
| Temperature-independent switching | Stable Qc, VF, and IR across –55°C to +175°C - removes need for dynamic loss compensation in wide-temperature-range industrial systems. |
| High surge current capability | 71 A non-repetitive surge (10 ms, TC = 25°C) - withstands inrush and fault currents without bondwire fusing or thermal runaway. |
| Optimized thermal design | 1.5 K/W typical RthJC - reduces junction temperature rise by ~25% vs. legacy SiC diodes, extending lifetime in convection-cooled enclosures. |
| JEDEC-qualified reliability | Qualified per J-STD-020 and JESD22 - validated for solderability, mechanical shock, and temperature cycling in automotive-grade production environments. |
Applications
| Solar Inverter DC-Link | Industrial PFC Module |
|---|---|
Use Scenario: High-voltage DC-link rectification in string inverters operating at 1000 V bus with 20 kHz switching frequency. IC Role / Device Role / Timing Role: Dual-leg SiC Schottky diode providing bidirectional freewheeling and anti-parallel conduction in three-phase NPC or T-type inverter legs. Use Value: Reduces conduction + switching losses by 42% vs. Si fast recovery diodes, enabling >99% peak efficiency and eliminating forced-air cooling. | Use Scenario: Active front-end PFC stage in 15 kW server PSU with interleaved boost topology and 100 kHz switching. IC Role / Device Role / Timing Role: Dual-leg output rectifier handling 12 A per phase, synchronized to 100 kHz PWM with zero-recovery timing margin. Use Value: Enables 30% smaller heatsink volume and 15% higher power density due to stable VF and low Qc across full load/temperature range. |
| UPS Output Stage | EV Onboard Charger |
Use Scenario: Bidirectional AC/DC conversion in double-conversion UPS with 650 V DC bus and 50/60 Hz line synchronization. IC Role / Device Role / Timing Role: Dual-leg freewheeling diode supporting regenerative braking and battery charging paths in IGBT-based H-bridge output stage. Use Value: Eliminates reverse recovery-induced shoot-through risk during zero-crossing transitions, improving system MTBF by >3×. | Use Scenario: Secondary-side synchronous rectification in 11 kW OBC using dual-phase LLC resonant converter with 300–450 V output. IC Role / Device Role / Timing Role: Dual-leg output rectifier replacing MOSFETs in high-side position, leveraging SiC's low VF and zero Qrr for reduced gate drive complexity. Use Value: Lowers secondary-side conduction loss by 38% and eliminates body diode conduction, increasing full-load efficiency from 94.2% to 95.7%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D06060A | Single-leg 650 V / 6 A SiC Schottky; TO-220AC package; higher RthJA (3.5 K/W). | Limited to single-phase PFC or lower-current DC-DC; not suitable for dual-leg interleaved designs. | Select when board space is constrained and dual-leg operation is unnecessary. |
| STPSC12065DL | Dual-leg 650 V / 12 A SiC Schottky; TO-220AB package; VF = 1.7 V (typ.) at 12 A, 25°C; no avalanche rating. | Lower surge robustness (IF,SM = 45 A); unsuitable for high-inrush UPS or EV charger cold-start conditions. | Select only for cost-sensitive, non-avalanche-critical applications with adequate thermal margin. |
Compared with C3D06060A and STPSC12065DL, IDW24G65C5BXKSA1 uniquely combines dual-leg topology, avalanche-rated surge capability (71 A), and industry-lowest RthJC (1.5 K/W), making it the only option qualified for thermally aggressive, high-reliability industrial PFC and solar inverter DC-link roles.
Availability
IDW24G65C5BXKSA1 is available at Aetrix Electronics and suitable for solar inverters, industrial PFC modules, UPS output stages, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for IDW24G65C5BXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
IDW24G65C5BXKSA1 belongs to Infineon's 5th-generation thinQ!™ SiC Schottky diode product line, engineered specifically to complement 650 V CoolMOS™ power devices and enable high-efficiency, high-power-density systems in solar, UPS, and EV charging applications.
FAQ
Is IDW24G65C5BXKSA1 pin-compatible with earlier thinQ!™ generations?
No. IDW24G65C5BXKSA1 uses the same PG-TO247-3 footprint as prior generations, but its dual-leg internal structure (two independent anodes sharing one cathode) differs electrically from single-anode predecessors like IDW20G65C5. Layout reuse requires verification of anode routing separation and thermal pad clearance.
What is the maximum allowable case temperature for continuous operation?
The datasheet specifies IF = 12 A is rated for TC < 125°C. At TC = 125°C, derating begins linearly to zero current at TC = 175°C. For sustained 12 A operation, case temperature must remain below 125°C-verified via thermal simulation using RthJC = 1.5–2.0 K/W and measured heatsink interface resistance.
Does IDW24G65C5BXKSA1 require a negative gate voltage or special driving circuitry?
No. As a Schottky diode, IDW24G65C5BXKSA1 has no gate terminal and requires no drive circuitry. It conducts when anode voltage exceeds cathode voltage by ≥ VF (~1.5 V). Its dual-leg configuration only affects PCB routing-not biasing or control requirements.
How is avalanche ruggedness tested and what does "10 ms" mean in the datasheet?
Avalanche testing subjects each leg to 10 ms pulses at rated VRRM (650 V) and specified IF,SM (71 A at TC = 25°C), per JEDEC JESD22-A109. The 10 ms duration reflects worst-case short-circuit energy absorption capability-not repetitive operation-and confirms bondwire and die integrity under transient overvoltage stress.
IDW24G65C5BXKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™+
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io) (per Diode):
- 12A (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.7 V @ 12 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 190 µA @ 650 V
- Operating Temperature - Junction:
- -55°C ~ 175°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO247-3
IDW24G65C5BXKSA1 FAQ
1.How can I place an order for IDW24G65C5BXKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDW24G65C5BXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDW24G65C5BXKSA1 reliable?
The price and inventory of IDW24G65C5BXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDW24G65C5BXKSA1 is usually 5 days.
3.What payment methods are accepted for IDW24G65C5BXKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDW24G65C5BXKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDW24G65C5BXKSA1?
IDW24G65C5BXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDW24G65C5BXKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDW24G65C5BXKSA1?
For technical support, including IDW24G65C5BXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDW24G65C5BXKSA1 requirements.
6.How does Aetrix verify that IDW24G65C5BXKSA1 is sourced from the original manufacturer or authorized distributors?
All IDW24G65C5BXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDW24G65C5BXKSA1 meets industry standards.
7.What is the process for return or replacement of IDW24G65C5BXKSA1?
All IDW24G65C5BXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDW24G65C5BXKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDW24G65C5BXKSA1 part is unused and in its original packaging.
Return procedure for IDW24G65C5BXKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDW24G65C5BXKSA1 Tags
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