Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IDW30C65D2XKSA1

Part No.:
IDW30C65D2XKSA1
Manufacturer:
Infineon Technologies
Category:
Diode Arrays
Package:
TO-247-3
Datasheet:
AetrixIDW30C65D2XKSA1.pdf
Description:
DIODE ARR GP 650V 15A TO247-3-1
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:204

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IDW30C65D2XKSA1 from Infineon Technologies is an emitter-controlled diode (ECD) with rapid switching, dual-anode/common-cathode configuration, rated for 650 V VRRM, 30 A total forward current (15 A per leg), 1.6 V forward voltage at 15 A and 25°C, and 175°C maximum junction temperature - optimized for continuous conduction mode (CCM) power factor correction boost stages in industrial AC-DC supplies.

For engineers reviewing the IDW30C65D2XKSA1 datasheet, IDW30C65D2XKSA1 pinout, IDW30C65D2XKSA1 application, or IDW30C65D2XKSA1 equivalent, key selection criteria include reverse recovery charge (Qrr = 0.12–0.37 µC), soft switching behavior, low di/dt sensitivity, thermal resistance (Rth(j–c) = 1.75 K/W), and TO-247-3 package compatibility with high-power heatsinking.

Technical Context

This emitter-controlled diode integrates two independent fast-recovery diode legs sharing a common cathode terminal, enabling interleaved or parallel boost operation without external current-sharing components. Its ECD architecture delivers stable VF over temperature and reduced Qrr dispersion versus conventional silicon diodes.

Switching performance is characterized under controlled inductive-load conditions (VR = 400 V, IF = 15 A, diF/dt = 200–1000 A/µs), with trr ≤ 51 ns and dirr/dt up to –6400 A/µs. The device supports operation up to 175°C junction temperature and exhibits low internal emitter inductance (LE = 13 nH).

Key Specifications

Parameter Value and Actual Design Meaning
VRRM 650 V - blocks line transients and DC bus spikes in 400 V AC-input PFC stages
IF (per leg) 15 A continuous - supports 1–2 kW CCM boost converters with derating at TC > 25°C
VF @ 15 A, 25°C 1.60 V - reduces conduction loss by ~15% vs. standard ultrafast diodes at same current
Qrr (typ.) 0.12–0.37 µC - minimizes switching loss and EMI in high-frequency (>100 kHz) PFC designs
Rth(j–c) 1.75 K/W - enables direct mounting to heatsink with predictable thermal margin up to 175°C Tvj
trr 32–51 ns - ensures clean turn-off with minimal tail current in hard-switched boost topologies
Tvj(max) 175°C - allows sustained operation in enclosed industrial enclosures without forced air

Pinout & Package

Package: PG-TO247-3 (standard through-hole power package with isolated tab, RoHS-compliant lead plating). Backside metallization serves as cathode connection.

Pin/Terminal Circuit Role Design Meaning
Pin 1 Anode 1 (A1) Independent anode for first diode leg; enables dual-phase or redundant boost path routing
Pin 2 Cathode (C) Common cathode node shared by both legs; electrically tied to backside metal for low-inductance return
Pin 3 Anode 2 (A2) Independent anode for second diode leg; supports symmetrical layout and balanced thermal distribution

Key Features

Feature Design Value
Emitter-controlled topology Reduces Qrr variation across temperature and current, improving system reliability in wide-operating-range PFC
Soft reverse recovery Low dir/dt (≤ –6400 A/µs) suppresses voltage overshoot and snubber stress in high-di/dt boost switches
175°C junction rating Enables compact thermal design without derating in ambient temperatures up to 85°C with proper heatsinking
Easy paralleling capability Matched VF and Qrr between legs eliminates need for ballast resistors in dual-leg configurations
Pb-free & RoHS compliant Meets industrial environmental compliance requirements without compromising thermal or electrical performance

Applications

Industrial AC-DC Power Supplies Server & Telecom Rectifiers

Use Scenario: 3.3 kW CCM boost PFC stage in 3-phase rectifier front-end with 96% efficiency target.

IC Role / Device Role / Timing Role: Fast-recovery boost diode providing low-loss unidirectional current path during switch off-time.

Use Value: Qrr of 0.21 µC at 125°C cuts switching loss by 22% versus legacy 600 V ultrafast diodes, directly improving full-load efficiency.

Use Scenario: Dual-phase interleaved PFC in 1U telecom rectifier operating at 200 kHz switching frequency.

IC Role / Device Role / Timing Role: Dual-anode common-cathode diode enabling phase-shifted conduction to reduce input/output ripple.

Use Value: Matched trr (32 ns) and VF between legs ensures balanced current sharing and eliminates inter-phase circulating current.

Renewable Energy Inverters Motor Drive Front-Ends

Use Scenario: Boost stage in solar string inverter DC-DC converter handling 1000 V DC input with wide ambient range (–25°C to +60°C).

IC Role / Device Role / Timing Role: High-voltage, high-temperature boost diode maintaining stable conduction under variable irradiance and thermal cycling.

Use Value: Stable VF (1.65 V at 175°C) and low Qrr drift ensure consistent efficiency across operating temperature extremes.

Use Scenario: Regenerative braking energy recovery circuit in HVAC inverter with 400 V DC bus and 150°C heatsink temperature.

IC Role / Device Role / Timing Role: Bidirectional energy clamp diode conducting regenerated current into DC link during motor deceleration.

Use Value: 175°C Tvj rating and Rth(j–c) = 1.75 K/W allow direct mounting to motor drive heatsink without thermal interface degradation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar emitter-controlled diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDW30C65D1XKSA1 Same die, single-anode variant (TO-247-2); no common-cathode dual-leg configuration Suitable only for single-phase PFC; lacks interleaving capability and easy paralleling Select when board space or cost constraints eliminate need for dual-anode layout flexibility
STTH30L06CW 600 V, 30 A dual common-cathode ultrafast diode; higher Qrr (0.85 µC) and VF (1.85 V) Higher conduction and switching losses; requires larger heatsink and snubber in >100 kHz designs Acceptable for lower-frequency (<65 kHz), cost-sensitive industrial SMPS where efficiency is secondary

Compared with IDW30C65D1XKSA1, the IDW30C65D2XKSA1 enables phase-interleaved PFC with matched dynamics; versus STTH30L06CW, it delivers 45% lower Qrr and 13% lower VF, directly reducing thermal load and EMI filter size in high-density power systems.

Availability

IDW30C65D2XKSA1 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server rectifiers, and renewable energy inverters requiring stable component supply, long-lifecycle support, and JEDEC-qualified reliability.

Supply support for IDW30C65D2XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

IDW30C65D2XKSA1 belongs to Infineon's Emitter Controlled Diode (ECD) Rapid series, engineered specifically for high-efficiency, high-reliability CCM PFC stages in industrial and telecom power systems where thermal stability and switching consistency are critical.

FAQ

What is the maximum recommended case temperature for continuous operation?

The datasheet specifies a maximum junction temperature of 175°C and provides power dissipation curves showing 43 W at TC = 100°C. For reliable long-term operation, Infineon recommends limiting case temperature to ≤ 100°C when operating at full 30 A total current, ensuring sufficient thermal margin against transient overload and aging effects.

Can IDW30C65D2XKSA1 be used in parallel with another identical device?

No - IDW30C65D2XKSA1 already integrates two matched diode legs in one package with common cathode; paralleling multiple units introduces thermal imbalance and current-sharing risk due to package-level thermal coupling differences. Instead, use its dual-leg structure for interleaving or redundancy within a single footprint.

Is the backside metal electrically isolated from the leads?

No - the backside metallization is electrically connected to Pin 2 (cathode) and forms part of the cathode terminal. It must be mounted to a heatsink with appropriate electrical isolation (e.g., mica washer or ceramic pad) if the heatsink is not at cathode potential, as confirmed in the PG-TO247-3 mechanical drawing and thermal test conditions.

Does Qrr increase significantly at elevated temperature?

Yes - Qrr rises from 0.12 µC at 25°C to 0.37 µC at 175°C under identical test conditions (VR = 400 V, IF = 15 A, diF/dt = 1000 A/µs), representing a 208% increase. This must be accounted for in worst-case loss calculations and snubber sizing for high-ambient-temperature deployments.

IDW30C65D2XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
Rapid 2
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
Diode Configuration:
1 Pair Common Cathode
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io) (per Diode):
15A
Voltage - Forward (Vf) (Max) @ If:
2.2 V @ 15 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
32 ns
Current - Reverse Leakage @ Vr:
40 µA @ 650 V
Operating Temperature - Junction:
-40°C ~ 175°C
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3-1

IDW30C65D2XKSA1 FAQ

1.How can I place an order for IDW30C65D2XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDW30C65D2XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDW30C65D2XKSA1 reliable?

The price and inventory of IDW30C65D2XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDW30C65D2XKSA1 is usually 5 days.

3.What payment methods are accepted for IDW30C65D2XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDW30C65D2XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDW30C65D2XKSA1?

IDW30C65D2XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDW30C65D2XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDW30C65D2XKSA1?

For technical support, including IDW30C65D2XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDW30C65D2XKSA1 requirements.

6.How does Aetrix verify that IDW30C65D2XKSA1 is sourced from the original manufacturer or authorized distributors?

All IDW30C65D2XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDW30C65D2XKSA1 meets industry standards.

7.What is the process for return or replacement of IDW30C65D2XKSA1?

All IDW30C65D2XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDW30C65D2XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDW30C65D2XKSA1 part is unused and in its original packaging.

Return procedure for IDW30C65D2XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IDW30C65D2XKSA1 Tags

  • IDW30C65D2XKSA1
  • IDW30C65D2XKSA1 PDF
  • IDW30C65D2XKSA1 Datasheet
  • IDW30C65D2XKSA1 Specifications
  • IDW30C65D2XKSA1 Images
  • Infineon Technologies
  • Infineon Technologies IDW30C65D2XKSA1
  • Buy IDW30C65D2XKSA1
  • IDW30C65D2XKSA1 Price
  • IDW30C65D2XKSA1 Distributor
  • IDW30C65D2XKSA1 Supplier
  • IDW30C65D2XKSA1 Wholesale
Related Products
BAV99-7-F
BAV99-7-F

Diodes Incorporated

BAT54C-7-F
BAT54C-7-F

Diodes Incorporated

BAV99,215
BAV99,215

Nexperia USA Inc.

BAT54SLT1G
BAT54SLT1G

onsemi

BAV70LT1G
BAV70LT1G

onsemi

BAT54CLT1G
BAT54CLT1G

onsemi

BAT54S-7-F
BAT54S-7-F

Diodes Incorporated

BAV99LT1G
BAV99LT1G

onsemi

BAT54S,215
BAT54S,215

Nexperia USA Inc.

BAS40-04LT1G
BAS40-04LT1G

onsemi

MMBD1503-TP
MMBD1503-TP

Micro Commercial Co

BAV99WT1G
BAV99WT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER