Infineon Technologies IDW30G120C5BFKSA1

Overview

IDW30G120C5BFKSA1 from Infineon Technologies is a 5th Generation CoolSiC™ 1200 V silicon carbide Schottky diode in PG-TO247-3 package, rated for 30 A continuous forward current per leg at TC = 150°C, with 1.65 V typical VF at 30 A and 150°C, zero reverse recovery charge, and 175°C maximum junction temperature - deployed in high-efficiency solar inverters and industrial motor drives.

For engineers reviewing the IDW30G120C5BFKSA1 datasheet, IDW30G120C5BFKSA1 pinout, IDW30G120C5BFKSA1 application, or IDW30G120C5BFKSA1 equivalent, key selection criteria include its 1200 V VRRM rating, dual-anode configuration enabling interleaved PFC stages, dv/dt ruggedness of 150 V/ns, and tight VF distribution critical for parallel operation in high-power converters.

Technical Context

This SiC Schottky diode operates as a unipolar majority-carrier device with no minority-carrier storage, eliminating reverse recovery losses and enabling hard-switched operation up to 100 kHz in three-phase PFC and inverter legs. Its thermal resistance Rth(j–c) is 0.35 K/W per leg, supporting high power density designs with minimal heatsink mass.

The dual-anode (Pin 1 & Pin 3), shared-cathode (Pin 2 + backside) topology allows independent control of two current paths within a single TO-247-3 outline, reducing PCB layout area and parasitic inductance versus discrete dual-diode solutions - validated under JEDEC JESD22-A108 stress conditions.

Key Specifications

Pinout & Package

PG-TO247-3 package with isolated copper baseplate; anode terminals electrically separated, cathode common to both legs and backside metal tab for low-inductance thermal and electrical return path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC Schottky diode applications.

Compared with C3D03060E and STPSC30H12D2, IDW30G120C5BFKSA1 uniquely delivers dual-anode integration, lower VF, and tighter parametric spread - making it optimal for space-constrained, high-efficiency 1200 V interleaved PFC and inverter applications where thermal and EMI performance are critical.

Availability

IDW30G120C5BFKSA1 is available at Aetrix Electronics and suitable for solar inverters, industrial motor drives, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing for Class 1000 cleanroom assembly.

Supply support for IDW30G120C5BFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

IDW30G120C5BFKSA1 belongs to the CoolSiC™ 5th Generation family, engineered specifically for high-efficiency, high-power-density industrial power conversion systems operating at 1200 V and beyond.

FAQ

What is the maximum continuous forward current per leg at TC = 135°C?

The IDW30G120C5BFKSA1 supports 40 A per leg at TC = 135°C with D = 1 duty cycle, as specified in the "Maximum ratings" table of Rev. 2.2 datasheet. This rating assumes Rth(j–c) = 0.35 K/W per leg and proper mounting to a thermally optimized heatsink. Derating applies above 135°C case temperature.

Is the backside metal electrically isolated from the package leads?

No - the backside metal is electrically connected to Pin 2 (cathode) and forms part of the cathode terminal. It must be mounted using electrically insulating thermal interface material and hardware to prevent short circuits. The isolation voltage between anode pins and backside is rated per JEDEC JESD22-A114.

Can Pin 1 and Pin 3 be paralleled to increase current handling?

No - Pin 1 and Pin 3 are separate anodes intended for independent circuit paths (e.g., interleaved phases). Paralleling them violates the device's internal layout and thermal design, risking current imbalance and localized overheating. Each leg is rated for 30 A independently at TC = 150°C.

Does this diode require a gate resistor or snubber network?

No - as a Schottky diode with no reverse recovery, IDW30G120C5BFKSA1 does not require snubbers or gate resistors. However, a small RC snubber (e.g., 10 Ω + 1 nF) across the diode may be used to damp high-frequency ringing caused by stray inductance in high-di/dt layouts, especially in hard-switched topologies.