Infineon Technologies IDW30G65C5XKSA1

Overview

IDW30G65C5XKSA1 from Infineon Technologies is a 650 V, 30 A silicon carbide Schottky diode in PG-TO247-3 package, featuring zero reverse recovery charge, 1.5–1.7 V forward voltage at 30 A and 25°C, 42 nC capacitive charge at VR = 400 V, and operation up to 175°C junction temperature. It serves as a high-efficiency freewheeling or output rectifier in high-frequency power conversion stages.

For engineers reviewing the IDW30G65C5XKSA1 datasheet, IDW30G65C5XKSA1 pinout, IDW30G65C5XKSA1 application, or IDW30G65C5XKSA1 equivalent, key selection criteria include its SiC-based zero-QRR behavior, thermal resistance of 0.8 K/W (junction-to-case), surge current rating of 165 A (10 ms, TC = 25°C), and RoHS-compliant Pb-free plating.

Technical Context

This 5th-generation thinQ!™ SiC Schottky diode uses optimized thin-wafer technology to reduce Qc × Vf figure of merit, enabling higher efficiency across full load range compared to prior generations. Its unipolar conduction eliminates minority-carrier storage, resulting in temperature-independent switching and no forward/reverse recovery transients.

The device is rated for repetitive peak reverse voltage of 650 V and exhibits dv/dt ruggedness up to 100 V/ns under VR = 0–480 V. Its low RthJC (0.8 K/W typ.) supports high-power-density thermal management in compact SMPS and solar inverter designs.

Key Specifications

Pinout & Package

Package: PG-TO247-3 (standard through-hole power package with isolated tab, screw-mount compatible, M3/M4 torque spec 50–70 Ncm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D03065E and STPSC30065DL, IDW30G65C5XKSA1 offers superior thermal resistance (0.8 K/W), integrated n.c. pin for noise isolation, and highest surge current rating-making it optimal for mission-critical, high-reliability power systems requiring long-term thermal stability.

Availability

IDW30G65C5XKSA1 is available at Aetrix Electronics and suitable for switch mode power supplies, solar inverters, and uninterruptible power supplies requiring stable component supply, long-lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for IDW30G65C5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

IDW30G65C5XKSA1 belongs to Infineon's 5th-generation thinQ!™ SiC Schottky diode product line, engineered specifically to complement 650 V CoolMOS™ power transistors in high-efficiency, high-power-density AC-DC and DC-DC conversion systems.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IDW30G65C5XKSA1 has a maximum junction temperature rating of 175°C, validated per JEDEC standards. Continuous operation at this limit requires maintaining case temperature ≤115°C per the IF rating curve, with thermal design ensuring RthJC × Pdiss + TC ≤ 175°C. Derating applies above 115°C case temperature.

Does this diode require a gate resistor or snubber network?

No. As a unipolar Schottky diode, IDW30G65C5XKSA1 has no gate and exhibits zero reverse recovery, eliminating need for snubbers or damping resistors. However, a small RC snubber (e.g., 10 Ω + 100 pF) across anode–cathode may be used to suppress high-frequency ringing caused by stray inductance in high-di/dt layouts.

Can Pin 1 be grounded or left floating in PCB layout?

Pin 1 is explicitly designated "n.c." (no connection) and must remain electrically unconnected-neither grounded nor tied to any net. Floating is acceptable, but grounding introduces risk of unintended current paths or mechanical stress on the leadframe; layout guidelines require clearance and no copper pour under Pin 1.

How does the 42 nC capacitive charge impact EMI in a 100 kHz PFC design?

At 100 kHz, the 42 nC Qc contributes to high di/dt-induced displacement current (i = Qc × f × 2), generating common-mode noise. Measured data shows peak EMI reduction of 8–10 dB over Si FRDs due to absence of reverse recovery edge; however, layout optimization (minimizing loop area, symmetric routing) remains critical to meet CISPR-22 Class B limits.