Infineon Technologies IDW32G65C5BXKSA1

Overview

IDW32G65C5BXKSA1 from Infineon is a 650 V, dual-leg silicon carbide (SiC) Schottky diode in TO-247-3 package, rated for 16 A continuous forward current per leg at TC < 120°C, with zero reverse recovery charge and temperature-independent switching. It delivers 23 nC total capacitive charge at VR = 400 V and operates reliably up to 175°C junction temperature-enabling high-efficiency PFC stages in industrial solar inverters.

For engineers reviewing the IDW32G65C5BXKSA1 datasheet, IDW32G65C5BXKSA1 pinout, IDW32G65C5BXKSA1 application, or IDW32G65C5BXKSA1 equivalent, key selection criteria include its dual-leg 650 V SiC Schottky architecture, avalanche-tested surge robustness (95 A @ 10 ms), low VF (1.5–1.8 V @ 16 A), and thermal resistance RthJC = 1.2–1.6 K/W-critical for high-power-density SMPS and UPS designs.

Technical Context

This dual-leg SiC Schottky diode uses thin-wafer technology and optimized anode-cathode geometry to achieve a figure of merit (Qc × Vf) lower than prior generations. Its zero reverse recovery eliminates commutation losses during hard-switching transitions in boost PFC and inverter freewheeling paths.

The device is qualified per JEDEC standards for automotive and industrial applications, with breakdown voltage tested at 35 mA and dv/dt ruggedness rated at 100 V/ns under VR = 0–480 V-ensuring reliable operation in fast-switching 650 V CoolMOS™-based topologies.

Key Specifications

Pinout & Package

Package: PG-TO247-3 (standard through-hole, isolated tab, 3-terminal configuration). Pin 1 and Pin 3 are anodes (A), Pin 2 is common cathode (C), enabling dual independent SiC Schottky legs sharing one cathode terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D06060A and STPSC2006D, IDW32G65C5BXKSA1 offers superior thermal performance (RthJC ≤1.6 K/W), lowest Qc in its class (23 nC), and tighter VF consistency across temperature-making it optimal for high-power, high-frequency, and thermally constrained applications like solar inverters and server PSUs.

Availability

IDW32G65C5BXKSA1 is available at Aetrix Electronics and suitable for solar inverter DC-AC stages, industrial UPS rectifier/inverter modules, and EV onboard charger PFC circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IDW32G65C5BXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDW32G65C5BXKSA1 belongs to Infineon's 5th-generation thinQ!™ SiC Schottky diode product line-designed specifically to complement 650 V CoolMOS™ power devices in high-efficiency, high-power-density AC-DC and DC-AC conversion systems.

FAQ

What is the maximum junction temperature and how is it validated?

The maximum junction temperature is 175°C, validated per JEDEC JESD22-A108 through extended high-temperature operating life (HTOL) testing at 175°C for 1000 hours with electrical monitoring. Thermal characterization confirms RthJC = 1.2–1.6 K/W and stable VF drift < ±0.1 V across the full temperature range.

Is IDW32G65C5BXKSA1 suitable for hard-switched LLC resonant converters?

Yes-it is qualified for hard-switched operation with dv/dt = 100 V/ns and avalanche-tested for 10 ms at 95 A. Its zero reverse recovery prevents voltage overshoot during dead-time commutation, and its low Qc minimizes capacitive turn-on loss-making it suitable for primary-side synchronous rectification in high-frequency LLC designs up to 1 MHz.

How does the dual-leg TO-247-3 configuration impact PCB layout?

The dual-anode (Pins 1 & 3) and common-cathode (Pin 2) configuration enables symmetrical, low-inductance routing for interleaved or dual-phase topologies. Layout must maintain equal trace length and impedance between both anodes and use a solid copper pour under the isolated tab for optimal thermal transfer-reducing thermal gradient between legs to <5°C at full load.

Does this diode require a negative gate drive or special biasing?

No-IDW32G65C5BXKSA1 is a passive SiC Schottky diode with no gate terminal. It requires no biasing, gate drive, or control circuitry. Its operation depends solely on forward voltage polarity and magnitude; no external circuitry is needed beyond standard snubbing for voltage ringing suppression in ultra-fast switching applications.