Infineon Technologies IDW32G65C5BXKSA2

Overview

IDW32G65C5BXKSA2 from Infineon is a 650 V, dual-leg silicon carbide (SiC) Schottky diode in TO-247-3 package, rated for 16 A continuous forward current per leg at TC < 120°C, with zero reverse recovery charge and temperature-independent switching. It delivers 23 nC total capacitive charge at VR = 400 V and operates reliably up to 175°C junction temperature, enabling high-efficiency PFC stages in industrial solar inverters.

For engineers reviewing the IDW32G65C5BXKSA2 datasheet, IDW32G65C5BXKSA2 pinout, IDW32G65C5BXKSA2 application, or IDW32G65C5BXKSA2 equivalent, key selection criteria include its 650 V VRRM rating, dual-leg thermal isolation, avalanche-tested surge robustness (95 A @ 10 ms), and low Qc × Vf figure of merit optimized for high-frequency, high-power-density SMPS designs.

Technical Context

This dual-leg SiC Schottky diode integrates two independent 650 V/16 A diode elements in a single TO-247-3 package, sharing only the case (Pin 2) as common cathode. Each leg is individually avalanche-rated per JESD22 and tested at 35 mA for breakdown verification.

Its static behavior is defined by a 1.5–1.7 V forward voltage at 16 A and 25°C, rising to 1.8–2.1 V at 150°C, while reverse leakage remains ≤200 µA at 650 V/25°C and ≤1400 µA at 650 V/150°C - confirming stable high-temperature blocking performance.

Key Specifications

Pinout & Package

Package: PG-TO247-3 (standard through-hole, isolated tab, Pin 2 = common cathode).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D06060A and SS12065B, IDW32G65C5BXKSA2 uniquely delivers dual-leg integration, lowest Qc × Vf, and shared cathode thermal path-enabling compact, high-reliability PFC designs without paralleling or layout compromise.

Availability

IDW32G65C5BXKSA2 is available at Aetrix Electronics and suitable for solar inverters, industrial UPS systems, and server power supply PFC modules requiring stable component supply, long-lifecycle assurance, and JEDEC-qualified reliability.

Supply support for IDW32G65C5BXKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDW32G65C5BXKSA2 belongs to Infineon's 5th-generation thinQ!™ SiC Schottky diode product line, engineered specifically to complement 650 V CoolMOS™ power stages and enable ultra-high-efficiency, high-power-density PFC and inverter topologies.

FAQ

Is IDW32G65C5BXKSA2 pin-compatible with earlier thinQ!™ generations?

No. While sharing the TO-247-3 footprint, IDW32G65C5BXKSA2 uses a revised internal die layout and thinner wafer, resulting in lower Qc and improved thermal resistance. Pin assignment (A-C-A) remains identical, but layout optimization requires verification of parasitic inductance in high-di/dt layouts.

What is the maximum recommended mounting torque for the TO-247-3 package?

The datasheet specifies a mounting torque of 50–70 N·cm for M3 screws. Exceeding 70 N·cm risks mechanical damage to the leadframe or solder joint integrity; torque below 50 N·cm may cause insufficient thermal contact and localized hot spots above 150°C.

Does IDW32G65C5BXKSA2 require a gate resistor or snubber network?

No. As a Schottky diode with zero reverse recovery, it does not require gate resistors (it has no gate) or snubbers for turn-off. However, a small RC snubber (e.g., 10 Ω + 100 pF) across each anode–cathode is recommended in >200 V/ns dv/dt environments to suppress high-frequency ringing.

Can IDW32G65C5BXKSA2 be used in synchronous rectification topologies?

It is not designed for synchronous rectification, which requires actively controlled MOSFETs. However, it serves as a high-performance alternative to body diodes in SiC MOSFET half-bridges, reducing conduction loss and eliminating reverse recovery in quasi-resonant or LLC converters where MOSFET body diodes would otherwise conduct.