Infineon Technologies IDW40E65D2FKSA1

Overview

IDW40E65D2FKSA1 from Infineon Technologies is a 650 V, 40 A rapid-switching emitter-controlled diode (ECD) optimized for continuous conduction mode (CCM) power factor correction (PFC) boost stages. It delivers 1.6 V forward voltage at 40 A and 25 °C, exhibits 36 ns reverse recovery time and 0.40 µC reverse recovery charge under 1000 A/µs di/dt, and operates up to 175 °C junction temperature.

For engineers reviewing the IDW40E65D2FKSA1 datasheet, IDW40E65D2FKSA1 pinout, IDW40E65D2FKSA1 application, or IDW40E65D2FKSA1 equivalent, key selection criteria include soft switching behavior, low Qrr stability across temperature, ease of paralleling in high-power PFC modules, and compatibility with TO-247-3 mounting and thermal management requirements.

Technical Context

This emitter-controlled diode replaces conventional fast recovery and SiC Schottky diodes in high-efficiency 650 V CCM PFC designs by integrating controlled carrier lifetime and tailored doping profiles to minimize reverse recovery overshoot and EMI generation. Its internal emitter inductance is specified at 13.0 nH, measured 5 mm from case.

The device uses Infineon's proprietary ECD technology to achieve stable V_F over temperature (1.65 V at 175 °C, 40 A), low dirr/dt (–10,000 A/µs), and soft recovery waveforms-enabling reduced snubber losses and simplified gate drive design for companion IGBTs or MOSFETs.

Key Specifications

Pinout & Package

Package: PG-TO247-3 (standard through-hole power package with isolated tab, RoHS-compliant lead plating).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar emitter-controlled diode applications.

Compared with IDW40E65D1FKSA1 and STTH60R06DJF, IDW40E65D2FKSA1 provides superior Q_rr/t_rr trade-off and thermal robustness, making it optimal for new 1–3 kW industrial PFC designs targeting >98% efficiency and compact form factors.

Availability

IDW40E65D2FKSA1 is available at Aetrix Electronics and suitable for industrial power supplies, server PSUs, and motor drive input stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IDW40E65D2FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy applications.

IDW40E65D2FKSA1 belongs to Infineon's Emitter Controlled Diode (ECD) product line, engineered specifically to replace conventional FRDs in high-efficiency, high-frequency CCM PFC converters where soft recovery and thermal stability are critical.

FAQ

What is the maximum allowable case temperature for continuous operation?

The maximum case temperature for continuous operation is 100 °C, as specified in the "Diode forward current" rating (I_F = 40.0 A at T_C = 100 °C). Exceeding this requires derating per the power dissipation curve in Figure 1; at T_C = 125 °C, I_F drops to ~32 A to maintain T_vj ≤ 175 °C.

Is Pin 1 internally connected or electrically isolated?

Pin 1 is explicitly defined as "not connected" in the official datasheet and package drawing. It has no internal bond wire or die connection and must remain unconnected on the PCB. Using it as a mechanical anchor or ground tie risks shorting to adjacent pins or violating creepage/clearance requirements.

How does Q_rr change with junction temperature?

Q_rr increases with junction temperature: from 0.40 µC at 25 °C to 1.14 µC at 175 °C (at VR = 400 V, IF = 40 A, diF/dt = 1000 A/µs). This 2.85× increase is significantly lower than typical FRDs (>5×), enabling more predictable loss modeling across the full operating range.

Can IDW40E65D2FKSA1 be paralleled without external balancing components?

Yes - its positive temperature coefficient of forward voltage ensures inherent current sharing. At 40 A per device, parallel operation shows <±5% current imbalance between units at 175 °C junction temperature, eliminating need for ballast resistors or matched V_F binning in most industrial PFC implementations.