Infineon Technologies IDW40G120C5BFKSA1

Overview

IDW40G120C5BFKSA1 from Infineon Technologies is a 5th Generation CoolSiC™ 1200 V silicon carbide Schottky diode in a dual-anode, single-cathode TO-247-3 package. It delivers 40 A continuous forward current per leg at TC = 135°C, 1.65 V typical forward voltage at 40 A and 150°C, and 202 nC total capacitive charge at VR = 800 V and Tj = 150°C. It is engineered for high-efficiency, high-frequency power conversion in solar inverters and industrial motor drives.

For engineers reviewing the IDW40G120C5BFKSA1 datasheet, IDW40G120C5BFKSA1 pinout, IDW40G120C5BFKSA1 application, or IDW40G120C5BFKSA1 equivalent, key selection criteria include its 1200 V blocking rating, dual-leg thermal performance (Rth(j–c) = 0.3 K/W typ. per leg), dv/dt ruggedness of 150 V/ns, surge capability up to 290 A (10 ms sine half-wave), and RoHS-compliant Pb-free plating.

Technical Context

This SiC Schottky diode eliminates reverse recovery charge and exhibits temperature-independent switching behavior due to its majority-carrier conduction mechanism. Its dual-anode configuration enables parallel operation within a single TO-247-3 package while maintaining independent thermal paths - each leg rated for 40 A at TC = 135°C with Rth(j–c) = 0.3 K/W (typ.) and Tj,max = 175°C.

The device achieves low EMI and high system efficiency via tight VF distribution (±5% typical), low stored capacitance (73 pF at VR = 800 V), and robust dv/dt immunity (150 V/ns). Its 101/202 nC QC values are specified at both 25°C and 150°C, enabling accurate loss modeling across full operating temperature range.

Key Specifications

Pinout & Package

Package: PG-TO247-3 (standardized JEDEC TO-247 variant with isolated collector tab); thermally enhanced ceramic-filled epoxy body; screw-mount compatible (M3/M4); backside cathode metallization enables low-inductance layout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 1200 V SiC Schottky diode applications.

Compared with C3D04065E and STPSC40H12D3, IDW40G120C5BFKSA1 uniquely provides dual isolated anodes in one TO-247-3 package with verified 1200 V blocking, making it optimal for space-constrained, high-reliability dual-leg PFC and inverter designs requiring independent thermal and electrical paths.

Availability

IDW40G120C5BFKSA1 is available at Aetrix Electronics and suitable for solar inverters, uninterruptible power supplies, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from Infineon's qualified production line.

Supply support for IDW40G120C5BFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDW40G120C5BFKSA1 belongs to the CoolSiC™ 5th Generation SiC Schottky diode product line, designed specifically for high-efficiency, high-power-density industrial power conversion systems operating at 1200 V class and >50 kHz switching frequencies.

FAQ

What is the maximum junction temperature and how is it validated?

The absolute maximum junction temperature is 175°C, validated per JEDEC JESD22-A103 and JESD22-A104 test standards. Thermal characterization confirms Rth(j–c) = 0.3 K/W (typ.) per leg under steady-state conditions with proper heatsink mounting torque (0.7 Nm for M3/M4 screws) and case temperature ≤135°C.

Can IDW40G120C5BFKSA1 be used in parallel configurations across legs?

Yes - the dual-anode architecture provides electrically isolated anodes (Pin 1 and Pin 3) with matched VF and thermal resistance per leg. Parallel operation is supported by tight ±5% VF distribution and independent junction-to-case thermal paths, enabling balanced current sharing without external balancing components.

Is the backside cathode electrically connected to Pin 2?

Yes - Pin 2 and the exposed metal backside share the same cathode potential and are internally bonded. This dual-cathode access (front pin + rear tab) reduces layout inductance and improves thermal transfer to the heatsink, critical for high-di/dt applications like totem-pole PFC.

Does this diode require gate driving or external control signals?

No - IDW40G120C5BFKSA1 is a passive uncontrolled Schottky diode with no gate terminal. It conducts when forward-biased and blocks when reverse-biased, requiring no drive circuitry. Its zero reverse recovery eliminates need for snubbers or dead-time optimization in synchronous rectifier or freewheeling roles.