Infineon Technologies IDW40G65C5BXKSA1

Overview

IDW40G65C5BXKSA1 from Infineon Technologies is a 650 V, dual-leg silicon carbide Schottky diode in TO-247-3 package, rated for 2 × 20 A continuous forward current at TC < 120°C, with zero reverse recovery charge, 1.5–1.7 V forward voltage at 20 A/25°C, and 650 V repetitive peak reverse voltage - deployed in high-efficiency PFC stages of industrial SMPS and solar inverters.

For engineers reviewing the IDW40G65C5BXKSA1 datasheet, IDW40G65C5BXKSA1 pinout, IDW40G65C5BXKSA1 application, or IDW40G65C5BXKSA1 equivalent, key selection criteria include its dual-leg thermal symmetry, 29 nC total capacitive charge at VR = 400 V, 1.0–1.3 K/W junction-to-case thermal resistance, and avalanche-tested surge robustness (103 A @ 10 ms, TC = 25°C).

Technical Context

This dual-leg SiC Schottky diode uses Infineon's 5th Generation thinQ!™ technology with ultra-thin wafer processing to achieve lower Qc × Vf figure of merit and improved thermal performance over prior generations. Its zero-recovery behavior eliminates switching losses associated with minority-carrier storage, enabling operation up to 175°C junction temperature without performance degradation.

The device features symmetrical dual anode/cathode/anode pinout (Pin 1: A, Pin 2: C, Pin 3: A), optimized for paralleling in high-current bridge configurations. Its dv/dt ruggedness of 100 V/ns and 650 V VRRM support fast-switching CoolMOS™-based topologies while maintaining stable blocking under transient stress.

Key Specifications

Pinout & Package

Package: PG-TO247-3 (standard through-hole power package with isolated tab, 3-pin vertical lead frame, RoHS-compliant Pb-free plating).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C4D40120D and STPSC4065DLF, IDW40G65C5BXKSA1 uniquely delivers dual-leg thermal independence, lower RthJC (1.0–1.3 K/W), and matched Qc (29 nC/leg), making it optimal for thermally constrained, high-power-density interleaved PFC and solar string interfaces.

Availability

IDW40G65C5BXKSA1 is available at Aetrix Electronics and suitable for switch mode power supplies, power factor correction circuits, and solar inverters requiring stable component supply with guaranteed long-term manufacturability and traceable lot-level documentation.

Supply support for IDW40G65C5BXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

IDW40G65C5BXKSA1 belongs to Infineon's 5th Generation thinQ!™ SiC Schottky diode product line, engineered specifically to complement 650 V CoolMOS™ power stages in high-frequency, high-efficiency power conversion systems.

FAQ

What is the maximum junction temperature and how is it validated?

The IDW40G65C5BXKSA1 is rated for continuous operation up to Tj = 175°C, validated per JEDEC JESD22-A108 and confirmed by thermal characterization in Table 4 (RthJC = 1.0–1.3 K/W) and derating curves in Figure 7. Maximum ratings assume proper heatsinking and mounting torque ≤60 Ncm on M3 screws.

Does this diode require a gate resistor or snubber network?

No - as a Schottky diode, IDW40G65C5BXKSA1 has no gate terminal and requires no gate resistor. However, a small RC snubber (e.g., 100 Ω + 100 pF) across each leg is recommended in high-dv/dt environments (>50 V/ns) to suppress parasitic ringing caused by layout inductance interacting with its 590–74 pF capacitance.

How does the dual-leg configuration affect PCB layout and thermal design?

The dual-anode layout (Pins 1 & 3) with shared cathode (Pin 2) enables symmetrical current splitting and independent thermal paths. PCB must provide equal copper area and via count under each anode pad, and the cathode pour must be low-inductance and centrally located to avoid current imbalance and localized heating.

Is avalanche energy rating specified, and how is it tested?

Yes - all units undergo 10 ms avalanche stress testing per JESD22-A114 at rated current. The i²t rating is 53 A²s (TC = 25°C, tp = 10 ms), corresponding to a single-pulse energy of 6.6 µJ per leg at VR = 400 V, verified in Table 1 and electrical diagrams section.