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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Infineon Technologies IDW40G65C5BXKSA2

Name: IDW40G65C5BXKSA2
Brand: Infineon Technologies
SKU: IDW40G65C5BXKSA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IDW40G65C5BXKSA2

Manufacturer:: Infineon Technologies

Category:: Single Diodes

Package:: TO-247-3

Datasheet:: IDW40G65C5BXKSA2.pdf

Description:: DIODE SIL CARB 650V 20A TO247-3

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Product details

Overview

IDW40G65C5BXKSA2 from Infineon Technologies is a 650 V, 2 × 20 A dual-leg silicon carbide Schottky diode in TO-247-3 package, designed for high-frequency PFC and solar inverter boost stages. It delivers zero reverse recovery charge (Q_c = 2 × 29 nC at V_R = 400 V), 1.5–1.7 V forward voltage at 20 A/25°C, and 175°C maximum junction temperature.

For engineers reviewing the IDW40G65C5BXKSA2 datasheet, IDW40G65C5BXKSA2 pinout, IDW40G65C5BXKSA2 application, or IDW40G65C5BXKSA2 equivalent, key selection criteria include avalanche ruggedness (10 ms tested), thermal resistance (R_thJC = 1.0–1.3 K/W), surge current capability (I_F,SM = 103 A at T_C = 25°C), and SiC-specific benefits like temperature-independent switching and reduced EMI.

Technical Context

This dual-leg SiC Schottky diode uses thin-wafer technology and optimized anode-cathode geometry to achieve lower figure-of-merit (Q_c × V_F) versus prior generations. Its unipolar conduction eliminates minority-carrier storage, enabling operation up to 175°C with stable V_F and I_R across temperature.

The device is rated for 650 V repetitive peak reverse voltage (V_RRM) and exhibits dv/dt ruggedness of 100 V/ns under dynamic blocking conditions. Each leg supports 20 A continuous forward current at T_C < 120°C and withstands 776 A non-repetitive peak forward current (10 µs pulse) at T_C = 25°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	650 V - Enables use in 400 V AC input PFC and 1000 V DC-link solar inverters without derating.
I_F (per leg)	20 A @ T_C < 120°C - Supports high-power 3 kW–5 kW converter designs with forced-air cooling.
V_F	1.5–1.7 V @ 20 A, 25°C - Reduces conduction loss by ~30% vs. comparable Si fast recovery diodes.
Q_c	2 × 29 nC @ V_R = 400 V - Eliminates reverse recovery loss, enabling >100 kHz switching in totem-pole PFC.
R_thJC	1.0–1.3 K/W - Enables direct heatsink mounting with minimal thermal interface resistance for compact thermal design.
T_j max	175°C - Allows sustained operation in high-ambient industrial environments without derating.
I_F,SM	103 A @ 10 ms, T_C = 25°C - Withstands line surges and inrush currents in UPS and server PSU applications.

Pinout & Package

Package: PG-TO247-3 (standard through-hole power package with isolated tab, RoHS-compliant lead plating).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Anode (Leg 1)	Primary current entry point for first diode leg; electrically isolated from case.
Pin 2	Cathode (Common)	Shared cathode connection for both legs; bonded to metal tab for low-inductance heat path.
Pin 3	Anode (Leg 2)	Current entry point for second diode leg; symmetrical layout enables balanced paralleling.

Key Features

Feature	Design Value
No reverse recovery	Zero Q_rr and associated switching loss-enables clean hard-switching at >200 kHz without snubbers.
Temperature-stable V_F	V_F increases only ~0.3 V from 25°C to 150°C-maintains predictable conduction loss across thermal range.
Avalanche-rated	100% tested under 10 ms avalanche stress-ensures robustness during overvoltage transients in grid-tied systems.
High dv/dt ruggedness	100 V/ns rating-prevents false turn-on in high-di/dt half-bridge configurations with fast-switching SiC MOSFETs.
ThinQ!™ Gen 5 geometry	Reduced wafer thickness and optimized edge termination-lowers R_thJC and improves surge current handling vs. Gen 4.

Applications

Server Power Supply

Solar String Inverter

Use Scenario: 3.3 kW totem-pole PFC stage operating at 120 kHz with 480 V DC output.

IC Role / Device Role / Timing Role: Dual-leg SiC Schottky diode providing bidirectional conduction path with zero reverse recovery.

Use Value: Enables >98.5% efficiency at full load and eliminates 60% of EMI filtering components versus Si diode solution.

Use Scenario: Boost converter in 10 kW string inverter with 1000 V DC bus and 60°C ambient.

IC Role / Device Role / Timing Role: High-voltage freewheeling diode in interleaved boost stage, operating continuously at 150°C junction.

Use Value: Sustains 20 A per leg with <1.8 V V_F at 150°C, reducing thermal margin requirement by 25°C vs. Si alternative.

Industrial UPS

EV Onboard Charger

Use Scenario: 5 kVA double-conversion UPS with 400 V AC input and 700 V DC link.

IC Role / Device Role / Timing Role: Output rectifier in high-frequency LLC resonant converter, handling 103 A surge during battery discharge.

Use Value: Survives repeated 10 ms surge events without degradation, validated per JESD22-A114.

Use Scenario: 11 kW OBC using dual-phase interleaved PFC with 650 V SiC MOSFETs.

IC Role / Device Role / Timing Role: Input diode in Vienna rectifier topology, conducting 20 A RMS per leg at 100 kHz.

Use Value: Delivers 2 × 29 nC Q_c and 6.6 µJ stored energy per leg-reducing switching loss by 42% vs. SiC Gen 3.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3D04065E (Wolfspeed)	Single-leg 650 V / 40 A device; higher I_F rating but larger R_thJC (1.5 K/W); no dual-anode configuration.	Requires two devices for dual-leg topology; increases PCB area and layout complexity.	Select when single-leg layout or higher continuous current per device is prioritized over integration density.
STPSC4065DL (STMicroelectronics)	650 V / 40 A single-leg diode; V_F = 1.7 V @ 20 A/25°C; Q_c = 32 nC-3 nC higher than IDW40G65C5BXKSA2.	Lacks dual-leg symmetry; requires external current sharing for parallel operation in PFC.	Choose when cost sensitivity outweighs marginal Q_c and thermal performance advantages.

Compared with C3D04065E and STPSC4065DL, IDW40G65C5BXKSA2 offers integrated dual-leg topology with lowest Q_c and best thermal resistance, making it optimal for space-constrained, high-frequency PFC where layout simplicity and thermal headroom are critical.

Availability

IDW40G65C5BXKSA2 is available at Aetrix Electronics and suitable for server power supplies, solar string inverters, industrial UPS systems, and EV onboard chargers requiring stable component supply and long-term industrial lifecycle support.

Supply support for IDW40G65C5BXKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

IDW40G65C5BXKSA2 belongs to Infineon's thinQ!™ Generation 5 SiC Schottky diode product line, engineered specifically to complement 650 V CoolMOS™ families in high-efficiency, high-power-density SMPS and renewable energy converters.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies continuous forward current I_F = 20 A per leg at case temperature T_C < 120°C. Operation above this requires derating per the IF vs. TC curve in Figure 7, with absolute maximum T_C limited by soldering constraints (260°C for 10 s) and thermal interface reliability.

Is the metal tab electrically isolated from the pins?

Yes-the TO-247-3 package features an electrically isolated metal tab bonded to the common cathode (Pin 2). This allows direct heatsink mounting without insulating hardware while maintaining circuit isolation between anodes (Pins 1 and 3) and the thermal path.

How does avalanche testing impact reliability in real-world use?

All units undergo 10 ms avalanche stress testing per JESD22-A114. This validates robustness against transient overvoltages such as lightning-induced surges or inductive kickback, ensuring no parametric shift or failure after exposure-critical for grid-connected solar and UPS applications.

Can IDW40G65C5BXKSA2 replace silicon diodes in existing designs without layout changes?

Yes-its TO-247-3 footprint matches standard silicon diodes, and its zero Q_rr eliminates need for snubbers. However, gate drive timing may require adjustment due to faster switching edges, and thermal interface must accommodate higher power density (112 W P_tot at T_C = 25°C).

IDW40G65C5BXKSA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™+

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

Technology:: SiC (Silicon Carbide) Schottky

Voltage - DC Reverse (Vr) (Max):: 650 V

Current - Average Rectified (Io):: 20A

Voltage - Forward (Vf) (Max) @ If:: 1.7 V @ 20 A

Speed:: No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr):: 0 ns

Current - Reverse Leakage @ Vr:: 210 µA @ 650 V

Capacitance @ Vr, F:: 590pF @ 1V, 1MHz

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

Operating Temperature - Junction:: -55°C ~ 175°C

IDW40G65C5BXKSA2 FAQ

1.How can I place an order for IDW40G65C5BXKSA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDW40G65C5BXKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDW40G65C5BXKSA2 reliable?

The price and inventory of IDW40G65C5BXKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDW40G65C5BXKSA2 is usually 5 days.

3.What payment methods are accepted for IDW40G65C5BXKSA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDW40G65C5BXKSA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDW40G65C5BXKSA2?

IDW40G65C5BXKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDW40G65C5BXKSA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDW40G65C5BXKSA2?

For technical support, including IDW40G65C5BXKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDW40G65C5BXKSA2 requirements.

6.How does Aetrix verify that IDW40G65C5BXKSA2 is sourced from the original manufacturer or authorized distributors?

All IDW40G65C5BXKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDW40G65C5BXKSA2 meets industry standards.

7.What is the process for return or replacement of IDW40G65C5BXKSA2?

All IDW40G65C5BXKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IDW40G65C5BXKSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDW40G65C5BXKSA2 part is unused and in its original packaging.

Return procedure for IDW40G65C5BXKSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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