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Infineon Technologies IDW75D65D1XKSA1
- Part No.:
- IDW75D65D1XKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-247-3
- Datasheet:
-
IDW75D65D1XKSA1.pdf
- Description:
- DIODE GEN PURP 650V 150A TO247-3
- Quantity:
- Payment:
- Shipping:
Inventory:2,129
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Product details
Overview
IDW75D65D1XKSA1 from Infineon Technologies is a 650 V, 75 A dual-anode emitter-controlled diode (ECD) optimized for high-frequency switching in industrial power converters. It features ultra-fast recovery (trr ≤ 127 ns at 25°C), low Qrr (0.48 µC), and 175°C junction operation. Used as boost diodes in PFC stages and freewheeling diodes in motor drives, it delivers stable VF (1.35 V @ 75 A, 25°C) with temperature-stable parameters across operating range.
For engineers reviewing the IDW75D65D1XKSA1 datasheet, IDW75D65D1XKSA1 pinout, IDW75D65D1XKSA1 application, or IDW75D65D1XKSA1 equivalent, key selection criteria include reverse recovery charge (Qrr), junction-to-case thermal resistance (0.46 K/W), dual-anode current sharing capability, and JEDEC-qualified reliability for industrial power control systems.
Technical Context
This emitter-controlled diode integrates two independent anodes (pins 1 and 3) sharing a common cathode (pin 2 + backside), enabling balanced current distribution up to 75 A per anode under thermal-limited conditions. Its ECD architecture eliminates minority-carrier storage, yielding sub-130 ns trr and minimal tail current even at 175°C junction temperature.
Designed for hard-switched topologies, it sustains 1000 A/µs diF/dt with controlled dirr/dt (−1100 A/µs typical), low internal emitter inductance (7.0 nH), and robust surge rating (580 A IFSM). Thermal performance is defined by Rth(j–c) = 0.46 K/W, supporting high-power density layouts when mounted on heatsinks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - Maximum repetitive reverse voltage before breakdown; enables use in 400 V AC input PFC and 600 V bus inverters. |
| IF (TC = 25°C) | 75 A - Continuous forward current per anode at case temperature 25°C; total device capacity is 150 A with balanced dual-anode conduction. |
| VF @ 75 A, 25°C | 1.35 V - Low forward voltage drop directly reduces conduction losses in high-current PFC and inverter freewheeling paths. |
| trr @ 75 A, 25°C | 127 ns - Ultra-fast reverse recovery time minimizes switching loss and EMI in >100 kHz SMPS and motor drive applications. |
| Qrr @ 75 A, 25°C | 0.48 µC - Extremely low reverse recovery charge reduces turn-on loss of paired IGBTs/MOSFETs and improves system efficiency. |
| Tvj max | 175°C - Extended junction temperature rating supports compact thermal design and high ambient operation in industrial enclosures. |
| Rth(j–c) | 0.46 K/W - Low junction-to-case thermal resistance enables effective heat transfer to heatsink, critical for sustained 75 A per anode operation. |
Pinout & Package
Package: PG-TO247-3 (standard TO-247 variant with 3 leads and electrically isolated backside cathode).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode A | First independent anode terminal; rated for 75 A continuous (bondwire-limited); used for parallel current path in dual-anode configuration. |
| Pin 2 | Cathode | Main cathode connection; electrically tied to metal backside; serves both anodes in common-cathode topology. |
| Pin 3 | Anode B | Second independent anode terminal; identical rating and function to Pin 1; enables symmetrical current splitting and thermal balancing. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-anode structure | Enables 150 A total forward current handling with balanced thermal distribution across two independent anode terminals. |
| Emitter-controlled technology | Eliminates minority-carrier storage, delivering near-zero reverse recovery tail and predictable trr/Qrr across temperature and current. |
| JEDEC qualification | Validated for industrial power control applications per JEDEC standards, ensuring long-term reliability under thermal cycling and humidity stress. |
| Pb-free & RoHS compliant | Meets global environmental regulations; lead plating compatible with standard wave soldering (260°C, 10 s) and reflow profiles. |
Applications
| AC/DC PFC Boost Stage | Motor Drive Freewheeling Path |
|---|---|
Use Scenario: High-efficiency active PFC stage in 3 kW server PSU or telecom rectifier, operating at 70–100 kHz switching frequency. IC Role / Device Role / Timing Role: Fast-recovery boost diode conducting during MOSFET/IGBT off-time; handles peak currents up to 75 A per anode. Use Value: Low Qrr (0.48 µC) and fast trr (127 ns) reduce switching losses in the upstream switch and improve overall PFC efficiency by ≥0.3%. |
Use Scenario: Three-phase inverter driving 15 kW induction motor in HVAC or industrial pump, with 125°C ambient and forced-air cooling. IC Role / Device Role / Timing Role: Freewheeling diode clamping inductive kickback during IGBT commutation; conducts bidirectional reactive current in each leg. Use Value: 175°C Tvj rating and stable VF (1.28 V @ 175°C) ensure reliable operation without derating under sustained thermal stress. |
| General Purpose Inverter Output Stage | Switch Mode Power Supply Output Rectification |
Use Scenario: 5 kW solar string inverter DC–AC stage using six-pack IGBT module with external anti-parallel diodes. IC Role / Device Role / Timing Role: Anti-parallel diode providing commutation path for inductive load current during IGBT turn-off. Use Value: Dual-anode layout allows precise current sharing between pins 1 and 3, reducing localized heating and improving module-level thermal uniformity. |
Use Scenario: Secondary-side synchronous rectification replacement in 1.5 kW medical-grade SMPS, requiring zero-voltage switching compatibility. IC Role / Device Role / Timing Role: High-speed output rectifier in LLC resonant converter, operating at 300–500 kHz with 400 V output bus. Use Value: Ultra-low LE (7.0 nH) and controlled dirr/dt minimize voltage overshoot and snubber requirements, simplifying EMI filter design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed power diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDW75D65D2XKSA1 | Same package and voltage rating, but single-anode configuration (75 A total, not dual-anode); higher VF (1.42 V @ 75 A) and slower trr (145 ns). | Lacks dual-anode current splitting; unsuitable where thermal balancing or 150 A aggregate conduction is required. | Select only when board layout restricts three-terminal mounting or dual-anode routing is impractical. |
| STTH120R06DJF | 650 V, 120 A hyperfast diode in TO-247AD; Qrr = 1.9 µC (≈4× higher), trr = 220 ns, Rth(j–c) = 0.55 K/W. | Higher switching loss and thermal resistance limit usable frequency and power density in PFC and inverter designs. | Consider only if cost sensitivity outweighs efficiency targets and thermal constraints allow higher loss budget. |
Compared with IDW75D65D1XKSA1, the D2 variant sacrifices dual-anode flexibility and efficiency for simpler layout, while the STTH part trades significant Qrr and trr penalties for broader vendor availability-neither matches the ECD's combination of ultra-low recovery charge, dual-anode scalability, and 175°C operation.
Availability
IDW75D65D1XKSA1 is available at Aetrix Electronics and suitable for AC/DC converters, motor drive freewheeling paths, and general-purpose inverters requiring stable component supply, JEDEC-qualified reliability, and high-temperature operation.
Supply support for IDW75D65D1XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy applications.
IDW75D65D1XKSA1 belongs to Infineon's Emitter Controlled Diode (ECD) product line, engineered specifically for high-efficiency, high-frequency industrial power conversion where ultra-fast recovery and thermal robustness are critical.
FAQ
What is the maximum continuous current per anode for IDW75D65D1XKSA1?
The device supports 75 A continuous forward current per anode (pins 1 and 3) at TC = 25°C, with total device rating of 150 A under balanced dual-anode conduction. Bondwire limits individual pin current to 80 A, and thermal derating applies above 25°C case temperature per the Ptot vs. TC curve.
Can IDW75D65D1XKSA1 be used as a direct replacement for standard ultrafast diodes like UF3007?
No-it is not a drop-in replacement due to its dual-anode structure and ECD physics. Standard ultrafast diodes lack separate anode terminals and exhibit higher Qrr and longer trr. Substitution requires PCB layout changes, gate-drive timing review, and loss recalculations to account for lower switching losses and altered current paths.
How does the emitter-controlled architecture affect reverse recovery behavior?
ECD technology eliminates minority-carrier injection, resulting in negligible stored charge and no reverse recovery tail. This yields deterministic, temperature-stable trr and Qrr-unlike conventional PN diodes-enabling predictable loss modeling and reduced snubber demands in hard-switched circuits.
Is the backside cathode electrically isolated from the mounting surface?
Yes-the metal backside serves as the cathode terminal and is electrically isolated from the package's mounting flange per PG-TO247-3 mechanical specification. Mounting requires electrically insulating thermal interface material unless the heatsink is referenced to cathode potential.
IDW75D65D1XKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 150A
- Voltage - Forward (Vf) (Max) @ If:
- 1.7 V @ 75 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 108 ns
- Current - Reverse Leakage @ Vr:
- 40 µA @ 650 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO247-3
- Operating Temperature - Junction:
- -40°C ~ 175°C
IDW75D65D1XKSA1 FAQ
1.How can I place an order for IDW75D65D1XKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDW75D65D1XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDW75D65D1XKSA1 reliable?
The price and inventory of IDW75D65D1XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDW75D65D1XKSA1 is usually 5 days.
3.What payment methods are accepted for IDW75D65D1XKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDW75D65D1XKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDW75D65D1XKSA1?
IDW75D65D1XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDW75D65D1XKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDW75D65D1XKSA1?
For technical support, including IDW75D65D1XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDW75D65D1XKSA1 requirements.
6.How does Aetrix verify that IDW75D65D1XKSA1 is sourced from the original manufacturer or authorized distributors?
All IDW75D65D1XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDW75D65D1XKSA1 meets industry standards.
7.What is the process for return or replacement of IDW75D65D1XKSA1?
All IDW75D65D1XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDW75D65D1XKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDW75D65D1XKSA1 part is unused and in its original packaging.
Return procedure for IDW75D65D1XKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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