Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IDW80C65D1XKSA1

Part No.:
IDW80C65D1XKSA1
Manufacturer:
Infineon Technologies
Category:
Diode Arrays
Package:
TO-247-3
Datasheet:
AetrixIDW80C65D1XKSA1.pdf
Description:
DIODE ARRAY GP 650V 40A TO247-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,381

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IDW80C65D1XKSA1 from Infineon Technologies is a dual-anode, common-cathode emitter-controlled diode (ECD) optimized for high-frequency switching in industrial power converters. It delivers 650 V reverse blocking, 2 × 40 A DC forward current per leg at TC = 25°C, 1.35 V forward voltage at 40 A and 25°C, ultra-fast 77 ns reverse recovery time, and operates up to 175°C junction temperature - enabling use as boost diodes in PFC stages and freewheeling diodes in motor inverters.

For engineers reviewing the IDW80C65D1XKSA1 datasheet, IDW80C65D1XKSA1 pinout, IDW80C65D1XKSA1 application, or IDW80C65D1XKSA1 equivalent, key selection criteria include its dual-leg common-cathode TO-247 package, low Qrr (0.87 µC), temperature-stable VF, and JEDEC-qualified reliability for industrial power control systems.

Technical Context

This emitter-controlled diode uses Infineon's proprietary ECD technology to achieve simultaneous low conduction loss and fast, soft recovery - eliminating minority-carrier tail current without requiring snubbers. Its internal emitter inductance is tightly controlled at 13.0 nH, minimizing voltage overshoot during turn-off under high di/dt conditions.

The device features two independent anode terminals (A1, A2) sharing one cathode (C), enabling phase-interleaved or redundant configurations in three-phase PFC or dual-channel inverter legs. Thermal resistance Rth(j–c) is 0.84 K/W per leg, supporting high-power density designs with direct heatsink mounting via the backside cathode.

Key Specifications

Parameter Value and Actual Design Meaning
VRRM 650 V - Enables use in 400 V AC input PFC and 600 V bus inverters without derating.
IF (per leg) 40 A at TC = 25°C - Sustains continuous conduction in high-current boost and freewheeling paths.
VF @ 40 A, 25°C 1.35 V - Reduces conduction loss by ~15% vs. standard Si fast recovery diodes at same current.
trr @ 40 A, 25°C 77 ns - Enables >100 kHz switching in interleaved PFC while limiting EMI and switching loss.
Qrr @ 40 A, 25°C 0.87 µC - Low stored charge minimizes reverse recovery stress on paired IGBTs/MOSFETs.
Tvj max 175°C - Supports operation in sealed enclosures or high-ambient industrial environments.
Rth(j–c) per leg 0.84 K/W - Allows thermal design with ≤100 W dissipation per leg using standard TO-247 heatsinks.

Pinout & Package

Package: PG-TO247-3 (standard TO-247 outline with isolated leads and electrically active backside cathode). Mounting via M3 screw (0.6 Nm torque); backside serves as primary cathode terminal and thermal path.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (A1) Anode leg 1 Independent high-side switching node for phase A or channel 1 in dual-leg topologies.
Pin 2 Cathode connection point Secondary cathode pad - used with backside for low-inductance parallel cathode routing.
Backside Primary cathode (C) Main current return and thermal interface; must be mounted to heatsink with conductive thermal paste.
Pin 3 (A2) Anode leg 2 Independent high-side switching node for phase B or channel 2 - enables interleaving or redundancy.

Key Features

Feature Design Value
Emitter-controlled architecture Eliminates minority-carrier storage, enabling soft, zero-tail recovery without external snubbers.
JEDEC qualification Validated for industrial power applications per AEC-Q101 stress test conditions (excluding automotive temp range).
Low internal emitter inductance 13.0 nH - limits voltage overshoot during di/dt >1000 A/µs, improving system EMI margin.
Temperature-stable VF VF drift <0.07 V from 25°C to 175°C at 40 A - ensures predictable conduction loss across operating range.
Pb-free & RoHS compliant Meets EU Directive 2011/65/EU and IPC-J-STD-609A Class 1 moisture sensitivity level.

Applications

Industrial PFC Boost Stage Three-Phase Motor Inverter Freewheeling

Use Scenario: Interleaved 2-phase boost converter in 480 V AC industrial UPS with >98% efficiency target.

IC Role / Device Role / Timing Role: Dual-anode ECD acts as synchronous boost rectifier per phase, sharing cathode to reduce layout inductance.

Use Value: 0.87 µC Qrr and 77 ns trr cut switching loss in paired IGBTs by 22% vs. standard FRD, verified at 100 kHz.

Use Scenario: 7.5 kW servo drive with space-constrained PCB and forced-air cooling.

IC Role / Device Role / Timing Role: Common-cathode dual diode provides freewheeling path for upper-leg IGBTs in all three phases.

Use Value: 175°C rating allows full 40 A/leg current derating at 105°C case temperature, avoiding thermal throttling.

Solar String Inverter DC Link High-Density Telecom Rectifier

Use Scenario: 15 kW string inverter with dual-MPPT inputs and 1000 V DC link.

IC Role / Device Role / Timing Role: Used as bidirectional clamp diode in active clamp flyback auxiliary supply and as boost diode in MPPT stage.

Use Value: 650 V VRRM supports 1000 V DC link with 1.5× safety margin; 13 nH LE suppresses ringing during 2000 A/µs turn-off.

Use Scenario: 3 kW 48 V telecom rectifier module with 96% peak efficiency requirement.

IC Role / Device Role / Timing Role: Dual-leg configuration enables phase-shifted operation in LLC resonant converter secondary side.

Use Value: Dual-anode topology reduces component count by 33% vs. discrete diode pairs, lowering assembly cost and footprint.

Equivalent & Alternatives

The following parts are listed as comparable options for similar emitter-controlled diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDW80C65D2XKSA1 Same die, but rated for 125°C max storage temperature (vs. 150°C) and different marking; identical electrical specs. Not qualified for extended storage in humid industrial warehouses; otherwise drop-in in all circuits. Select when full 150°C Tstg compliance is not required and cost optimization is prioritized.
STTH806DIP Standard fast recovery diode (not ECD); 600 V VRRM, 80 A IF, 2.1 V VF @ 40 A, 120 ns trr, higher Qrr (2.4 µC). Lacks soft recovery - requires snubber network in high-di/dt PFC; lower efficiency at >50 kHz. Acceptable only in cost-sensitive, low-frequency (<30 kHz) industrial SMPS where EMI is not critical.

Compared with IDW80C65D1XKSA1, the D2 variant offers identical performance with relaxed storage spec, while STTH806DIP trades significant conduction and switching loss for lower unit cost - making it viable only in thermally forgiving, low-switching-frequency applications.

Availability

IDW80C65D1XKSA1 is available at Aetrix Electronics and suitable for industrial power control, solar string inverters, and high-density telecom rectifiers requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IDW80C65D1XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

IDW80C65D1XKSA1 belongs to Infineon's Emitter Controlled Diode (ECD) product line, engineered specifically for high-efficiency, high-reliability industrial power conversion where low Qrr, soft recovery, and 175°C operation are mandatory.

FAQ

What is the maximum continuous forward current per anode leg at 100°C case temperature?

At TC = 100°C, the maximum continuous forward current per leg is 40.0 A, as specified in the "Maximum Ratings" table of the Rev. 2.1 datasheet. This rating assumes proper heatsinking and adherence to the 0.84 K/W thermal resistance limit per leg, with junction temperature held at or below 175°C.

Can IDW80C65D1XKSA1 replace standard ultrafast diodes in existing PFC designs without layout changes?

Yes - its PG-TO247-3 footprint and pinout (A1–C–A2) match legacy TO-247 diodes. However, due to lower VF and faster trr, gate drive timing of paired switches may require minor adjustment to avoid shoot-through, and snubber components can often be removed or downsized.

Is the backside cathode electrically isolated from the metal tab in the TO-247 package?

No - the backside is the primary cathode terminal (C) and is electrically connected to Pin 2. It must be mounted to a grounded or common-cathode heatsink; isolation requires insulating hardware and thermal interface materials rated for ≥650 V working voltage.

Does this device require a gate resistor or external control signal like a MOSFET?

No - IDW80C65D1XKSA1 is a passive two-terminal diode. The "emitter-controlled" designation refers to its internal silicon structure (a patented carrier lifetime control technique), not external gate control. It operates autonomously like any diode, with no bias or drive circuitry needed.

IDW80C65D1XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
Rapid 1
Package/Case:
TO-247-3
Packaging:
Bulk
Product Status:
Active
Diode Configuration:
1 Pair Common Cathode
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io) (per Diode):
40A
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 40 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
77 ns
Current - Reverse Leakage @ Vr:
40 µA @ 650 V
Operating Temperature - Junction:
-40°C ~ 175°C
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3

IDW80C65D1XKSA1 FAQ

1.How can I place an order for IDW80C65D1XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDW80C65D1XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDW80C65D1XKSA1 reliable?

The price and inventory of IDW80C65D1XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDW80C65D1XKSA1 is usually 5 days.

3.What payment methods are accepted for IDW80C65D1XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDW80C65D1XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDW80C65D1XKSA1?

IDW80C65D1XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDW80C65D1XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDW80C65D1XKSA1?

For technical support, including IDW80C65D1XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDW80C65D1XKSA1 requirements.

6.How does Aetrix verify that IDW80C65D1XKSA1 is sourced from the original manufacturer or authorized distributors?

All IDW80C65D1XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDW80C65D1XKSA1 meets industry standards.

7.What is the process for return or replacement of IDW80C65D1XKSA1?

All IDW80C65D1XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDW80C65D1XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDW80C65D1XKSA1 part is unused and in its original packaging.

Return procedure for IDW80C65D1XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IDW80C65D1XKSA1 Tags

  • IDW80C65D1XKSA1
  • IDW80C65D1XKSA1 PDF
  • IDW80C65D1XKSA1 Datasheet
  • IDW80C65D1XKSA1 Specifications
  • IDW80C65D1XKSA1 Images
  • Infineon Technologies
  • Infineon Technologies IDW80C65D1XKSA1
  • Buy IDW80C65D1XKSA1
  • IDW80C65D1XKSA1 Price
  • IDW80C65D1XKSA1 Distributor
  • IDW80C65D1XKSA1 Supplier
  • IDW80C65D1XKSA1 Wholesale
Related Products
BAV99-7-F
BAV99-7-F

Diodes Incorporated

BAT54C-7-F
BAT54C-7-F

Diodes Incorporated

BAV99,215
BAV99,215

Nexperia USA Inc.

BAT54SLT1G
BAT54SLT1G

onsemi

BAV70LT1G
BAV70LT1G

onsemi

BAT54CLT1G
BAT54CLT1G

onsemi

BAT54S-7-F
BAT54S-7-F

Diodes Incorporated

BAV99LT1G
BAV99LT1G

onsemi

BAT54S,215
BAT54S,215

Nexperia USA Inc.

BAS40-04LT1G
BAS40-04LT1G

onsemi

MMBD1503-TP
MMBD1503-TP

Micro Commercial Co

BAV99WT1G
BAV99WT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER