Infineon Technologies IDWD10G200C5XKSA1

Overview

IDWD10G200C5XKSA1 from Infineon Technologies is a 2000 V, 10 A CoolSiC™ Gen 5 Schottky diode in PG-TO247-2-U01 package, designed for high-voltage DC-link freewheeling and boost stages in industrial and EV charging inverters. It delivers 1.5 V forward voltage at 10 A/25°C, zero reverse recovery charge, and 100 V/ns dv/dt ruggedness - enabling efficient, snubberless operation in 3-phase string inverters operating up to 175°C junction temperature.

For engineers reviewing the IDWD10G200C5XKSA1 datasheet, IDWD10G200C5XKSA1 pinout, IDWD10G200C5XKSA1 application, or IDWD10G200C5XKSA1 equivalent, key selection criteria include its 2000 V blocking capability, tight VF distribution (±0.25 V), thermal resistance Rth(j-c) of 0.47–0.61 K/W, surge current rating of 97 A (10 ms), and qualification per JEDEC47/20/22 for industrial use.

Technical Context

This SiC Schottky diode operates as a unipolar majority-carrier device with no minority-carrier storage, eliminating reverse recovery losses and associated EMI. Its wide-bandgap material enables stable switching behavior across -55°C to +175°C, with VF increasing only marginally (to 2.3 V at 150°C) and IR remaining below 36 µA at full rated voltage and temperature.

The device uses Infineon's .XT interconnection technology to minimize parasitic inductance and maximize thermal transfer from die to case. Its PG-TO247-2-U01 package features isolated mounting screw hole and optimized copper clip layout, supporting high-power density designs requiring <0.61 K/W junction-to-case thermal resistance and >100 V/ns dv/dt immunity.

Key Specifications

Pinout & Package

Package: PG-TO247-2-U01 - Isolated-mount, 2-pin through-hole package with copper-clad leadframe, optimized for low-inductance, high-current, and high-thermal-conductivity PCB layouts. Dimensions per Infineon outline drawing: 21.1 × 15.9 × 20.1 mm (L × W × H), M3 mounting screw, 0.6 Nm torque rating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC Schottky diode applications.

Compared with C3D10065I and UJ3D1020K, IDWD10G200C5XKSA1 uniquely combines 2000 V rating, 100 V/ns dv/dt ruggedness, JEDEC industrial qualification, and .XT thermal performance - making it the only option qualified for mission-critical 1500 V EV charging and solar inverter platforms.

Availability

IDWD10G200C5XKSA1 is available at Aetrix Electronics and suitable for EV onboard chargers, industrial solar string inverters, high-power motor drives, and energy storage system bi-directional converters requiring stable component supply, long-lifecycle assurance, and traceable sourcing.

Supply support for IDWD10G200C5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure serving automotive, industrial, and renewable energy markets.

IDWD10G200C5XKSA1 belongs to Infineon's CoolSiC™ Gen 5 Schottky diode product line, engineered specifically for high-efficiency, high-reliability 1500 V+ power conversion systems where zero reverse recovery, thermal stability, and industrial qualification are mandatory.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies IF = 10 A at Tc = 159°C, with absolute maximum junction temperature Tvj = 175°C. Using Rth(j-c) = 0.61 K/W, the maximum allowable case temperature for continuous 10 A operation is 159°C - exceeding this requires derating per Figure 4 (IF = f(Tc)) to maintain Tvj ≤ 175°C.

Does IDWD10G200C5XKSA1 require a gate resistor or snubber circuit?

No. As a Schottky diode, it has no gate and requires no gate resistor. Its 100 V/ns dv/dt ruggedness and zero Qrr eliminate the need for snubbers in typical 3-phase inverter applications - confirmed by Infineon's application note AN2022-05 on snubberless SiC diode design.

How does the .XT interconnection improve thermal performance?

The .XT interconnection replaces traditional wire bonds with copper clips and solder-free die attach, reducing thermal resistance by 15% (Rth(j-c) = 0.47–0.61 K/W vs. 0.55–0.72 K/W in legacy TO-247). This lowers junction temperature rise by up to 10.5 K at 100 W dissipation, extending lifetime per Arrhenius model.

Is IDWD10G200C5XKSA1 compatible with lead-free reflow soldering?

Yes. The PG-TO247-2-U01 package is qualified for lead-free wave soldering at 260°C for 10 s (1.6 mm from case), per Table 1. Reflow profiles must limit peak temperature to ≤260°C and maintain Tc < 150°C during soldering to avoid die metallization degradation.