Infineon Technologies IDWD120E120D7XKSA1

Overview

IDWD120E120D7XKSA1 from Infineon Technologies is a 1200 V, 120 A ultrafast soft-recovery emitter-controlled diode in PG-TO247-2-STD package, designed for high-efficiency power conversion in industrial and home appliance inverters. It delivers low forward voltage (VF = 2.3–3.0 V), ultrafast trr (190–230 ns), low Qrr (2.05–6.05 µC), and operates up to 175 °C junction temperature - enabling reduced switching losses and thermal stress in string inverters and EV charging systems.

For engineers reviewing the IDWD120E120D7XKSA1 datasheet, IDWD120E120D7XKSA1 pinout, IDWD120E120D7XKSA1 application, or IDWD120E120D7XKSA1 equivalent, key selection criteria include its 1200 V VRRM rating, soft recovery behavior under high di/dt (up to 240 A/µs), low reverse recovery energy (Erec ≤ 1.75 mJ), and RoHS-compliant humidity-robust construction for long-term reliability in harsh environments.

Technical Context

This emitter-controlled diode uses Infineon's Emitter Controlled 7 (EC7) technology to achieve simultaneous low VF and ultrafast soft recovery - critical for minimizing commutation losses when paired with high-speed IGBTs like IKY140N120CH7. Its dynamic performance is characterized at VR = 800 V, IF = 60–120 A, and -diF/dt = 1000 A/µs, with parasitic Lσ = 27 nH and Cσ = 12 pF.

The device features a dual-terminal TO-247 package with cathode on Pin 1 and backside, anode on Pin 2, and is qualified per JEDEC47/20/22 for industrial applications. Thermal resistance Rth(j-c) is 0.24–0.31 K/W, supporting high-power density designs where junction-to-case heat transfer is tightly managed.

Key Specifications

Pinout & Package

Package: PG-TO247-2-STD (standard 3-pin outline with Pin 2 omitted; electrically 2-terminal device). Case material is thermally conductive plastic with isolated backside cathode. Mounting torque: 0.6 Nm (M3 screw).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast soft-recovery diode applications.

Compared with STTH120R04DJF and MDD120-12N1, IDWD120E120D7XKSA1 uniquely balances 1200 V robustness with sub-250 ns soft recovery and <6 µC Qrr at 175 °C - making it the only option qualified for high-reliability, high-density 1000 V+ inverter topologies requiring minimal snubber design.

Availability

IDWD120E120D7XKSA1 is available at Aetrix Electronics and suitable for string inverters, EV-charging stations, and heat pump systems requiring stable component supply, long lifecycle support, and traceable sourcing for industrial-grade production.

Supply support for IDWD120E120D7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDWD120E120D7XKSA1 belongs to Infineon's Emitter Controlled Diode (ECD) product line, engineered specifically for high-efficiency, high-reliability power conversion in next-generation solar inverters, EV infrastructure, and smart home appliances.

FAQ

What is the maximum recommended mounting torque for IDWD120E120D7XKSA1?

The datasheet specifies a maximum mounting torque of 0.6 Nm for the M3 screw used to secure the PG-TO247-2-STD package to the heatsink. Exceeding this value risks cracking the case or damaging the internal bond wires, leading to premature failure under thermal cycling. Torque must be applied using a calibrated tool, and the mounting surface must be flat and free of burrs.

Can IDWD120E120D7XKSA1 replace standard ultrafast diodes in existing 1200 V designs?

Yes - it is a direct drop-in replacement for legacy 1200 V ultrafast diodes in TO-247 packages, provided the PCB footprint and thermal interface match. Its lower VF and softer recovery reduce both conduction and switching losses, but layout parasitics (especially stray inductance) must remain ≤27 nH to maintain specified trr and Qrr performance per the test circuit.

Is humidity testing data publicly available for IDWD120E120D7XKSA1?

Yes - Infineon qualifies this part per JEDEC22-A110 (highly accelerated stress test – HAST) and JEDEC22-A101 (steady-state humidity bias), confirming stable IR and VF after 96 hours at 85 °C/85% RH with 1200 V bias. Full test reports are available under NDA via Infineon's industrial support portal.

Does IDWD120E120D7XKSA1 require gate drive or external control signals?

No - it is a passive two-terminal power diode with no gate or control terminals. Operation is fully determined by applied voltage polarity and magnitude across its anode (Pin 2) and cathode (Pin 1 + backside). No biasing, timing, or logic interface is needed; it conducts when forward-biased and blocks when reverse-biased up to 1200 V.