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Infineon Technologies IDWD140E120D7XKSA1

Part No.:
IDWD140E120D7XKSA1
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
TO-247-2
Datasheet:
AetrixIDWD140E120D7XKSA1.pdf
Description:
DIODE GEN PURP 1200V 207A TO247
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:167

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Product details

Overview

IDWD140E120D7XKSA1 from Infineon is a 1200 V, 140 A ultrafast soft-recovery emitter-controlled diode in PG-TO247-2-STD package, optimized for high-efficiency power conversion in string inverters and EV charging systems. It delivers VF = 2.3–3.0 V (140 A, 25–175 °C), trr = 160–245 ns, Qrr = 3.1–7.55 µC, and Tvjmax = 175 °C with low Erec and robust humidity resistance.

For engineers reviewing the IDWD140E120D7XKSA1 datasheet, IDWD140E120D7XKSA1 pinout, IDWD140E120D7XKSA1 application, or IDWD140E120D7XKSA1 equivalent, key selection criteria include reverse recovery charge at 175 °C, softness factor (low Irrm/diF/dt ratio), thermal resistance Rth(j-c) = 0.21–0.27 K/W, and JEDEC-qualified industrial reliability.

Technical Context

This emitter-controlled diode uses Infineon's Emitter Controlled 7 (EC7) technology to achieve ultrafast recovery with minimal voltage overshoot and oscillation during turn-off. Its soft recovery behavior-evidenced by low dirr/dt (115–260 A/µs) and controlled Irrm (27–50 A)-reduces EMI and stress on co-packaged IGBTs in hard-switched topologies.

The device operates across -40 to +175 °C junction temperature, supports repetitive surge currents up to 420 A (IFRM), and features Pb-free RoHS-compliant plating with humidity-robust packaging validated per JEDEC22-A101/A110. Thermal design leverages low Rth(j-c) and defined mounting torque (0.6 Nm for M3 screw).

Key Specifications

Parameter Value and Actual Design Meaning
VRRM 1200 V - Enables use in 1000 V DC-link systems with 20% safety margin against transients.
IF (Tc = 91 °C) 140 A - Continuous forward current rating at realistic heatsink temperature for industrial thermal management.
VF (140 A, 175 °C) 2.3 V - Low conduction loss enabling >98.5% efficiency in 15–30 kW string inverters.
trr (140 A, 175 °C) 245 ns - Ultrafast recovery minimizes switching losses and enables >20 kHz operation with IGBTs.
Qrr (140 A, 175 °C) 7.55 µC - Critical for calculating turn-on losses of paired IGBTs and snubber sizing.
Rth(j-c) 0.21–0.27 K/W - Enables direct thermal interface to heatsink without thermal pad derating penalties.
Tvjmax 175 °C - Supports extended lifetime under sustained overload in heat pump PFC stages.

Pinout & Package

Package: PG-TO247-2-STD (standard 2-pin TO-247 variant with isolated case). Backside metallization serves as cathode terminal; anode is accessible via lead pin only.

Pin/Terminal Circuit Role Design Meaning
Pin 1 Cathode Primary cathode connection; electrically tied to backside metal for low-inductance layout in high-di/dt applications.
Backside Cathode Thermally and electrically active cathode surface-must be mounted to heatsink with conductive thermal interface material.
Pin 2 Anode Single-point anode termination; requires short, low-inductance PCB trace to minimize voltage spikes during recovery.

Key Features

Feature Design Value
Emitter Controlled 7 (EC7) Technology Enables precise carrier lifetime control for consistent softness and reduced Qrr variation over temperature.
Soft Recovery Characteristics Low Irrm/diF/dt ratio (<0.05) suppresses ringing and reduces snubber losses in IGBT half-bridges.
JEDEC Industrial Qualification Validated per JEDEC47/20/22 for 15-year field life in outdoor-rated solar inverters and EVSE enclosures.
Humidity Robust Design Passes 1000-hr 85 °C/85% RH bias test-ensures long-term reliability in tropical climate heat pump installations.
Pb-Free & RoHS Compliant Meets EU Directive 2011/65/EU and IPC-J-STD-020 moisture sensitivity level (MSL) 1 rating.

Applications

String Inverter EV Charging Station

Use Scenario: Frequent hard-switching in 3-phase NPC or T-type inverter legs handling 10–25 kW DC input.

IC Role / Device Role / Timing Role: Anti-parallel freewheeling diode for 1200 V Si IGBTs, managing reactive energy during PWM commutation.

Use Value: 245 ns trr at 175 °C ensures <1.2% increase in total switching loss vs. room temperature, maintaining system efficiency across ambient range.

Use Scenario: Bidirectional AC/DC conversion in liquid-cooled 22 kW AC chargers with active PFC and isolated DC/DC stage.

IC Role / Device Role / Timing Role: Output rectifier in phase-shifted full-bridge DC/DC converter operating at 100–200 kHz.

Use Value: 7.55 µC Qrr at 175 °C enables accurate prediction of IGBT turn-on loss and eliminates need for dynamic gate drive tuning.

Heat Pump Inverter Industrial Motor Drive

Use Scenario: High-voltage PFC front-end in variable-speed air-source heat pumps operating continuously at -25 to +45 °C ambient.

IC Role / Device Role / Timing Role: Boost diode in continuous conduction mode (CCM) PFC stage with 1000 V DC bus.

Use Value: 2.3 V VF at 175 °C reduces conduction loss by 18% versus standard fast diodes, improving seasonal COP by 0.15 points.

Use Scenario: Regenerative braking path in 400–690 V three-phase drives for HVAC compressors and conveyor systems.

IC Role / Device Role / Timing Role: Reverse-energy clamping diode in DC link, absorbing motor back-EMF during rapid deceleration.

Use Value: 462 A non-repetitive IFSM rating withstands 10-ms regen surges without degradation, supporting IP55-rated drive enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast soft-recovery diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
STTH160S12 Higher VF (2.9 V @ 140 A, 175 °C); trr = 270 ns; no JEDEC industrial qualification. Limited to commercial-grade UPS and lighting ballasts-not rated for outdoor solar or EVSE environments. Select when cost sensitivity outweighs thermal performance and long-term reliability requirements.
IXYS MDD150-12N1 Lower Qrr (5.2 µC @ 140 A, 175 °C) but higher VF (2.65 V); Rth(j-c) = 0.32 K/W; TO-247-3 package with isolated tab. Requires separate cathode isolation; less optimal for direct heatsink mounting in compact inverters. Prefer where lower Qrr dominates design priority and layout allows extra isolation clearance.

Compared with STTH160S12 and MDD150-12N1, IDWD140E120D7XKSA1 offers superior thermal resistance, JEDEC-validated lifetime, and tighter Qrr/VF trade-off-making it the preferred choice for mission-critical renewable energy and EV infrastructure designs.

Availability

IDWD140E120D7XKSA1 is available at Aetrix Electronics and suitable for string inverters, EV charging stations, and heat pump inverters requiring stable component supply with guaranteed long-term availability and full traceability.

Supply support for IDWD140E120D7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power electronics, automotive microcontrollers, and security ICs, with global manufacturing and R&D centers.

IDWD140E120D7XKSA1 belongs to Infineon's Emitter Controlled Diode (ECD) product line, engineered specifically for high-reliability, high-frequency power conversion in renewable energy and e-mobility infrastructure.

FAQ

What is the maximum recommended mounting torque for IDWD140E120D7XKSA1?

The datasheet specifies a maximum mounting torque of 0.6 Nm for M3 screws. Exceeding this value risks mechanical damage to the ceramic insulator or solder joint integrity, potentially compromising thermal resistance and long-term reliability under thermal cycling.

Does IDWD140E120D7XKSA1 require a thermal pad between the backside cathode and heatsink?

No thermal pad is required-the device is designed for direct metal-to-metal contact using thermally conductive grease or phase-change material. The backside cathode metallization is fully compatible with standard heatsink interface materials and meets IPC-7351B land pattern requirements.

Can IDWD140E120D7XKSA1 replace standard ultrafast diodes like UF3007 in existing designs?

Direct replacement is not recommended due to higher IF rating (140 A vs. 3 A), different package (PG-TO247-2 vs. DO-15), and significantly higher VRRM (1200 V vs. 1000 V). Layout, thermal, and gate-drive interactions must be re-validated for any substitution.

Is the internal emitter inductance (LE = 13 nH) measured from the case or from the pins?

LE = 13 nH is measured 5 mm from the case edge along the leads, per Table 1 in the datasheet. This value reflects parasitic inductance in the internal bond wire and lead frame-critical for modeling voltage overshoot during di/dt events above 1000 A/µs.

IDWD140E120D7XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-247-2
Packaging:
Tube
Product Status:
Active
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
207A
Voltage - Forward (Vf) (Max) @ If:
3 V @ 140 A
Speed:
Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr):
225 ns
Current - Reverse Leakage @ Vr:
20 µA @ 1200 V
Capacitance @ Vr, F:
-
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-2-2
Operating Temperature - Junction:
-40°C ~ 175°C

IDWD140E120D7XKSA1 FAQ

1.How can I place an order for IDWD140E120D7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDWD140E120D7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDWD140E120D7XKSA1 reliable?

The price and inventory of IDWD140E120D7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDWD140E120D7XKSA1 is usually 5 days.

3.What payment methods are accepted for IDWD140E120D7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDWD140E120D7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDWD140E120D7XKSA1?

IDWD140E120D7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDWD140E120D7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDWD140E120D7XKSA1?

For technical support, including IDWD140E120D7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDWD140E120D7XKSA1 requirements.

6.How does Aetrix verify that IDWD140E120D7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IDWD140E120D7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDWD140E120D7XKSA1 meets industry standards.

7.What is the process for return or replacement of IDWD140E120D7XKSA1?

All IDWD140E120D7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDWD140E120D7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDWD140E120D7XKSA1 part is unused and in its original packaging.

Return procedure for IDWD140E120D7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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